Publications

• Communication dans un congrès

On the influence of surfaces topology and related boundary conditions on the polarization relaxation in nanoferroelectics

Laurent Baudry

19th International Symposium on the Applications of Ferroelectrics, 10th European Conference on the Applications of Polar Dielectrics, ISAF-ECAPD 2010, 2010, Edinburgh, Scotland, France. ⟨hal-00574446⟩

• Communication dans un congrès

Band offsets in PbSe/CdSe core-shell nanocrystals

Justin Habinshuti, Y. Justo, T.H. Nguyen, O. Cristini, F. Bourne, J.J. Gallet, Z. Hens, S. Turrell, B. Grandidier

Nanoscience with Nanocrystals International Conference, NaNaX4, 2010, Munich, Germany. ⟨hal-00574408⟩

• Communication dans un congrès

Vertical coaxial transitions for MM-waves 3D integration technologies

R. Crunelle, S. Seok, J. Kim, M. Fryziel, N. Rolland, A. Cathelin, P. Rolland

40th European Microwave Conference, EuMC 2010, 2010, France. pp.101-104. ⟨hal-00549940⟩

• Article dans une revue

Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications

J. Ratajczak, A. Laszcz, A. Czerwinski, J. Katcki, F. Phillipp, P.A. van Aken, N. Reckinger, Emmanuel Dubois

In this paper, we present results of transmission electron microscopy studies on erbium silicide structures fabricated under various thermal conditions. A titanium cap has been used as a protective layer against oxidation during rapid thermal annealing of an erbium layer in a temperature range of…

Journal of Microscopy, 2010, EM 2008 ‐ XIII International Conference on Electron Microscopy, 237 (3), pp.379-383. ⟨10.1111/j.1365-2818.2009.03264.x⟩. ⟨hal-00549623⟩

• Article dans une revue

Negative refraction of surface acoustic waves in the subgigahertz range

Bernard Bonello, Laurent Belliard, Juliette Pierre, Jerome O. Vasseur, Bernard Perrin, Olga Boyko-Kazymyrenko

We used the picosecond ultrasonic technique to experimentally demonstrate the negative refraction of surface acoustic waves in a two-dimensional phononic crystal. The sample is made of a square lattice of circular voids drilled at the surface of a thick silica substrate. The lattice parameter is of…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.104109-1-5. ⟨10.1103/PhysRevB.82.104109⟩. ⟨hal-00549435⟩

• Article dans une revue

Synthesis of compact and highly selective filters via metamaterial-inspired coplanar waveguide line technologies

Alejandro Borja, Jorge Carbonell, Vicente Boria, Joaquin Cascon, Didier Lippens

In this study, two split ring resonator-based coplanar waveguide cells operating in C-band are studied. Particularly, the lines have been loaded with double shunt strips or series gaps. The use of double strips allows controlling the electric plasma frequency, and at the same time permits one to…

iet microwaves, Antennas & Propagation, 2010, 4 (8), pp.1098-1104. ⟨10.1049/iet-map.2009.0583⟩. ⟨hal-00548690⟩

• Article dans une revue

Fabrication of 24-MHz-disk resonators with silicon passive integration technology

M. Sworowski, F. Neuilly, Bernard Legrand, A. Summanwar, P. Philippe, L. Buchaillot

IEEE Electron Device Letters, 2010, 31, pp.23-25. ⟨10.1109/LED.2009.2034542⟩. ⟨hal-00548984⟩

• Article dans une revue

Image reconstruction using a photonic crystal based flat lens operating at 1.55 μm

M. Hofman, D. Lippens, O. Vanbesien

Applied optics, 2010, 49, pp.5806-5813. ⟨10.1364/AO.49.005806⟩. ⟨hal-00548625⟩

• Article dans une revue

Three-terminal junctions operating as mixers, frequency doublers and detectors : a broad-band frequency numerical and experimental study at room temperature

I. Iniguez-De-La-Torre, T. Gonzalez, D. Pardo, C. Gardes, Yannick Roelens, S. Bollaert, A. Curutchet, Christophe Gaquière, J. Mateos

Semiconductor Science and Technology, 2010, 25, pp.125013-1-14. ⟨10.1088/0268-1242/25/12/125013⟩. ⟨hal-00548604⟩

• Article dans une revue

Graphene growth by molecular beam epitaxy using a solid carbon source

E. Moreau, F.J. Ferrer, D. Vignaud, S. Godey, X. Wallart

The direct elaboration of graphene by molecular beam epitaxy (MBE) has been studied, using a solid carbon source. Successful growth has been achieved on both the carbon and silicon terminated faces of silicon carbide substrates in the temperature range 1000-1100 °C, as confirmed by low energy…

Physica Status Solidi A (applications and materials science), 2010, 207, pp.300-303. ⟨10.1002/pssa.200982412⟩. ⟨hal-00549551⟩