Publications

• Communication dans un congrès

A novel wafer level bonding/debonding technique using an anti-adhesion layer for polymer-based zero-level packaging of RF device

J.G. Kim, S. Seok, N. Rolland, P.A. Rolland

60th Electronic Components and Technology Conference, ECTC 2010, 2010, Las Vegas, NV, United States. pp.323-328, ⟨10.1109/ECTC.2010.5490954⟩. ⟨hal-00800848⟩

• Communication dans un congrès

Hexagonal boron nitride nanowalls synthesized by unbalanced RF magnetron sputtering

B. Ben Moussa, J. d'Haen, C. Borschel, M. Saitner, A. Soltani, V. Mortet, C. Ronning, M. d'Olieslaeger, H.G. Boyen, K. Haenen

Materials Research Society Fall Meeting, MRS Fall 2010, Symposium CC : Boron and boron compounds - From fundamentals to applications, 2010, Boston, MA, United States. pp.mrsf10-1307-cc06-09, 1-6, ⟨10.1557/opl.2011.505⟩. ⟨hal-00800885⟩

• Article dans une revue

Tuning and switching the hypersonic phononic properties of elastic impedance contrast nanocomposites

A. Sato, Yan Pennec, N. Shingne, T. Thum-Albrecht, W. Knoll, M. Steinhart, Bahram Djafari-Rouhani, G. Fytas

ACS Nano, 2010, 4, pp.3471-3481. ⟨10.1021/nn100519h⟩. ⟨hal-00549446⟩

• Communication dans un congrès

On the appearance of metastable vortex state in ferroelectrics oxides, or how interfaces can change the type of polar state and the switching mechanism

L. Baudry, A. Sene, Igor A. Luk'Yanchuk, L. Lahoche

European Materials Research Society Spring Meeting, E-MRS Spring 2010, Symposium E : Frontiers of multifunctional oxides, 2010, Strasbourg, France. ⟨hal-00574448⟩

• Article dans une revue

Testing the temperature limits of GaN-based HEMT devices

D. Maier, M. Alomari, N. Grandjean, J.F. Carlin, M.A. Di Forte-Poisson, C. Dua, A. Chuvilin, David Troadec, Christophe Gaquière, U. Kaiser, S.L. Delage, E. Kohn

IEEE Transactions on Device and Materials Reliability, 2010, 10, pp.427-436. ⟨10.1109/TDMR.2010.2072507⟩. ⟨hal-00579038⟩

• Article dans une revue

Label-free analysis of water-polluting parasite by electrochemical impedance spectroscopy

T. Houssin, J. Follet, A. Follet, E. Dei-Casa, V. Senez

Biosensors and Bioelectronics, 2010, 25, pp.1122-1129. ⟨10.1016/j.bios.2009.09.039⟩. ⟨hal-00549495⟩

• Article dans une revue

Control of III-V nanowire crystal structure by growth parameter tuning [Invited]

Kimberly A. Dick, Philippe Caroff, Jessica Bolinsson, Maria E. Messing, Jonas Johansson, Knut Deppert, L.R. Wallenberg, Lars Samuelson

In this work we investigate the variation of the crystal structure of gold-seeded III–V nanowires with growth parameters, in order to gain a cohesive understanding of these effects. We investigate six III–V materials: GaAs, InAs, GaP, InP, GaSb and InSb, over a variation of growth conditions. All…

Semiconductor Science and Technology, 2010, 25 (2), pp.024009-1-11. ⟨10.1088/0268-1242/25/2/024009⟩. ⟨hal-00548699⟩

• Article dans une revue

A theoretical and experimental study of the BCB thin-film cap zero-level package based on FEM simulations

S. Seok, N. Rolland, P.A. Rolland

Journal of Micromechanics and Microengineering, 2010, 20, pp.095010-1-7. ⟨10.1088/0960-1317/20/9/095010⟩. ⟨hal-00548602⟩

• Article dans une revue

Improved dielectric properties of Bi1.5Zn1.0Nb1.5O7/(111)-oriented Ba0.6Sr0.4TiO3 bilayered films for tunable microwave applications

L.H. Yang, G.S. Wang, X.L. Dong, Denis Remiens

Journal of the American Ceramic Society, 2010, 93, pp.1215-1217. ⟨10.1111/j.1551-2916.2009.03516.x⟩. ⟨hal-00549505⟩

• Chapitre d'ouvrage

Introduction to Schottky-barrier MOS architectures : concept, challenges, material engineering and device integration

Emmanuel Dubois, G. Larrieu, R. Valentin, N. Breil, Francois Danneville

Balestra F. Nanoscale CMOS : innovative materials, modeling and characterization, ISTE-WILEY, Chapitre 5, 157-204, 2010. ⟨hal-00575852⟩