Publications

• Article dans une revue

Correlation-induced conductance suppression at level degeneracy in a quantum dot

H.A. Nilsson, O. Karlström, M. Larsson, P. Caroff, J.N. Pedersen, L. Samuelson, A. Wacker, L.E. Wernersson, H.Q. Xu

The large, level-dependent g-factors in an InSb nanowire quantum dot allow for the occurrence of a variety of level crossings in the dot. While we observe the standard conductance enhancement in the Coulomb blockade region for aligned levels with different spins due to the Kondo effect, a vanishing…

Physical Review Letters, 2010, 104 (18), pp.186804. ⟨10.1103/PhysRevLett.104.186804⟩. ⟨hal-00548700⟩

• Article dans une revue

Transport through open quantum dots : making semiclassics quantitative

I. Brezinova, L. Wirtz, S. Rotter, C. Stampfer, J. Burgdorfer

We investigate electron transport through clean open quantum dots (“quantum billiards”). We present a semiclassical theory that allows to accurately reproduce quantum transport calculations. Quantitative agreement is reached for individual energy and magnetic field dependent elements of the…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81, pp.125308-1-19. ⟨10.1103/PhysRevB.81.125308⟩. ⟨hal-00549445⟩

• Article dans une revue

Quantitative testing of robustness on superomniphobic surfaces by drop impact

Thi Phuong Nhung Nguyen, Philippe Brunet, Yannick Coffinier, Rabah Boukherroub

The quality of a liquid-repellent surface is quantified by both the apparent contact angle θ0 that a sessile drop adopts on it, and the value of the liquid pressure threshold the surface can withstand without being impaled by the liquid, hence keeping a low-friction condition. We designed surfaces…

Langmuir, 2010, 26 (23), pp.18369-18373. ⟨10.1021/la103097y⟩. ⟨hal-00551284⟩

• Article dans une revue

Study of the effect of gas pressure and catalyst droplets number density on silicon nanowires growth, tapering, and gold coverage

W.H. Chen, Rodrigue Lardé, E. Cadel, T. Xu, B. Grandidier, J.P. Nys, D. Stievenard, Philippe Pareige

We investigated the growth of silicon nanowires from Au-rich catalyst droplets by two different methods: chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). The growth rate is found to be diameter-dependent and increases with increasing precursor partial pressures. The comparison of…

Journal of Applied Physics, 2010, 107 (8), pp.0849028. ⟨10.1063/1.3359648⟩. ⟨hal-00549438⟩

• Article dans une revue

Ultrasonic and acoustic investigation of cheese matrix at the beginning and the end of ripening period

Georges Nassar, Fabrice Lefebvre, A. Skaf, Julien Carlier, Bertrand Nongaillard, Y. Noel

In this paper, a low frequency, dry contact, ultrasonic technique devoted to the study and characterization of cheeses at the beginning and the end of ripening period is investigated. For compact or weakly opened matrix found in the early step of cheese making, ultrasonic velocity is indicated to…

Journal of Food Engineering, 2010, 96, pp.1-13. ⟨10.1016/j.jfoodeng.2009.06.029⟩. ⟨hal-00549529⟩

• Communication dans un congrès

Preliminary studies for a microbioreactor development coupled to electromechanical system for enzyme reaction analysis in terahertz radiations

Abdennour Abbas, A. Treizebre, Philippe Supiot, Nour Eddine Bourzgui, Renato Froidevaux, Didier Guillochon, Dominique Vercaigne-Marko, Bertrand Bocquet

8th European Symposium on Biochemical Engineering Science, ESBES-8, 2010, Bologna, Italy. ⟨hal-00574465⟩

• Communication dans un congrès

Dépôt de polymères organosiliciés par PECVD et RPECVD sur substrats structurés

P. Supiot, Céline Vivien, V. Rouessac, S. Roualdes

MATERIAUX 2010, Conférence pluridisciplinaire sur les matériaux, 2010, France. pp.1-4. ⟨hal-00573205⟩

• Article dans une revue

Kinetics of RPECVD organosilicon polymer post-treatment in a N2/O2 microwave plasma remote afterglow

S. Abou Rich, V. Mille, Céline Vivien, S. Godey, P. Supiot

Plasma Processes and Polymers, 2010, 7, pp.775-784. ⟨10.1002/ppap.200900185⟩. ⟨hal-00549497⟩

• Article dans une revue

Development of Time-resolved UV Micro-Raman Spectroscopy to measure temperature in AlGaN/GaN HEMTs

Ophélie Lancry, Emmanuelle Pichonat, Julien Réhault, Myriam Moreau, Raphaël Aubry, Christophe Gaquière

We report on the development of Time-resolved Ultraviolet Micro-Raman Scattering to measure transient self-heating effects in semiconductor devices. Temperature measurements are performed on AlGaN/GaN High-electron-mobility transistors (HEMTs) grown on SiC substrate. Ultraviolet excitation probes…

Solid-State Electronics, 2010, 54, pp.1434 - 1437. ⟨10.1016/j.sse.2010.05.029⟩. ⟨hal-00514166⟩

• Article dans une revue

Materials selection procedure for RF-MEMS

G. Guisbiers, E. Herth, Bernard Legrand, N. Rolland, T. Lasri, L. Buchaillot

Microelectronic Engineering, 2010, 87, pp.1792-1795. ⟨10.1016/j.mee.2009.10.016⟩. ⟨hal-00549627⟩