Publications

• Communication dans un congrès

Field confinement and its analysis in the THz range

Théo Hannotte, Ali Reda, Romain Peretti

Confining the electromagnetic field in sub wavelength volume is a widespread challenge in any range of photonics. One of the specificities of the THz range is the relatively low losses of metal allowing the use of metallic structure to achieve this confinement. In this conference, we will show: -…

The 11th International Symposium on Terahertz-Related Devices and Technologies, Jun 2024, Buffalo, United States. ⟨hal-04610036v2⟩

• Communication dans un congrès

Event-Driven Neural Network for Ultra-Low-Power On-Chip Keyword Spotting

Marc Chevalier, Benoit Larras, Antoine Frappé

Colloque National du GDR SoC², Jun 2024, Toulouse, France. ⟨hal-05053939⟩

• Communication dans un congrès

Low-Energy Floating-Point Flash Attention Mechanisms for 18nm FD-SOI CMOS

Joaquin Antonio Cornejo, Filipe Pouget, Sylvain Clerc, Tifenn Hirtzlin, Benoit Larras, Andreia Cathelin, Antoine Frappé

Colloque National du GDR SoC², Jun 2024, Toulouse, France. ⟨hal-05053945⟩

• Poster de conférence

Carrier density analysis in stressed n-doped GaN on sapphire layers

Ndembi Ignoumba-Ignoumba, Camille Sonneville, Éric Frayssinet, Adrien Bidaud, Florian Bartoli, Yvon Cordier, F Medjdoub, Dominique Planson, Cyril Buttay

GaN Marathon 2024, Jun 2024, Verona, Italy. 2024. ⟨hal-05054677⟩

• Communication dans un congrès

Carrier density analysis in stressed n-doped GaN layers on sapphire

Ndembi Ignoumba-Ignoumba, Camille Sonneville, Éric Frayssinet, Adrien Bidaud, Florian Bartoli, Yvon Cordier, F Medjdoub, Dominique Planson, Cyril Buttay

Using micro-Raman spectroscopy on MOCVD slightly n-doped GaN on sapphire structures (1.5 x 10$^{15}$ cm$^{-3}$ – 6.5 x 10$^{15}$ cm$^{-3}$), we report a method to dissociate biaxial stress contribution from n carrier concentration contribution in A1(LO) Raman peak position. For all characterized…

GaN Marathon, Jun 2024, Vérone, Italy. ⟨hal-04639487⟩

• Communication dans un congrès

High quality fully versus pseudo vertical GaN-on-Silicon pn diodes

Youssef Hamdaoui, Idriss Abid, Sondre Michler, Katir Ziouche, F Medjdoub

We report on high quality vertical GaN-on-silicon pn diodes. A successful scaling of the drift region thicknesses resulted in state-of-the-art breakdown voltage well above 1000 V (corresponding to a critical electric field of 2.3 MV/cm) together with low Ron (< 0.5 mΩ.cm²). Furthermore, a…

GaN Marathon, Jun 2024, VERONA, Italy. ⟨hal-04762008⟩

• Poster de conférence

An in-cell weight update scheme using one-hot gradients for on-chip learning

Mathieu Chêne, Benoit Larras, Andreas Kaiser, Antoine Frappé

<div><p>In the context of the Internet of Things , the trend is towards using artificial intelligence to process the data stream and extract useful information from it. In sensor networks, the most common approach is to send the raw data to a cloud to be processed by a centralised AI.…

18ème édition du Colloque National du GDR SoC2, Jun 2024, Toulouse, France. ⟨hal-05304131⟩

• Poster de conférence

Development of biomimetic anti-icing for second generation refrigerating systems

Florian Bas, Maude Jimenez, Vincent Thomy, Yannick Coffinier

Journée des doctorants (UMET), Jun 2024, Villeneuve d'Ascq, France. ⟨hal-04894852⟩

• Autre publication scientifique

Fortran : retour vers le futur !

Vincent Magnin

Après avoir établi un diagnostic sans concession des faiblesses de l'environnement de développement Fortran, la communauté Fortran-lang, créée fin 2019, s'y attaque méthodiquement. Le langage dispose désormais d'un site web central regroupant les informations indispensables aussi…

2024. ⟨hal-04604968⟩

• Communication dans un congrès

Pulsed laser deposition of Ba_0.85Ca_0.15Ti_0.9Zr_0.1O₃ thin films on polycrystalline Al₂O₃ substrates for energy harvesting

Guillaume Demily, Donovan Ledru, Moustapha Azankoud, Renaud Valois, Mégane Lheureux, Antonio Da Costa, Anthony Ferri, Denis Remiens, Freddy Ponchel, Rachel Desfeux, Marie-Hélène Chambrier