Publications

• Article dans une revue

Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors

H.A. Nilsson, P. Caroff, E. Lind, M.E. Pistol, C. Thelander, L.E. Wernersson

Journal of Applied Physics, 2011, 110, pp.064510-1-4. ⟨10.1063/1.3633742⟩. ⟨hal-00639829⟩

• Article dans une revue

Room temperature magnetoelectric memory cell using stress-mediated magnetoelastic switching in nanostructured multilayers

Nicolas Tiercelin, Yannick Dusch, A. Klimov, S. Giordano, Vladimir Preobrazhensky, Philippe Pernod

Applied Physics Letters, 2011, 99, pp.192507-1-3. ⟨10.1063/1.3660259⟩. ⟨hal-00639833⟩

• Communication dans un congrès

Dispersion of confined acoustic phonons in ultra-thin Si membranes

J. Cuffe, E. Chavez, P.O. Chapuis, E.H. El Boudouti, F. Alzina, D. Dudek, Yan Pennec, Bahram Djafari-Rouhani, A. Shchepetov, M. Prunnila, J. Ahopelto, C.M. Sotomayor Torres

The acoustic phonon dispersion curves of ~10 and ~30 nm Si membranes were measured using Brillouin Light Scattering (BLS) spectroscopy. The dispersion relations of the confined phonons were calculated from a semi-analytical model based on continuum elasticity theory. Green’s function simulations…

1st International Conference on Phononic Crystals, Metamaterials and Optomechanics, PHONONICS 2011, 2011, Santa Fe, United States. pp.218-219. ⟨hal-00800075⟩

• Article dans une revue

Phase-controlling phononic crystal

N. Swinteck, J.F. Robillard, S. Bringuier, J. Bucay, K. Muralidharan, Jerome O. Vasseur, K. Runge, P.A. Deymier

Applied Physics Letters, 2011, 98, pp.103508-1-3. ⟨10.1063/1.3559599⟩. ⟨hal-00591321⟩

• Article dans une revue

Microwave evaluation of Pb(0.4)Sr(0.6)TiO(3) thin films prepared by magnetron sputtering on silicon : performance comparison with Ba(0.3)Sr(0.7)TiO(3) thin films

Freddy Ponchel, X. Lei, Denis Remiens, Gang Wang, X. Dong

Applied Physics Letters, 2011, 99, pp.172905-1-3. ⟨10.1063/1.3656065⟩. ⟨hal-00783535⟩

• Article dans une revue

Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy

A. Stolz, E. Cho, El Hadj Dogheche, Yidir Androussi, David Troadec, Dimitris Pavlidis, Didier Decoster

The waveguideproperties are reported for wide bandgap gallium nitride(GaN) structures grown by metal organic vapor phase epitaxy on sapphire using a AlN/GaN short period-superlattice (SPS) buffer layer system. A detailed optical characterization of GaN structures has been performed using the prism…

Applied Physics Letters, 2011, 98, pp.161903-1-3. ⟨10.1063/1.3582055⟩. ⟨hal-00591332⟩

• Article dans une revue

InAlN/GaN HEMTs on sapphire substrate with 2.9-W/mm output power density at 18 GHz

F. Lecourt, N. Ketteniss, H. Behmenburg, N. Defrance, Virginie Hoel, M. Eickelkamp, A. Vescan, C. Giesen, M. Heuken, Jean-Claude de Jaeger

IEEE Electron Device Letters, 2011, 32, pp.1537-1539. ⟨10.1109/LED.2011.2166949⟩. ⟨hal-00639917⟩

• Article dans une revue

10GbE and radio over fiber dual transmission through polymer optical fiber

C. Lethien, Christophe Loyez, Jean-Pierre Vilcot, N. Rolland, P.A. Rolland

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4, pp.112502-1-3. ⟨10.1143/APEX.4.112502⟩. ⟨hal-00639809⟩

• Article dans une revue

High-performance low-leakage-current AlN/GaN HEMTs grown on silicon substrate

F Medjdoub, Malek Zegaoui, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this letter, ultrathin-barrier AlN/GaN high-electron mobility transistors (HEMTs) capped with in situ metal-organic-chemical-vapor-deposition- grown SiN have been successfully fabricated on 100-mm Si substrates. Output current density exceeding 2 A/mm has been reached, which represents, to the…

IEEE Electron Device Letters, 2011, 32 (7), pp.874-876. ⟨10.1109/LED.2011.2138674⟩. ⟨hal-00639802⟩

• Communication dans un congrès

Near-field scanning microscopy in liquid media based on microwave interferometry

Kamel Haddadi, D. Glay, T. Lasri

9th International Conference on Electromagnetic Wave Interaction with Water and Moist Substances, ISEMA 2011, 2011, United States. pp.185-192. ⟨hal-00603113⟩