Publications

• Communication dans un congrès

Développement d'un banc de caractérisation non linéaire dans le domaine fréquentiel pour la caractérisation et la modélisation de transistors de puissance

R. Ouhachi, A. Pottrain, T. Lacave, D. Ducatteau, P. Chevalier, D. Gloria, Christophe Gaquière

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. papier 118, 2F6, 1-4. ⟨hal-00603134⟩

• Article dans une revue

Artificial magnetic properties of dielectric metamaterials in terms of effective circuit model

L.Y. Liu, J.B. Sun, X.J. Fu, J. Zhou, Q. Zhao, B. Fu, J.P. Liao, D. Lippens

Progress In Electromagnetics Research, 2011, 116, pp.159-170. ⟨10.2528/PIER11033004⟩. ⟨hal-00603007⟩

• Communication dans un congrès

Influence du retournement temporel sur la localisation au sein d'un réseau ad hoc

Michael Bocquet, Christophe Loyez, M. Friziel, N. Rolland

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. papier 51, 6F3, 1-4. ⟨hal-00603135⟩

• Communication dans un congrès

Amélioration des performances électriques en régime statique et hyperfréquence de transistors HEMTs pseudomorphiques de la filière GaAs en utilisant des rayonnements ionisants

F. Berthet, Y. Guhel, H. Galous, B. Boudart, J.L. Trolet, M. Piccione, N. Vellas, Christophe Gaquière

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. pp.6E9, 1-4. ⟨hal-00603138⟩

• Communication dans un congrès

Caractérisation et analyse des effets de pièges électriques sur la fiabilité de HEMTS AlGaN/GaN

F. Berthet, Y. Guhel, H. Galous, B. Boudart, J.L. Trolet, M. Piccione, V. Sbrugnera, B. Grimbert, Christophe Gaquière

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. pp.4C3, 1-4. ⟨hal-00603136⟩

• Communication dans un congrès

Dispersion of confined acoustic phonons in ultra-thin Si membranes

J. Cuffe, E. Chavez, P.O. Chapuis, E.H. El Boudouti, F. Alzina, D. Dudek, Yan Pennec, Bahram Djafari-Rouhani, A. Shchepetov, M. Prunnila, J. Ahopelto, C.M. Sotomayor Torres

The acoustic phonon dispersion curves of ~10 and ~30 nm Si membranes were measured using Brillouin Light Scattering (BLS) spectroscopy. The dispersion relations of the confined phonons were calculated from a semi-analytical model based on continuum elasticity theory. Green’s function simulations…

1st International Conference on Phononic Crystals, Metamaterials and Optomechanics, PHONONICS 2011, 2011, Santa Fe, United States. pp.218-219. ⟨hal-00800075⟩

• Article dans une revue

Contact angle hysteresis origins: investigation on super-omniphobic surfaces

Renaud Dufour, Maxime Harnois, Vincent Thomy, Rabah Boukherroub, Vincent Senez

Contact angle hysteresis of liquid droplets is investigated on sticky and flexible super-omniphobic surfaces made up of PDMS–Si3N4 microstructures. Up to now, extensive studies have been focusing on the relation between hysteresis and surface properties such as roughness or defect density. However…

Soft Matter, 2011, 7 (19), pp.9380-9387. ⟨10.1039/C1SM05832K⟩. ⟨hal-00639938⟩

• Article dans une revue

Opening of simultaneous photonic and phononic band gap in two-dimensional square lattice periodic structure

Driss Bria, B. Assouar, Mourad Oudich, Yan Pennec, Jerome O. Vasseur, Bahram Djafari-Rouhani

We discuss two points related to the simultaneous existence of phononic and photonic band gaps in a two-dimensional crystal constituted by a square array of holes drilled in a matrix. In a first part, using the case of a sapphire sample in the microwave range, we show that in addition to the…

Journal of Applied Physics, 2011, 109 (1), pp.014507. ⟨10.1063/1.3530682⟩. ⟨hal-00579068⟩

• Article dans une revue

High Gain and Fast Detection of Warfare Agents Using Back-Gated Silicon-Nanowired MOSFETs

Vikram Passi, Florent Ravaux, Emmanuel Dubois, Simon Clavaguera, Alexandre Carella, Caroline Celle, Jean-Pierre Simonato, Luca Silvestri, Susanna Reggiani, Dominique Vuillaume, Jean-Pierre Raskin

—The top-down fabrication of doped p-type silicon-nanowired (NW) arrays and their application as gas detectors is presented. After surface functionalization with 3-(4-ethynyl-benzyl)-1, 5, 7-trimethyl-3-azabicyclo [3.3.1] nonane-7-methanol molecules, the wires were subjected to an organophosphorous…

IEEE Electron Device Letters, 2011, 32, pp.1-3. ⟨10.1109/LED.2011.2146750⟩. ⟨cea-01344105⟩

• Communication dans un congrès

First AlN/GaN HEMTs power measurement at 18 GHz on silicon substrate

F Medjdoub, Malek Zegaoui, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

AlN/GaN heterostructure is an ideal candidate to push the limits of microwave GaN-based devices owing to the maximum theoretical spontaneous and piezoelectric difference between the epitaxial AlN barrier and the underlying GaN layer. If the tricky growth conditions of this binary can be controlled…

69th Device Research Conference, DRC 2011, Jun 2011, Santa Barbara, CA, United States. pp.219-220, ⟨10.1109/DRC.2011.5994506⟩. ⟨hal-00799973⟩