Publications

• Chapitre d'ouvrage

Confined and guided vapor-liquid-solid catalytic growth of silicon nanoribbons : from nanowires to structured silicon-on-insulator layers

Aurélie Lecestre, Emmanuel Dubois, A. Villaret, T. Skotnicki, P. Coronel, G. Patriarche, C. Maurice

Nazarov A., Colinge J.P., Balestra F., Raskin J.P., Gamiz F., Lysenko V.S. Semiconductor-on-insulator materials for nanoelectronics applications, Springer Berlin Heidelberg, pp.Part 1, 67-89, 2011, Collection : Chemistry and materials science, Series : Engineering materials, ⟨10.1007/978-3-642-15868-1_4⟩. ⟨hal-00591734⟩

• Article dans une revue

Microscopic modeling of RF noise in laterally asymmetric channel MOSFETs

R. Rengel, M.J. Martin, Francois Danneville

IEEE Electron Device Letters, 2011, 32, pp.72-74. ⟨10.1109/LED.2010.2082488⟩. ⟨hal-00572639⟩

• Article dans une revue

Controlling the transmission of ultrahigh frequency bulk acoustic waves in silicon by 45° mirrors

S. Wang, J. Gao, Julien Carlier, Pierre Campistron, Assane Ndieguene, S. Guo, Olivier Bou Matar, Dorothée Debavelaere-Callens, Bertrand Nongaillard

In this paper, we present a feasible microsystem in which the direction of localized ultrahigh frequency (∼1 GHz) bulk acoustic wave can be controlled in a silicon wafer. Deep etching technology on the silicon wafer makes it possible to achieve high aspect ratio etching patterns which can be used…

Ultrasonics, 2011, 51, pp.532-538. ⟨10.1016/j.ultras.2011.01.003⟩. ⟨hal-00574498⟩

• Communication dans un congrès

Phase-control in phononic crystals

N. Swinteck, S. Bringuier, J.F. Robillard, Jerome O. Vasseur, Anne-Christine Hladky, P. Deymier

10th Anglo-French Physical Acoustics Conference, AFPAC'11, 2011, Fréjus, France. ⟨hal-00574514⟩

• Article dans une revue

150-GHz RF SOI-CMOS technology in ultrathin regime on organic substrate

A. Lecavelier Des Etangs-Levallois, Emmanuel Dubois, Marie Lesecq, Francois Danneville, L. Poulain, Y. Tagro, Sylvie Lepilliet, D. Gloria, C. Raynaud, David Troadec

This letter provides an experimental demonstration of high-performance industrial MOSFETs thinned down to 5.7 μm and transferred onto a 125- μm -thick polyethylene naphthalate foil. The die stack transferred onto the organic substrate comprises the 200-nm-thick active layer and the 5.5- μm -thick…

IEEE Electron Device Letters, 2011, 32 (11), pp.1510-1512. ⟨10.1109/LED.2011.2166241⟩. ⟨hal-00639864⟩

• Article dans une revue

Simulation of chemical vapor infiltration and deposition based on 3D images : a local scale approach

W. Ros, G.L. Vignoles, C. Germain, P. Supiot, G. Kokkoris

A numerical solution for the simulation of chemical vapor infiltration (CVI) of ceramic matrix composites is presented. This computational model requires a 3D representation of the preform. Gas transport and chemical reaction are simulated by a Monte Carlo random walk technique. The developed…

Chemical Vapor Deposition, 2011, 17, pp.312-320. ⟨10.1002/cvde.201106895⟩. ⟨hal-00783489⟩

• Article dans une revue

Electrically controllable fishnet metamaterial based on nematic liquid crystal

F. Zhang, W. Zhang, Q. Zhao, J. Sun, K. Qiu, J. Zhou, D. Lippens

Optics Express, 2011, 19, pp.1563-1568. ⟨10.1364/OE.19.001563⟩. ⟨hal-00572635⟩

• Article dans une revue

Numerical analysis of enhanced transmission through a single subwavelength aperture based on MIE resonance single particle

L. Kang, Véronique Sadaune, D. Lippens

We numerically demonstrate that the transmission through a deep subwavelength (lambda(0)/20) aperture in a metal plate could be greatly enhanced owing to the resonance effects of a high permittivity (k) dielectric cube tightly coupled to the aperture. The transmission enhancement originates from…

Progress In Electromagnetics Research, 2011, 113, pp.211-226. ⟨10.2528/PIER10122705⟩. ⟨hal-00572637⟩

• Article dans une revue

The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT's on SiC substrates

M. Gassoumi, M.M. Ben Salem, S. Saadaoui, B. Grimbert, Julien Fontaine, Christophe Gaquière, H. Maaref

Microelectronic Engineering, 2011, 88, pp.370-372. ⟨10.1016/j.mee.2010.09.027⟩. ⟨hal-00572669⟩

• Article dans une revue

AlN/GaN heterostructures grown by metal organic vapour phase epitaxy with in situ Si3N4 passivation

K. Cheng, S. Degroote, M. Leys, F Medjdoub, J. Derluyn, B. Sijmus, Marie Germain, G. Borghs

Journal of Crystal Growth, 2011, 315, pp.204-207. ⟨10.1016/j.jcrysgro.2010.09.025⟩. ⟨hal-00572672⟩