Publications

• Article dans une revue

Shielded cable transfer impedance measurements in the microwave range of 1 GHz to 10 GHz

B. Demoulin, L. Kone

IEEE Electromagnetic Compatibility Society Newsletter, 2011, 229, pp.52-61. ⟨hal-00639920⟩

• Article dans une revue

10GbE and radio over fiber dual transmission through polymer optical fiber

C. Lethien, Christophe Loyez, Jean-Pierre Vilcot, N. Rolland, P.A. Rolland

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4, pp.112502-1-3. ⟨10.1143/APEX.4.112502⟩. ⟨hal-00639809⟩

• Article dans une revue

Phase-controlling phononic crystals : realization of acoustic boolean logic gates

S. Bringuier, N. Swinteck, Jerome O. Vasseur, J.F. Robillard, K. Runge, K. Muralidharan, P.A. Deymier

Journal of the Acoustical Society of America, 2011, 130, pp.1919-1925. ⟨10.1121/1.3631627⟩. ⟨hal-00639811⟩

• Communication dans un congrès

Broadband waveguide-to-microstrip transition in W band

Fabio Pavanello, Ibrahim Türer, Tahsin Akalin, Simon Vandenbrouck, Emilien Peytavit, Jean-Francois Lampin

A novel transition has been conceived from microstrip (MS) to rectangular metallic waveguide (WG) with good matching over a broad band. Electromagnetic (EM) simulations confirm these properties and the actual fabrication has been shown feasible. S-Parameters measurements are underway.

36th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2011, Oct 2011, Houston, TX, United States. paper M2D.5, 1-2, ⟨10.1109/irmmw-THz.2011.6104801⟩. ⟨hal-00800483⟩

• Communication dans un congrès

TaOx/SiO2 insulating acoustic mirrors for AlN-based X-band BAW resonators

J. Capilla, J. Olivares, M. Clement, J. Sangrador, E. Iborra, V. Felmetsger, Arnaud Devos

IEEE International Ultrasonics Symposium, IUS 2011, 2011, Orlando, FL, United States. pp.1704-1707, ⟨10.1109/ULTSYM.2011.0425⟩. ⟨hal-00800103⟩

• Article dans une revue

New chemically functionalized nanomaterials for electrical nerve agents sensors

Jean-Pierre Simonato, Simon Clavaguera, Alexandre Carella, Michael Delalande, Nicolas Raoul, Stephane Lenfant, Dominique Vuillaume, Emmanuel Dubois

A chemical receptor specific to traces of organophosphorus nerve agents (OPs) has been synthesized and grafted to carbon nanotubes and silicon nanowires in order to make electrical sensors. Our results show that it is possible to detect efficiently sub-ppm traces of OPs with excellent selectivity…

Journal of Physics: Conference Series, 2011, 307, pp.012008-1-5. ⟨10.1088/1742-6596/307/1/012008⟩. ⟨hal-00795903⟩

• Article dans une revue

Effects of crystal phase mixing on the electrical properties of InAs nanowires

C. Thelander, P. Caroff, S.R. Plissard, A.W. Dey, K.A. Dick

Nano Letters, 2011, 11, pp.2424-2429. ⟨10.1021/nl2008339⟩. ⟨hal-00603006⟩

• Article dans une revue

Parameter space mapping of InAs nanowire crystal structure

Kimberly A. Dick, Jessica Bolinsson, Maria E. Messing, Sebastian Lehmann, Jonas Johansson, Philippe Caroff

Crystal structure and defects have been shown to have a strong impact on III-V nanowire properties. Recently, it was demonstrated that the issue of random stacking and polytypism in semiconductor nanowires can often be controlled using accessible growth parameters (such as temperature, diameter,…

Journal of Vacuum Science and Technology, 2011, 29 (4), pp.04D103-1-9. ⟨10.1116/1.3593457⟩. ⟨hal-00603098⟩

• Communication dans un congrès

Near-field scanning microscopy in liquid media based on microwave interferometry

Kamel Haddadi, D. Glay, T. Lasri

9th International Conference on Electromagnetic Wave Interaction with Water and Moist Substances, ISEMA 2011, 2011, United States. pp.185-192. ⟨hal-00603113⟩

• Article dans une revue

High-performance low-leakage-current AlN/GaN HEMTs grown on silicon substrate

F Medjdoub, Malek Zegaoui, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this letter, ultrathin-barrier AlN/GaN high-electron mobility transistors (HEMTs) capped with in situ metal-organic-chemical-vapor-deposition- grown SiN have been successfully fabricated on 100-mm Si substrates. Output current density exceeding 2 A/mm has been reached, which represents, to the…

IEEE Electron Device Letters, 2011, 32 (7), pp.874-876. ⟨10.1109/LED.2011.2138674⟩. ⟨hal-00639802⟩