Publications

Affichage de 9571 à 9580 sur 16181


  • Communication dans un congrès

Atomic force probe using silicon ring resonator conception

B. Walter, E. Mairiaux, M. Faucher, Z. Xiong, L. Buchaillot, Bernard Legrand

5èmes Journées Nationales du GDR Micro et Nano Systèmes, 2010, Lyon, France. ⟨hal-00808199⟩

  • Article dans une revue

Nonequilibrium fluctuation relations in a quantum coherent conductor

S. Nakamura, Y. Yamauchi, M. Hashisaka, K. Chida, K. Kobayashi, T. Ono, R. Leturcq, K. Ensslin, K. Saito, Y. Utsumi, A.C. Gossard

We experimentally demonstrate the validity of non-equilibrium fluctuation relations by using a quantum coherent conductor. In equilibrium the fluctuation-dissipation relation leads to the correlation between current and current noise at the conductor, namely, Johnson-Nyquist relation. When the…

Physical Review Letters, 2010, 104 (8), pp.080602. ⟨10.1103/PhysRevLett.104.080602⟩. ⟨hal-00549432⟩

  • Article dans une revue

Dielectric microwave characterizations of (Ba,Sr)TiO3 film deposited on high resistivity silicon substrate : analysis by two-dimensional tangential finite element method

Freddy Ponchel, J. Midy, Jean-François Legier, Caroline Soyer, Denis Remiens, T. Lasri, G. Gueguan

Journal of Applied Physics, 2010, 107, pp.054112-1-5. ⟨10.1063/1.3309423⟩. ⟨hal-00549504⟩

  • Article dans une revue

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, Didier Theron, Christophe Gaquière, M.A. Poisson, S. Delage, P. Pristawko, C. Skierbiszewski

We report on room temperature terahertz generation by a submicron size AlGaN/GaN-based high electron mobility transistors. The emission peak is found to be tunable by the gate voltage between 0.75 and 2.1 THz. Radiation frequencies correspond to the lowest fundamental plasma mode in the gated…

Journal of Applied Physics, 2010, 107 (2), pp.024504. ⟨10.1063/1.3291101⟩. ⟨hal-00549452⟩