Publications

• Autre publication scientifique

Fabrication de nanostructures en silicium pour le développement de surfaces superomniphobes et pour la désorption/ionisation assistée par laser de biomolécules en vue de leur analyse par spectrométrie de masse

Thi Phuong Nhung Nguyen

2011. ⟨hal-00799472⟩

• Communication dans un congrès

Deposition of crack-free 30 µm AlN on IDT/ZnO/Si for wave guiding layer acoustic wave applications

O. Legrani, O. Elmazria, P. Pigeat, A. Bartasyte, S. Zhgoon, Abdelkrim Talbi

IEEE International Ultrasonics Symposium, IUS 2011, 2011, Orlando, FL, United States. pp.2313-2316, ⟨10.1109/ULTSYM.2011.0574⟩. ⟨hal-00799998⟩

• Article dans une revue

Magnetoelectric memory using perpendicular magnetization states and magnetoelastic switching

Nicolas Tiercelin, Yannick Dusch, V.L. Preobrazhensky, Philippe Pernod

We present here a concept of a memory cell called MELRAM based on a magnetic element with giant magnetostriction, embedded in a piezoelectric matrix. Two equilibrium orientations of magnetization are defined by combining uniaxial anisotropy together with a magnetic polarization in the hard axis…

Journal of Applied Physics, 2011, 109 (7), pp.07D7267. ⟨10.1063/1.3559532⟩. ⟨hal-00591346⟩

• Article dans une revue

Thickness effect on nanoscale electromechanical activity in Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films studied by piezoresponse force microscopy

A. Ferri, M. Detalle, J.F. Blach, M. Warenghem, Denis Remiens, R. Desfeux

0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN–PT) ferroelectric thin films with thickness ranging from 28 to 110 nm were sputter deposited onto LaNiO3/SiO2/Si substrates. Optical properties were determined by spectroscopic ellipsometry. We found B = 4.6 and λ0 = 209 nm, which is consistent for all PMN–PT…

Journal of Applied Physics, 2011, 110 (10), pp.104101. ⟨10.1063/1.3660526⟩. ⟨hal-00783533⟩

• Communication dans un congrès

Nanofils et énergie : un domaine en forte expansion

Pere Roca I Cabarrocas, C. Lethien, Thierry Brousse, N. Guillet, A. Gruss, Agnès Bonvilain, G. Savelli, J. Stockholm, Luc Brohan, S. Perraud, T. Pauporte

Séminaire Annuel de l'Observatoire des Micro et Nanotechnologies, 2011, Paris, France. ⟨hal-00574515⟩

• Autre publication scientifique

BioMEMS pour l'analyse de cellules biologiques par spectroscopie d'impédance

Timothée Houssin

2011. ⟨hal-00574525⟩

• Article dans une revue

Materials chemistry for catalysis : coating of catalytic oxides on metallic foams

A. Essakhi, A. Löfberg, S. Paul, B. Mutel, P. Supiot, V. Le Courtois, P. Rodriguez, V. Meille, E. Bordes-Richard

Microporous and Mesoporous Materials, 2011, 140, pp.81-88. ⟨hal-00572663⟩

• Article dans une revue

Radiation pattern measurements of an integrated transverse electromagnetic horn antenna using a terahertz photomixing setup

L. Prissette, Guillaume Ducournau, Tahsin Akalin, Emilien Peytavit, Alexandre Beck, Mohammed Zaknoune, Damien Ducatteau, Jean-Francois Lampin

We report experimental radiation pattern measurements of a transverse electromagnetic horn antenna at the millimetric/sub-millimetric frontier (280–350 GHz). The antenna is fed by a monolithically integrated uni-travelling-carrier photodiode illuminated by an optical beatnote (photomixing) at 1.55…

IEEE Microwave and Wireless Components Letters, 2011, 21, pp.49-51. ⟨10.1109/LMWC.2010.2088383⟩. ⟨hal-00572643⟩

• Article dans une revue

Exploit the bandwidth capacities of the perfluorinated graded index polymer optical fiber for multi-services distribution

C. Lethien, Christophe Loyez, Jean-Pierre Vilcot, N. Rolland, P.A. Rolland

The study reported here deals with the exploitation of perfluorinated graded index polymer optical fiber bandwidth to add further services in a home/office network. The fiber properties are exhibited in order to check if perfluorinated graded index plastic optical fiber (PFGI-POF) is suitable to…

Polymers, 2011, 3 (3), pp.1006-1028. ⟨10.3390/polym3031006⟩. ⟨hal-00639804⟩

• Article dans une revue

Effects of AlGaN back barrier on AlN/GaN-on-silicon high-electron-mobility transistors

F Medjdoub, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

In this work, the effects of an AlGaN back barrier in the dc and RF performances of AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100 mm Si substrates have been investigated. It is shown that the outstanding dc performance in highly scaled AlN/GaN-on-Si HEMTs can be fully preserved…

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4 (12), pp.124101-1-3. ⟨10.1143/APEX.4.124101⟩. ⟨hal-00783378⟩