Publications

Affichage de 9181 à 9190 sur 16098


  • Communication dans un congrès

[Invited] Carbon materials : new trends for future electronic ?

H. Happy, L. Nougaret, Vincent Derycke, E. Pichonat, R. Fleurier, D. Vignaud, Gilles Dambrine

5ème Colloque du GDR SOC-SIP, 2011, Lyon, France. ⟨hal-00807124⟩

  • Communication dans un congrès

Growth by MBE and characterization of antimonide III-V nanowires

P. Caroff, C. Thelander, S.R. Plissard, X. Wallart, K.A. Dick

473rd Wilhelm and Else Heraeus Seminar, III-V Nanowires - Growth, Properties, and Applications, 2011, Bad Honnef, Germany. ⟨hal-00807160⟩

  • Communication dans un congrès

THz metamaterials by stacked subwavelength hole arrays

S.X. Wang, F. Garet, Eric Lheurette, J.L. Coutaz, D. Lippens

30th Progress in Electromagnetics Research Symposium, PIERS 2011, 2011, Suzhou, China. ⟨hal-00807132⟩

  • Communication dans un congrès

Lentille métamatériau à gradient d'indice aux longueurs d'ondes des télécommunications

S.X. Wang, L. Kang, Ludovic Burgnies, D. Lippens

Colloque National Métamatériaux, CNM 2011, 2011, Orsay, France. ⟨hal-00807140⟩

  • Article dans une revue

150-GHz RF SOI-CMOS technology in ultrathin regime on organic substrate

A. Lecavelier Des Etangs-Levallois, Emmanuel Dubois, Marie Lesecq, Francois Danneville, L. Poulain, Y. Tagro, Sylvie Lepilliet, D. Gloria, C. Raynaud, David Troadec

This letter provides an experimental demonstration of high-performance industrial MOSFETs thinned down to 5.7 μm and transferred onto a 125- μm -thick polyethylene naphthalate foil. The die stack transferred onto the organic substrate comprises the 200-nm-thick active layer and the 5.5- μm -thick…

IEEE Electron Device Letters, 2011, 32 (11), pp.1510-1512. ⟨10.1109/LED.2011.2166241⟩. ⟨hal-00639864⟩

  • Article dans une revue

Regrowth of oxide-embedded amorphous silicon studied with molecular dynamics

E. Lampin, Christophe Krzeminski

Journal of Applied Physics, 2011, 109, pp.123509-1-5. ⟨10.1063/1.3596815⟩. ⟨hal-00603127⟩