Publications

• Communication dans un congrès

Squeezing radiation from quantum cascade lasers with leaky waves

Miguel Beruete, Tahsin Akalin, Miguel Navarro-Cia, Guillaume Ducournau, Jean-Francois Lampin, Mario Sorolla

Several flat antennas consisting of a central slot surrounded by a metallic periodic structure are proposed to enhance the radiation of quantum cascade laser terahertz sources. A simulation study of the optimal profile for high gain and radiation efficiency is done. Prototypes are being fabricated

36th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2011, Oct 2011, Houston, TX, United States. paper Tu3D.1, 1-2, ⟨10.1109/irmmw-THz.2011.6105066⟩. ⟨hal-00800485⟩

• Article dans une revue

A silicon nanowire ion-sensitive field-effect-transistor with elementary charge sensitivity

N. Clement, K. Nishiguchi, Jean-François Dufrêche, David Guérin, A. Fujiwara, D. Vuillaume

We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nanoscale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-noise level is lower than elementary charge. Our measurements also show that ionic strength of the surrounding electrolyte…

Applied Physics Letters, 2011, 98, pp.014104-3. ⟨10.1063/1.3535958⟩. ⟨hal-00572646⟩

• Communication dans un congrès

Millimeter-wave field-effect transistors produced using high-purity semiconducting single-walled carbon nanotubes

H. Happy, L. Nougaret, Vincent Derycke, Gilles Dambrine

IEEE MTT-S International Microwave Symposium, IMS 2011, 2011, Baltimore, MD, United States. pp.1-4, ⟨10.1109/MWSYM.2011.5972794⟩. ⟨hal-00799792⟩

• Communication dans un congrès

A sensor network based on RFID inventory for retail application

C. Anssens, N. Rolland, P.A. Rolland

IEEE International Conference on RFID-Technologies and Applications, RFID-TA 2011, 2011, Sitges, Spain. pp.64-67, ⟨10.1109/RFID-TA.2011.6068617⟩. ⟨hal-00799981⟩

• Communication dans un congrès

RF characterization of epitaxial graphene nano-ribbon field effect tansistors

N. Meng, J. Ferrer-Fernandez, O. Lancry, E. Pichonat, D. Vignaud, Gilles Dambrine, H. Happy

IEEE MTT-S International Microwave Symposium, IMS 2011, 2011, Baltimore, MD, United States. 1-3, selected as finalist of best student paper competition, ⟨10.1109/MWSYM.2011.5972627⟩. ⟨hal-00799963⟩

• Article dans une revue

Influence of a localized defect on acoustic field correlation in a reverberant medium

Najib Abou Leyla, Emmanuel Moulin, Jamal Assaad

Journal of Applied Physics, 2011, 110, pp.084906-1-8. ⟨10.1063/1.3652907⟩. ⟨hal-00639940⟩

• Article dans une revue

TEM studies of PtSi low Schottky-barrier contacts for source/drain in MOS transistors

A. Laszcz, J. Ratajczak, A. Czerwinski, J. Katcki, N. Breil, G. Larrieu, Emmanuel Dubois

Transmission electron microscopy methods were used to determine the impact of two different implantation processes on the morphology of platinum silicide layers constituting low Schottky barrier contacts intended as the source/drain in MOS transistors. These processes are very promising candidates…

Central European Journal of Physics, 2011, 9, pp.423-427. ⟨10.2478/s11534-010-0135-4⟩. ⟨hal-00574499⟩

• Article dans une revue

Initial stages of graphitization on SiC(000-1), as studied by phase atomic force microscopy

F.J. Ferrer, E. Moreau, D. Vignaud, D. Deresmes, S. Godey, X. Wallart

The initial stages of graphitization on 4H- and 6H-SiC (000-1) under ultrahigh vacuum at temperatures of 1125–1175°C have been studied by atomic force microscopy (AFM), X-ray photoemission spectroscopy and reflected high energy electron diffraction. A progressive coverage of the surface by graphene…

Journal of Applied Physics, 2011, 109 (5), pp.054307-1-6. ⟨10.1063/1.3560896⟩. ⟨hal-00577059⟩

• Autre publication scientifique

Contribution au développement de microcomposants pour la caractérisation ultrasonore en canal microfluidique sur silicium : modélisation de la propagation

Assane Ndieguene

2011. ⟨hal-00799474⟩

• Communication dans un congrès

50nm multi-gate In0.53Ga0.47As MOSFET with Ft of 150GHz

J.J. Mo, Nicolas Wichmann, Yannick Roelens, M. Zaknoune, L. Desplanque, X. Wallart, S. Bollaert

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00799699⟩