Publications

• Article dans une revue

Dielectric properties at microwaves frequencies of (Ni, Ti, La, Mg)-doped Ba0.3Sr0.7TiO3 thin films deposited on high-resistivity silicon substrates

Freddy Ponchel, Denis Remiens, J. Midy, Jean-François Legier, Caroline Soyer, T. Lasri, G. Guegan

Journal of the American Ceramic Society, 2011, 94, pp.1661-1663. ⟨10.1111/j.1551-2916.2011.04546.x⟩. ⟨hal-00603030⟩

• Article dans une revue

Above 600 mS/mm transconductance with 2.3 A/mm drain current density AlN/GaN high electron mobility transistors grown on silicon

F Medjdoub, Malek Zegaoui, Nicolas Waldhoff, B. Grimbert, N. Rolland, Paul-Alain Rolland

AlN/GaN high-electron-mobility transistors (HEMTs) capped with an in-situ grown SiN have been successfully developed on 100mm Si substrates. A unique combination of maximum output current density exceeding 2A/mm and a record extrinsic transconductance above 600 mS/mm has been reached, which is well…

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4 (6), pp.064106-1-3. ⟨10.1143/APEX.4.064106⟩. ⟨hal-00603010⟩

• Chapitre d'ouvrage

Ingénierie des matériaux et des structures, mécanique des solides, acoustique

Djimédo Kondo, Piotr Breitkopf, Robert Charlier, Paul Cristini, Valerie Deplano, Bertrand Dubus, Joseph Gril, Thierry Le Mogne, Frédéric Lebon, Nathalie Maurel, Nicolas Moes, Laurent Orgéas, Vincent Pagneux, Etienne Patoor, Sylvie Pommier, Claire Prada, Edgar Rauch, Jean-Jacques Sinou, Frédéric Valès, Claude Verdier

Les disciplines représentées dans la section 09 sont à la fois des disciplines de savoir, et des disciplines de l’ingénierie. On les retrouve aussi bien dans les activités de génération de connaissances de base, que dans la démarche de mise en œuvre de ces connaissances dans des réalisations…

Rapport de conjoncture 2010 du Comité national de la recherche scientifique, CNRS Editions, pp.169-186, 2011, ISBN 978-2-271-07263-4. ⟨hal-00799637⟩

• Article dans une revue

From rejection to transmission with stacked arrays of split ring resonators

Jorge Carbonell, Eric Lheurette, Didier Lippens

We report on free space transmission experiments carried out on stacked split ring resonator (SRRs) arrays operating at microwave frequencies. We start from the case of a single frequency selective surface which exhibits a rejection at the SRR resonance frequency. By stacking SRR arrays in the…

Progress In Electromagnetics Research, 2011, 112, pp.215-224. ⟨10.2528/PIER10121402⟩. ⟨hal-00572634⟩

• Article dans une revue

Specific absorption rate (SAR) distribution in the human head at global system mobil (GSM) frequencies

S. Bri, S. Kassimi, M. Habibi, A. Mamouni

European Journal of Scientific Research, 2011, 49, pp.590-600. ⟨hal-00572657⟩

• Article dans une revue

Negative refraction of longitudinal waves in a two-dimensional solid-solid phononic crystal

Charles Croënne, E.D. Manga, B. Morvan, A. Tinel, Bertrand Dubus, Jerome O. Vasseur, Anne-Christine Hladky

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.054301-1-5. ⟨10.1103/PhysRevB.83.054301⟩. ⟨hal-00572641⟩

• Article dans une revue

UWB multiple access communication system

F. Elbahhar, Atika Rivenq, Jean-Michel Rouvaen, M. Heddebaut

Wireless Personal Communications, 2011, 56, pp.333-352. ⟨10.1007/s11277-009-9835-8⟩. ⟨hal-00572654⟩

• Communication dans un congrès

Anisotropic transport of InAs/AlSb heterostructures grown on InP substrates

G. Moschetti, H. Zhao, P.A. Nilsson, S. Wang, A. Kalabukhov, Gilles Dambrine, S. Bollaert, L. Desplanque, X. Wallart, J. Grahn

35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011, 2011, Catania, Italy. pp.17-18. ⟨hal-00799700⟩

• Chapitre d'ouvrage

Low frequency acoustic devices for viscoelastic complex media characterization

Georges Nassar

Beghi M.G. Acoustic waves - From microdevices to helioseismology, InTech, Chapter 10, 213-238, 2011, ISBN 978-953-307-572-3. ⟨hal-00799656⟩

• Communication dans un congrès

First AlN/GaN HEMTs power measurement at 18 GHz on silicon substrate

F Medjdoub, Malek Zegaoui, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

AlN/GaN heterostructure is an ideal candidate to push the limits of microwave GaN-based devices owing to the maximum theoretical spontaneous and piezoelectric difference between the epitaxial AlN barrier and the underlying GaN layer. If the tricky growth conditions of this binary can be controlled…

69th Device Research Conference, DRC 2011, Jun 2011, Santa Barbara, CA, United States. pp.219-220, ⟨10.1109/DRC.2011.5994506⟩. ⟨hal-00799973⟩