Publications

• Article dans une revue

Digital image correlation of metal nanofilms on SU-8 for flexible electronics and MEMS

Thierry Roland, S. Arscott, Laurent Sabatier, Lionel Buchaillot, Eric Charkaluk

This paper presents strain measurements using digital image correlation of common microelectronic metal nanofilms deposited onto a polymer substrate (SU-8), which has applications in flexible electronics and nano/microsystems reliability analysis. The novel experimental method is based on digital…

Journal of Micromechanics and Microengineering, 2011, 21 (12), pp.125005. ⟨10.1088/0960-1317/21/12/125005⟩. ⟨hal-00740993⟩

• Article dans une revue

Modal analysis and harmonic response of resonators : an extension of a mapped orthogonal functions technique

L. Elmaimouni, Jean-Etienne Lefebvre, F.E. Ratolojanahary, A. Raherison, Tadeusz Gryba, Julien Carlier

A mapped orthogonal functions technique is extended for solving three-dimensional acoustical wave problems with taking into account electrical sources. For validation and illustration purposes, it is applied to the determination of the frequency spectrum of a piezoelectric disc resonator.…

Wave Motion, 2011, 48, pp.93-104. ⟨10.1016/j.wavemoti.2010.09.001⟩. ⟨hal-00572652⟩

• Article dans une revue

Three wave coupling and explosive instability of magneto-elastic excitations in FeBO3 single crystal

O. Yevstafyev, Vladimir Preobrazhensky, Philippe Pernod, V. Berzhansky, And Joint European Laboratory Lemac

Journal of Magnetism and Magnetic Materials, 2011, 323, pp.1568-1573. ⟨10.1016/j.jmmm.2011.01.020⟩. ⟨hal-00579073⟩

• Article dans une revue

Modelling of optical Kerr effects on the static and dynamic behaviors of quantum cascade laser

A. Hamadou, Jean-Luc Thobel

Optics Communications, 2011, 284, pp.2972-2979. ⟨10.1016/j.optcom.2011.01.078⟩. ⟨hal-00591326⟩

• Article dans une revue

Tunability of aluminum nitride acoustic resonators: a phenomenological approach

Emmanuel Defay, Nizar Ben Hassine, Patrick Emery, Guy Parat, Julie Abergel, Arnaud Devos

A phenomenological approach is developed to identify the physical parameters causing the dc-voltage-induced tunability of aluminum nitride (AlN) acoustic resonators, widely used for RF filters. The typical resonance frequency of these resonators varies from 2.038 GHz at -200 V to 2.062 GHz at +200…

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2011, 58, pp.2516-2520. ⟨10.1109/TUFFC.2011.2114⟩. ⟨hal-00783414⟩

• Article dans une revue

Complex permittivity determination with the transmission/reflection method

N. Jebbor, S. Bri, A. Nakheli, L. Bejjit, M. Haddad, A. Mamouni

International Journal of Emerging Sciences, 2011, 1, pp.682-695. ⟨hal-00783490⟩

• Article dans une revue

Band structures tunability of bulk 2D phononic crystals made of magneto-elastic materials

Jerome O. Vasseur, Olivier Bou Matar, J.F. Robillard, Anne-Christine Hladky, P.A. Deymier

AIP Advances, 2011, 1, pp.041904-1-12. ⟨10.1063/1.3676172⟩. ⟨hal-00783382⟩

• Article dans une revue

Atomic scale investigation of silicon nanowires and nanoclusters

Manuel Roussel, W.H. Chen, Etienne Talbot, Rodrigue Lardé, E. Cadel, F. Gourbilleau, B. Grandidier, D. Stievenard, Philippe Pareige

In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and…

Nanoscale Research Letters, 2011, 6, pp.271-1-6. ⟨10.1186/1556-276X-6-271⟩. ⟨hal-00597078⟩

• Article dans une revue

CMOS integration using low thermal budget dopant-segregated metallic S/D junctions on thin-body SOI

G. Larrieu, Emmanuel Dubois, D. Ducatteau

ECS Transactions, 2011, 41, pp.275-282. ⟨10.1149/1.3633307⟩. ⟨hal-00795902⟩

• Article dans une revue

Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

Xiaohui Tang, Christophe Krzeminski, Aurelien Lecavelier Des Etangs-Levallois, Zhenkun Chen, Emmanuel Dubois, Erich Kasper, Alim Karmous, Nicolas Reckinger, Denis Flandre, Laurent A. Francis, Jean-Pierre Collinge, Jean-Pierre Raskin

We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge…

Nano Letters, 2011, 11, pp.4520-4526. ⟨10.1021/nl202434k⟩. ⟨hal-00640212v2⟩