Publications
Affichage de 9621 à 9630 sur 16181
Continuous wave terahertz photomixer from low temperature grown GaAs with high carrier mobility
H. Tanoto, Q.Y. Wu, J.H. Teng, M. Sun, Z.N. Chen, T. Htoo, S.J. Chua, Jean-Francois Lampin, A. Gokarna, El Hadj Dogheche
35th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2010, 2010, Italy. pp.1-2, ⟨10.1109/ICIMW.2010.5612417⟩. ⟨hal-00549948⟩
High resolution seismic investigation in salt mining context
A. Kosecki, Bogdan Piwakowski, L. Driad-Lebeau
Acta Geophysica, 2010, 58, pp.15-33. ⟨10.2478/s11600-009-0056-z⟩. ⟨hal-00567895⟩
Photonic band structure of 1D periodic composite system with left handed and right handed materials by Green function method
Abdelmajid Essadqui, Jawad Ben-Ali, Driss Bria, Bahram Djafari-Rouhani, Abdlekarim Nougaoui
Progress In Electromagnetics Research B, 2010, 23, pp.229-249. ⟨10.2528/PIERB10032404⟩. ⟨hal-00567882⟩
Thermal resistance of AlGaN/GaN HEMTs on SopSiC composite substrate
N. Defrance, Y. Douvry, Virginie Hoel, J.C. Gerbedoen, A. Soltani, Michel Rousseau, Jean-Claude de Jaeger, R. Langer, H. Lahreche
Electronics Letters, 2010, 46, pp.949-950. ⟨10.1049/el.2010.0431⟩. ⟨hal-00549463⟩
AlInN/AlN/GaN HEMT technology on SiC with 10-W/mm and 50% PAE at 10 GHz
N. Sarazin, E. Morvan, M.A. Di Forte Poisson, M. Oualli, Christophe Gaquière, O. Jardel, O. Drisse, M. Tordjman, M. Magis, S.L. Delage
IEEE Electron Device Letters, 2010, 31, pp.11-13. ⟨10.1109/LED.2009.2035145⟩. ⟨hal-00549451⟩
Wykorzystanie metody Monte Carlo do modelowania wlasciwosci struktur kwantowych laserów kaskadowych
P. Borowik, L. Adamowicz, Jean-Luc Thobel
IX Krajowa Konferencja Elektroniki, KKE 2010, 2010, Poland. pp.96-98. ⟨hal-00568968⟩
Tuning and switching the hypersonic phononic properties of elastic impedance contrast nanocomposites
A. Sato, Yan Pennec, N. Shingne, T. Thum-Albrecht, W. Knoll, M. Steinhart, Bahram Djafari-Rouhani, G. Fytas
ACS Nano, 2010, 4, pp.3471-3481. ⟨10.1021/nn100519h⟩. ⟨hal-00549446⟩
High frequency modelling of power transformer : application to railway substation in scale model
H. Ouaddi, S. Baranowski, N. Idir
Przeglad Elektrotechniczny , 2010, 86, pp.165-169. ⟨hal-00549475⟩
Deep levels in AlGaN/GaN HEMTs on silicon substrate are characterized by current deep level transient spectroscopy
H. Mosbahi, M. Gassoumi, Christophe Gaquière, M.A. Zaidi, H. Maaref
Optoelectronics and Advanced Materials - Rapid Communications, 2010, 4, pp.1783-1785. ⟨hal-00567897⟩
Low microwave noise of AlGaN/GaN HEMTs fabricated on SiCopSiC substrates
Virginie Hoel, N. Defrance, Y. Douvry, Jean-Claude de Jaeger, N. Vellas, Christophe Gaquière, M.A. Di Forte-Poisson, J. Thorpe, R. Langer
Electronics Letters, 2010, 46, pp.84-85. ⟨10.1049/el.2010.2576⟩. ⟨hal-00549457⟩