Publications
Affichage de 9061 à 9070 sur 16271
Ingénierie des matériaux et des structures, mécanique des solides, acoustique
Djimédo Kondo, Piotr Breitkopf, Robert Charlier, Paul Cristini, Valerie Deplano, Bertrand Dubus, Joseph Gril, Thierry Le Mogne, Frédéric Lebon, Nathalie Maurel, Nicolas Moes, Laurent Orgéas, Vincent Pagneux, Etienne Patoor, Sylvie Pommier, Claire Prada, Edgar Rauch, Jean-Jacques Sinou, Frédéric Valès, Claude Verdier
Rapport de conjoncture 2010 du Comité national de la recherche scientifique, CNRS Editions, pp.169-186, 2011, ISBN 978-2-271-07263-4. ⟨hal-00799637⟩
Band offsets, wells, and barriers at nanoscale semiconductor heterojunctions
Y.M. Niquet, C. Delerue
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84 (7), pp.075478. ⟨10.1103/PhysRevB.84.075478⟩. ⟨hal-00639883⟩
Accuracy of specular path estimates with ESPRIT and RiMAX in the presence of measurement-based diffuse multipath components
D.P. Gaillot, E. Tanghe, P. Stefanut, W. Joseph, M. Lienard, Pierre Degauque, L. Martens
5th European Conference on Antennas and Propagation, EuCAP 2011, 2011, Italy. pp.3619-3622. ⟨hal-00603111⟩
Design, realization, and test of a 2.1-GHz low-phase-noise oscillator based on BAW resonator
M.D. Li, S. Seok, N. Rolland, P.A. Rolland
Microwave and Optical Technology Letters, 2011, 53, pp.405-409. ⟨10.1002/mop.25690⟩. ⟨hal-00572638⟩
Magnonic circuits and crystals
Housni Al-Wahsh, Abdellatif Akjouj, Bahram Djafari-Rouhani, L. Dobrzynski
Surface Science Reports, 2011, 66, pp.29-75. ⟨10.1016/j.surfrep.2010.10.002⟩. ⟨hal-00572644⟩
A 45° silicon mirror for acoustic propagation parallel to the plane of the substrate
S. Wang, Julien Carlier, Pierre Campistron, Wei-Jiang Xu, Dorothée Debavelaere-Callens, Bertrand Nongaillard, Assane Ndieguene, X. Zhao
Journal of Physics: Conference Series, 2011, 269, pp.012009-1-10. ⟨10.1088/1742-6596/269/1/012009⟩. ⟨hal-00572671⟩
Fabrication et caractérisation de transistor à base de graphène nano ruban en vue d'application haute fréquence
Nan Meng
2011. ⟨hal-00574524⟩
Erbium silicide growth in the presence of residual oxygen
N. Reckinger, Xing Tang, S. Godey, Emmanuel Dubois, A. Laszcz, J. Ratajczak, Adriana Vlad, C.A. Dutu, J.P. Raskin
Journal of The Electrochemical Society, 2011, 158, pp.H715-H723. ⟨10.1149/1.3585777⟩. ⟨hal-00597075v2⟩
Characterization of AlGaN/GaN high electron mobility transistor grown on silicon carbide devices with a gate length Lg = 0.15 µm
M. Gassoumi, M.M. Ben Salem, S. Saadaoui, W. Chikhaoui, Christophe Gaquière, H. Maaref
Sensor letters, 2011, 9, pp.2178-2181. ⟨10.1166/sl.2011.1788⟩. ⟨hal-00795894⟩