Publications

• Communication dans un congrès

Effects of the drain width on the electrical behavior of deep defect in AlGaN/GaN/SiC HEMTs

O. Fathallah, M. Gassoumi, S. Saadaoui, B. Grimbert, Christophe Gaquière, H. Maaref

27th International Conference on Microelectronics, MIEL 2010, 2010, pp.479-481, ⟨10.1109/MIEL.2010.5490440⟩. ⟨hal-00550032⟩

• Communication dans un congrès

Dual phononic and photonic band gaps in a periodic array of dots on a thin membrane

Y. El Hassouani, C. Li, Yan Pennec, Bahram Djafari-Rouhani, E.H. El Boudouti, Abdellatif Akjouj, Olivier Bou Matar, A. Martinez

1st Mediterranean Congress on Acoustics, MCA 2010, 2010, Salé, Morocco. ⟨hal-00808232⟩

• Communication dans un congrès

Résultats récents sur les commutateurs et mémoires moléculaires

K. Smaali, S. Lenfant, David Guérin, S. Karpe, M. Ocafrain, P. Blanchard, A. Rochefort, J. Roncali, D. Vuillaume

Session thématique champ proche du GDR 2426, Physique quantique mésoscopique, 2010, Paris, France. ⟨hal-00574079⟩

• Article dans une revue

Microstrip transmission line loaded by split-ring resonators tuned by ferroelectric thin film

Gregory Houzet, Didier Lippens, Ludovic Burgnies, Gabriel Velu, Jean-Claude Carru

The resonance frequency of Split-Ring Resonators (SRRs) loading a microstrip transmission line was tuned by means of a Ba0.5Sr0.5TiO3 (BST) ferroelectric thin film. For a bias of 30 Volts, we obtained a band-stop response with a shift around 7% of the resonance to higher frequencies in Ku band. The…

Progress In Electromagnetics Research C, 2010, 12, pp.225-236. ⟨10.2528/PIERC10012904⟩. ⟨hal-00548687⟩

• Communication dans un congrès

Explosive instability of ultrasound in solids

Vladimir Preobrazhensky, O. Yevstafyev, Philippe Pernod, V. Berzhansky

20th International Congress on Acoustics, ICA 2010, 2010, Sydney, Australia. ⟨hal-00808174⟩

• Communication dans un congrès

Acoustic study of bulk and shear modulus variation in alumina porous medium

G. Freiha, Georges Nassar, Pierre Campistron, Bertrand Nongaillard

1st Mediterranean Congress on Acoustics, MCA 2010, 2010, Salé, Morocco. ⟨hal-00808276⟩

• Article dans une revue

Thermal behavior analysis of GaN based epi-material on different substrates by means of a physical-thermal model

Xing Tang, Michel Rousseau, N. Defrance, Virginie Hoel, A. Soltani, R. Langer, Jean-Claude de Jaeger

For gallium nitride (GaN) based microwave power devices, the thermal behavior due to the self-heating effect constitutes a main limitation because the power dissipation is very high. For this study, a predictive physical-thermalmodel has been developed to analyze the physical and thermal phenomena…

Physica Status Solidi A (applications and materials science), 2010, 207, pp.1820-1826. ⟨10.1002/pssa.200925321⟩. ⟨hal-00549464⟩

• Chapitre d'ouvrage

Electrostatic force microscopy and Kelvin force microscopy as a probe of the electrostatic and electronic properties of carbon nanotubes

Thierry Melin, Mariusz Zdrojek, David Brunel

This chapter addresses recent experimental studies on carbon nanotubes and nanotube devices using electrical techniques derived from atomic force microscopy. Electrostatic force microscopy (EFM), Kelvin force microscope (KFM), and their variants are introduced. We show how EFM-related techniques…

B. Bhushan. Scanning probe microscopy in nanoscience and nanotechnology, Springer, chapitre 4, 89-128, 2010, ⟨10.1007/978-3-642-03535-7_4⟩. ⟨hal-00575864⟩

• Article dans une revue

Theoretical predictions of wurtzite III-nitride nano-materials properties

G. Guisbiers, D. Liu, Q. Jiang, L. Buchaillot

Physical Chemistry Chemical Physics, 2010, 12, pp.7203-7210. ⟨10.1039/c002496a⟩. ⟨hal-00548994⟩

• Article dans une revue

Two-terminal carbon nanotube programmable devices for adaptive architectures

Guillaume Agnus, Weisheng Zhao, Vincent Derycke, Arianna Filoramo, Y. Lhuillier, S. Lenfant, D. Vuillaume, C. Gamrat, J.P. Bourgoin

Carbon nanotube field-effect transistors functionalized with photoconducting polymer act as very efficient and non-volatile two-terminal programmable devices (see figure). Their optoelectronic programmability allows compensating for the critical issue of variability among as-built devices in…

Advanced Materials, 2010, 22, pp.702-706. ⟨10.1002/adma.200902170⟩. ⟨hal-00548986⟩