Publications

• Communication dans un congrès

Fonctionnement de la photodiode à transport unipolaire et transition large bande guide d'onde-microruban dans la bande W

F. Pavanello

14èmes Journées Nationales du Réseau Doctoral de Micro et Nanoélectronique, JNRDM 2011, 2011, Cachan, France. pp.1-4. ⟨hal-00806720⟩

• Article dans une revue

Modal analysis and harmonic response of resonators : an extension of a mapped orthogonal functions technique

L. Elmaimouni, Jean-Etienne Lefebvre, F.E. Ratolojanahary, A. Raherison, Tadeusz Gryba, Julien Carlier

A mapped orthogonal functions technique is extended for solving three-dimensional acoustical wave problems with taking into account electrical sources. For validation and illustration purposes, it is applied to the determination of the frequency spectrum of a piezoelectric disc resonator.…

Wave Motion, 2011, 48, pp.93-104. ⟨10.1016/j.wavemoti.2010.09.001⟩. ⟨hal-00572652⟩

• Article dans une revue

Epitaxial GaAs for X-ray imaging

G. C. Sun, R. Rao, S. Makham, J. C. Bourgoin, X. Y. Zhang, R. Gohier, F. Masiello, J. Haertwig, J. Baruchel, C. Ponchut, Andrea Balocchi, Xavier Marie, O. Gilard, Isabelle Roch-Jeune, J. C. Pesant

To be used for X-ray imaging, semiconductor materials must exhibit good and uniform electronic properties. Epitaxial layers are therefore better adapted than bulk materials which contain dislocations, precipitates and point defects in variable concentrations depending on the growth mode and the…

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2011, 633 (1), pp.S65-S68. ⟨10.1016/j.nima.2010.06.123⟩. ⟨hal-01233828⟩

• Article dans une revue

Tunability of aluminum nitride acoustic resonators: a phenomenological approach

Emmanuel Defay, Nizar Ben Hassine, Patrick Emery, Guy Parat, Julie Abergel, Arnaud Devos

A phenomenological approach is developed to identify the physical parameters causing the dc-voltage-induced tunability of aluminum nitride (AlN) acoustic resonators, widely used for RF filters. The typical resonance frequency of these resonators varies from 2.038 GHz at -200 V to 2.062 GHz at +200…

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2011, 58, pp.2516-2520. ⟨10.1109/TUFFC.2011.2114⟩. ⟨hal-00783414⟩

• Article dans une revue

Complex permittivity determination with the transmission/reflection method

N. Jebbor, S. Bri, A. Nakheli, L. Bejjit, M. Haddad, A. Mamouni

International Journal of Emerging Sciences, 2011, 1, pp.682-695. ⟨hal-00783490⟩

• Article dans une revue

Band structures tunability of bulk 2D phononic crystals made of magneto-elastic materials

Jerome O. Vasseur, Olivier Bou Matar, J.F. Robillard, Anne-Christine Hladky, P.A. Deymier

AIP Advances, 2011, 1, pp.041904-1-12. ⟨10.1063/1.3676172⟩. ⟨hal-00783382⟩

• Article dans une revue

Atomic scale investigation of silicon nanowires and nanoclusters

Manuel Roussel, W.H. Chen, Etienne Talbot, Rodrigue Lardé, E. Cadel, F. Gourbilleau, B. Grandidier, D. Stievenard, Philippe Pareige

In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and…

Nanoscale Research Letters, 2011, 6, pp.271-1-6. ⟨10.1186/1556-276X-6-271⟩. ⟨hal-00597078⟩

• Article dans une revue

CMOS integration using low thermal budget dopant-segregated metallic S/D junctions on thin-body SOI

G. Larrieu, Emmanuel Dubois, D. Ducatteau

ECS Transactions, 2011, 41, pp.275-282. ⟨10.1149/1.3633307⟩. ⟨hal-00795902⟩

• Article dans une revue

Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

Xiaohui Tang, Christophe Krzeminski, Aurelien Lecavelier Des Etangs-Levallois, Zhenkun Chen, Emmanuel Dubois, Erich Kasper, Alim Karmous, Nicolas Reckinger, Denis Flandre, Laurent A. Francis, Jean-Pierre Collinge, Jean-Pierre Raskin

We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge…

Nano Letters, 2011, 11, pp.4520-4526. ⟨10.1021/nl202434k⟩. ⟨hal-00640212v2⟩

• Communication dans un congrès

Phase change memory as synapse for ultra-dense neuromorphic systems: application to complex visual pattern extraction

Manan Suri, Olivier Bichler, Damien Querlioz, Olga Cueto, Luca Perniola, Véronique Sousa, Dominique Vuillaume, Christian Gamrat, Barbara Desalvo

We demonstrate a unique energy efficient methodology to use Phase Change Memory (PCM) as synapse in ultra-dense large scale neuromorphic systems. PCM devices with different chalcogenide materials were characterized to demonstrate synaptic behavior. Multi-physical simulations were used to interpret…

IEEE International Electron Devices Meeting (IEDM 2011), Dec 2011, Washington, DC, United States. ⟨10.1109/IEDM.2011.6131488⟩. ⟨hal-00799997⟩