Publications

• Communication dans un congrès

Modélisation aérodynamique d'un nano-drone à ailes vibrantes

T. Vanneste

9èmes Journées des Doctorants MFE/Nord (DAAP/DAFE/DEFA/DSNA), 2011, Châtillon, France. ⟨hal-00591399⟩

• Communication dans un congrès

Size and shape effects on the melting properties of catalytic nanoparticles

G. Guisbiers, G. Abudukelimu, D. Hourlier

Thematic Days on Nanowires and Applications, GDR 2974, 2011, Villeneuve d'Ascq, France. ⟨hal-00591401⟩

• Communication dans un congrès

Transport in quantum dots made from InAs nanowires

A. Ghaddar, P. Caroff, David Troadec, X. Wallart, D. Stiévenard, R. Leturcq

Thematic Days on Nanowires and Applications, GDR 2974, 2011, Villeneuve d'Ascq, France. ⟨hal-00591403⟩

• Article dans une revue

IEMN/LEMAC magneto-mechanical microjets and micro-hotwires and aerodynamic active flow control

Philippe Pernod, A. Merlen, Abdelkrim Talbi, Vladimir Preobrazhensky, R. Viard, L. Gimeno, O. Ducloux

International Journal of Aerodynamics, 2011, 1, pp.243-261. ⟨10.1504/IJAD.2011.038844⟩. ⟨hal-00591322⟩

• Article dans une revue

Golden ratio-based and tapered diptera inspired wings : their design and fabrication using standard MEMS technology

X.Q. Bao, Eric Cattan

Journal of Bionic Engineering, 2011, 8, pp.174-180. ⟨10.1016/S1672-6529(11)60023-1⟩. ⟨hal-00603032⟩

• Communication dans un congrès

Nanocomposants AlGaN/GaN : application à la détection THz

P. Sangare, B. Grimbert, M. Faucher, Sylvie Lepilliet, Guillaume Ducournau, Christophe Gaquière

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. papier 305, 2C4, 1-4. ⟨hal-00603132⟩

• Article dans une revue

Optimization of ohmic contact and adhesion on polysilicon in MEMS–NEMS wet etching process

Etienne Herth, Emmanuelle Algré, Bernard Legrand, Lionel Buchaillot

This paper presents the optimization of polysilicon doping and metallization to form ohmic contact with etching resistance. Indeed, polysilicon doped by ion implantation and ohmic contacts are an important and interesting part of integrated circuit technology or MEMS and NEMS. LPCVD-polysilicon…

Microelectronic Engineering, 2011, 88 (5), pp.724-728. ⟨10.1016/j.mee.2010.06.032⟩. ⟨hal-02300269⟩

• Article dans une revue

[Invited paper] InSb nanowire field-effect transistors and quantum-dot devices

H.A. Nilsson, M.T. Deng, P. Caroff, C. Thelander, L. Samuelson, L.E. Wernersson, H.Q. Xu

The authors present fabrication and electrical measurements of InSb nanowire field-effect transistors (FETs) and quantum dots. The devices are made on a SiO 2 -capped Si substrate from InSb segments of InAs/InSb heterostructured nanowires, which are grown by metalorganic vapor phase epitaxy. For…

IEEE Journal of Selected Topics in Quantum Electronics, 2011, 17 (4), pp.907-914. ⟨10.1109/JSTQE.2010.2090135⟩. ⟨hal-00639823⟩

• Article dans une revue

Variations in the work function of doped single- and few-layer graphene assessed by Kelvin probe force microscopy and density functional theory

D. Ziegler, P. Gava, J. Güttinger, F. Molitor, L. Wirtz, M. Lazzeri, A.M. Saitta, A. Stemmer, Francesco Mauri, C. Stampfer

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.235434-1-7. ⟨10.1103/PhysRevB.83.235434⟩. ⟨hal-00639882⟩

• Article dans une revue

Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode

M. Gassoumi, S. Saadaoui, M.M. Ben Salem, Christophe Gaquière, H. Maaref

European Physical Journal: Applied Physics, 2011, 55, pp.30101-1-4. ⟨10.1051/epjap/2011110136⟩. ⟨hal-00639884⟩