Publications

• Article dans une revue

[Invited paper] InSb nanowire field-effect transistors and quantum-dot devices

H.A. Nilsson, M.T. Deng, P. Caroff, C. Thelander, L. Samuelson, L.E. Wernersson, H.Q. Xu

The authors present fabrication and electrical measurements of InSb nanowire field-effect transistors (FETs) and quantum dots. The devices are made on a SiO 2 -capped Si substrate from InSb segments of InAs/InSb heterostructured nanowires, which are grown by metalorganic vapor phase epitaxy. For…

IEEE Journal of Selected Topics in Quantum Electronics, 2011, 17 (4), pp.907-914. ⟨10.1109/JSTQE.2010.2090135⟩. ⟨hal-00639823⟩

• Article dans une revue

Conception of patch antenna at wide band

M. Iftissane, S. Bri, L. Zenkouar, A. Mamouni

International Journal of Emerging Sciences, 2011, 1, pp.400-417. ⟨hal-00639914⟩

• Communication dans un congrès

Nanocomposants AlGaN/GaN : application à la détection THz

P. Sangare, B. Grimbert, M. Faucher, Sylvie Lepilliet, Guillaume Ducournau, Christophe Gaquière

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. papier 305, 2C4, 1-4. ⟨hal-00603132⟩

• Ouvrages

Electromagnetic Reverberation Chambers

Philippe Besnier, Bernard Démoulin

Dedicated to a complete presentation on all aspects of reverberation chambers, this book provides the physical principles behind these test systems in a very progressive manner. The detailed panorama of parameters governing the operation of electromagnetic reverberation chambers details various…

ISTE/Wiley, pp.400, 2011, P.N.Favennec. ⟨hal-00640424⟩

• Article dans une revue

Spin-dependent photoelectron tunneling from GaAs into magnetic cobalt

D. Vu, H. Jurca, F. Maroun, P. Allongue, N. Tournerie, A. Rowe, D. Paget, S. Arscott, Emilien Peytavit

The spin dependence of the photoelectron tunnel current from free standing GaAs films into outof-plane magnetized Cobalt films is demonstrated. The measured spin asymmetry (A) resulting from a change in light helicity, reaches ±6% around zero applied tunnel bias and drops to ±2% at a bias of -1.6 V…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (12), pp.121304(R). ⟨10.1103/PhysRevB.83.121304⟩. ⟨hal-02345792⟩

• Article dans une revue

Asymmetry of polarization reversal and current-voltage characteristics of Pt/PZT-Film/Pt:Ti/SiO2/Si-substrate structures

S.L. Bravina, N.V. Morozovsky, J. Costecalde, Caroline Soyer, Denis Remiens, D. Deresmes

The characterization of the asymmetries of bipolar charge-voltage and current-voltage loops of polarization reversal and unipolar current-voltage curves for Pt/PZT-film/Pt:Ti/SiO2/Si-substrate systems was performed in the dynamic mode. The asymmetry of local deformation-voltage loops was observed…

Smart Materials Research, 2011, 2011, pp.374915. ⟨10.1155/2011/374915⟩. ⟨hal-00783492⟩

• Article dans une revue

Exploit the bandwidth capacities of the perfluorinated graded index polymer optical fiber for multi-services distribution

C. Lethien, Christophe Loyez, Jean-Pierre Vilcot, N. Rolland, P.A. Rolland

The study reported here deals with the exploitation of perfluorinated graded index polymer optical fiber bandwidth to add further services in a home/office network. The fiber properties are exhibited in order to check if perfluorinated graded index plastic optical fiber (PFGI-POF) is suitable to…

Polymers, 2011, 3 (3), pp.1006-1028. ⟨10.3390/polym3031006⟩. ⟨hal-00639804⟩

• Article dans une revue

Optimization of ohmic contact and adhesion on polysilicon in MEMS–NEMS wet etching process

Etienne Herth, Emmanuelle Algré, Bernard Legrand, Lionel Buchaillot

This paper presents the optimization of polysilicon doping and metallization to form ohmic contact with etching resistance. Indeed, polysilicon doped by ion implantation and ohmic contacts are an important and interesting part of integrated circuit technology or MEMS and NEMS. LPCVD-polysilicon…

Microelectronic Engineering, 2011, 88 (5), pp.724-728. ⟨10.1016/j.mee.2010.06.032⟩. ⟨hal-02300269⟩

• Article dans une revue

A metal-metal Fabry-Pérot cavity photoconductor for efficient GaAs terahertz photomixers

Emilien Peytavit, Christophe Coinon, Jean-Francois Lampin

Journal of Applied Physics, 2011, 109 (1), pp.016101. ⟨10.1063/1.3525709⟩. ⟨hal-00572645⟩

• Article dans une revue

Thickness effect on nanoscale electromechanical activity in Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films studied by piezoresponse force microscopy

A. Ferri, M. Detalle, J.F. Blach, M. Warenghem, Denis Remiens, R. Desfeux

0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN–PT) ferroelectric thin films with thickness ranging from 28 to 110 nm were sputter deposited onto LaNiO3/SiO2/Si substrates. Optical properties were determined by spectroscopic ellipsometry. We found B = 4.6 and λ0 = 209 nm, which is consistent for all PMN–PT…

Journal of Applied Physics, 2011, 110 (10), pp.104101. ⟨10.1063/1.3660526⟩. ⟨hal-00783533⟩