Publications

• Article dans une revue

Poole-Frenkel assisted emissions from a barrier trap in AlGaN/GaN/Si HEMTs

H. Mosbahi, M. Gassoumi, H. Mejri, Christophe Gaquière, M.A. Zaidi, H. Maaref

Journal of Electron Devices, 2011, 11, pp.538-543. ⟨hal-00639919⟩

• Article dans une revue

One port contour-mode ZnO piezoelectric MEMS resonator

Tadeusz Gryba, Julien Carlier, S.X. Wang, X.Z. Zhao, S. Guo, Jean-Etienne Lefebvre

This paper reports on design, fabrication and experimental testing of one port ZnO contour-mode resonant MEMS. The devices are fabricated from silicon wafers using a 4-mask process. The use of contour modes, whose frequencies are set by lithographically defined dimensions, permits the fabrication…

Microelectronic Engineering, 2011, 88, pp.3003-3010. ⟨10.1016/j.mee.2011.04.062⟩. ⟨hal-00639933⟩

• Article dans une revue

Low-temperature-grown GaAs photoconductor with high dynamic responsivity in the millimeter wave range

Emilien Peytavit, Christophe Coinon, Jean-Francois Lampin

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4, pp.104101-1-3. ⟨10.1143/APEX.4.104101⟩. ⟨hal-00639827⟩

• Communication dans un congrès

Recent advances in the negative refraction of longitudinal waves in an elastic phononic crystal

Anne-Christine Hladky, Charles Croënne, K.R. Olympio, Jerome O. Vasseur, Bertrand Dubus, B. Morvan

IEEE International Ultrasonics Symposium, IUS 2011, 2011, Orlando, FL, United States. pp.1316-1319, ⟨10.1109/ULTSYM.2011.0325⟩. ⟨hal-00799671⟩

• Communication dans un congrès

Graphene nanoribbon field effect transistor for high frequency applications

H. Happy, N. Meng, R. Fleurier, E. Pichonat, D. Vignaud, Gilles Dambrine

41st European Microwave Conference, EuMC 2011, 2011, Manchester, United Kingdom. pp.1138-1141. ⟨hal-00799695⟩

• Communication dans un congrès

THz emission induced by sub-threshold instability optical excited in nanometer-length field-effect transistors

P. Nouvel, J. Torres, H. Marinchio, A. Penot, C. Palermo, L. Varani, P. Shiktorov, E. Starikov, V. Gruzinskis, F. Teppe, Yannick Roelens, A. Shchepetov, S. Bollaert

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00799965⟩

• Communication dans un congrès

Bias point optimization for low power/low noise applications of advanced SiGe HBT

N. Waldhoff, Francois Danneville, N. Rolland, P. Rolland, K. Aufinger

6th European Microwave Integrated Circuits Conference, EuMIC 2011, 2011, Manchester, United Kingdom. pp.386-389. ⟨hal-00799967⟩

• Chapitre d'ouvrage

Modélisation des systèmes biologiques, bioinformatique

Olivier Gascuel, P. Benas, C. Brun, D. Burnouf, Alexandre de Brevern, A. Denise, Nicolas Destainville, Bertrand Dubus, L. Duret, B. Genest, J. Ledoux, O. Martin, I. Mihalcescu, L. Nicolas, Benoît Perthame, Nadine Peyriéras, J. Salamero, F. Schoentgen, M.C. Slomianny

Rapport de conjoncture 2010 du Comité national de la recherche scientifique, CNRS Editions, chapitre 43, 845-858, 2011, 978-2-271-07263-4. ⟨hal-00799641⟩

• Autre publication scientifique

Étude ab initio des phonons du graphène sur substrats métalliques

Adrien Allard

2011. ⟨hal-00799436⟩

• Article dans une revue

Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayer thickness

Y. Wang, P. Ruterana, L. Desplanque, S. El Kazzi, X. Wallart

Using transmission electron microscopy we investigate the influence of AlSb monolayers and substrate surface preparation on the microstructure of GaSb grown on GaAs (001) by molecular beam epitaxy. The geometric phase analysis method is used to analyze the interface dislocation type and the…

Journal of Applied Physics, 2011, 109, pp.023509-1-6. ⟨10.1063/1.3532053⟩. ⟨hal-00572649⟩