Publications

• Article dans une revue

Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy

T. Xu, J. Sulerzycki, J.P. Nys, G. Patriarche, B. Grandidier, D. Stievenard

We report the growth of Si and Ge nanowires (NWs) on a Si(111) surface by molecular beam epitaxy. While Si NWs grow perpendicular to the surface, two types of growth axes are found for the Ge NWs. Structural studies of both types of NWs performed with electron microscopies reveal a marked…

Nanoscale Research Letters, 2011, 6, pp.113-1-7. ⟨10.1186/1556-276X-6-113⟩. ⟨hal-00579084⟩

• Article dans une revue

Band offsets, wells, and barriers at nanoscale semiconductor heterojunctions

Y.M. Niquet, C. Delerue

Epitaxially grown semiconductor heterostructures make it possible to tailor the potential landscape for the carriers in a very controlled way. In planar lattice-matched heterostructures, the potential has indeed a very simple and easily predictable behavior: it is constant everywhere except at the…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84 (7), pp.075478. ⟨10.1103/PhysRevB.84.075478⟩. ⟨hal-00639883⟩

• Communication dans un congrès

Extraction des performances AC et bruit HF d'une technologie CMOS 45 nm en gamme mmW

L. Poulain, N. Waldhoff, D. Gloria, Francois Danneville, Gilles Dambrine

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 162, 6E3, 1-4. ⟨hal-00597146⟩

• Communication dans un congrès

Bias point optimization for low power/low noise applications of advanced SiGe HBT

N. Waldhoff, Francois Danneville, N. Rolland, P. Rolland, K. Aufinger

6th European Microwave Integrated Circuits Conference, EuMIC 2011, 2011, Manchester, United Kingdom. pp.386-389. ⟨hal-00799967⟩

• Article dans une revue

Coplanar liquid crystal reconfigurable phase-shifters

Fehim Sahbani, Nicolas Tentillier, Christian Legrand, Karine Blary, A. Gharsallah, A. Gharbi

A coplanar liquid crystal phase-shifter is presented and characterized in the frequency range of 5–40 GHz. The interest of this structure lies in the technological realization which is very simple. The phase-shift variation is of 0.2°/cm/GHz for an attenuation of 2.5 dB/cm at 40 GHz. These…

Molecular Crystals and Liquid Crystals, 2011, Issue 1: Proceedings of the 23rd International Liquid Crystal Conference (ILCC 2010) Part III of VIII Submit an article, 542, pp.204-212. ⟨10.1080/15421406.2011.570587⟩. ⟨hal-00795916⟩

• Article dans une revue

One port contour-mode ZnO piezoelectric MEMS resonator

Tadeusz Gryba, Julien Carlier, S.X. Wang, X.Z. Zhao, S. Guo, Jean-Etienne Lefebvre

This paper reports on design, fabrication and experimental testing of one port ZnO contour-mode resonant MEMS. The devices are fabricated from silicon wafers using a 4-mask process. The use of contour modes, whose frequencies are set by lithographically defined dimensions, permits the fabrication…

Microelectronic Engineering, 2011, 88, pp.3003-3010. ⟨10.1016/j.mee.2011.04.062⟩. ⟨hal-00639933⟩

• Communication dans un congrès

Fabrication et caractérisation de MOSFET In0.53Ga0.47As de type N en technologie auto-aligné et de longueur de grille de 300nm

J. Mo, A. Olivier, Nicolas Wichmann, Yannick Roelens, L. Desplanque, X. Wallart, Francois Danneville, Gilles Dambrine, F. Martin, O. Desplats, S. Bollaert

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 122, 2C3, 1-4. ⟨hal-00597145⟩

• Communication dans un congrès

Systèmes radiofréquences avancés pour communication inter-puces multi-gigabits à 60GHz

S. Foulon, Christophe Loyez, S. Pruvost, N. Rolland

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 274, 2E8, 1-3. ⟨hal-00597147⟩

• Chapitre d'ouvrage

Ingénierie des matériaux et des structures, mécanique des solides, acoustique

Djimédo Kondo, Piotr Breitkopf, Robert Charlier, Paul Cristini, Valerie Deplano, Bertrand Dubus, Joseph Gril, Thierry Le Mogne, Frédéric Lebon, Nathalie Maurel, Nicolas Moes, Laurent Orgéas, Vincent Pagneux, Etienne Patoor, Sylvie Pommier, Claire Prada, Edgar Rauch, Jean-Jacques Sinou, Frédéric Valès, Claude Verdier

Les disciplines représentées dans la section 09 sont à la fois des disciplines de savoir, et des disciplines de l’ingénierie. On les retrouve aussi bien dans les activités de génération de connaissances de base, que dans la démarche de mise en œuvre de ces connaissances dans des réalisations…

Rapport de conjoncture 2010 du Comité national de la recherche scientifique, CNRS Editions, pp.169-186, 2011, ISBN 978-2-271-07263-4. ⟨hal-00799637⟩

• Article dans une revue

Above 600 mS/mm transconductance with 2.3 A/mm drain current density AlN/GaN high electron mobility transistors grown on silicon

F Medjdoub, Malek Zegaoui, Nicolas Waldhoff, B. Grimbert, N. Rolland, Paul-Alain Rolland

AlN/GaN high-electron-mobility transistors (HEMTs) capped with an in-situ grown SiN have been successfully developed on 100mm Si substrates. A unique combination of maximum output current density exceeding 2A/mm and a record extrinsic transconductance above 600 mS/mm has been reached, which is well…

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4 (6), pp.064106-1-3. ⟨10.1143/APEX.4.064106⟩. ⟨hal-00603010⟩