Publications

• Article dans une revue

Fabrication of 24-MHz-disk resonators with silicon passive integration technology

M. Sworowski, F. Neuilly, Bernard Legrand, A. Summanwar, P. Philippe, L. Buchaillot

IEEE Electron Device Letters, 2010, 31, pp.23-25. ⟨10.1109/LED.2009.2034542⟩. ⟨hal-00548984⟩

• Article dans une revue

An organic nanoparticle transistor behaving as a biological spiking synapse

F. Alibart, S. Pleutin, David Guérin, C. Novembre, S. Lenfant, K. Lmimouni, C. Gamrat, D. Vuillaume

Molecule-based devices are envisioned to complement silicon devices by providing new functions or by implementing existing functions at a simpler process level and lower cost, by virtue of their self-organization capabilities. Moreover, they are not bound to von Neuman architecture and this feature…

Advanced Functional Materials, 2010, 20, pp.330-337. ⟨10.1002/adfm.200901335⟩. ⟨hal-00548959⟩

• Article dans une revue

Three-terminal junctions operating as mixers, frequency doublers and detectors : a broad-band frequency numerical and experimental study at room temperature

I. Iniguez-De-La-Torre, T. Gonzalez, D. Pardo, C. Gardes, Yannick Roelens, S. Bollaert, A. Curutchet, Christophe Gaquière, J. Mateos

Semiconductor Science and Technology, 2010, 25, pp.125013-1-14. ⟨10.1088/0268-1242/25/12/125013⟩. ⟨hal-00548604⟩

• Article dans une revue

Image reconstruction using a photonic crystal based flat lens operating at 1.55 μm

M. Hofman, D. Lippens, O. Vanbesien

Applied optics, 2010, 49, pp.5806-5813. ⟨10.1364/AO.49.005806⟩. ⟨hal-00548625⟩

• Communication dans un congrès

Sub-terahertz resistive mixing in a AlGaN/GaN HEMT

Kamel Madjour, Guillaume Ducournau, Sylvie Lepilliet, Tahsin Akalin, Jean-Francois Lampin, Marie-Antoinette Di Forte-Poisson, Sylvain Laurent Delage, Christophe Gaquière

An AlGaN/GaN based field effect transistor (FET) has been designed, fabricated, and used as a resistive mixer for heterodyne detection in the 140-220 GHz frequency range. A double VNA heterodyne measurement setup has been used in an on-wafer configuration to accurately quantify the incident…

35th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2010, Sep 2010, Rome, Italy. pp.1-2, ⟨10.1109/ICIMW.2010.5612437⟩. ⟨hal-00550020⟩

• Communication dans un congrès

A multifunctional 60-GHz system for automotive applications with communication and positioning abilities based on time reversal

Michael Bocquet, Christophe Loyez, C. Lethien, N. Deparis, M. Heddebaut, Atika Rivenq, N. Rolland

7th European Radar Conference, EuRAD 2010, 2010, France. pp.61-64. ⟨hal-00550029⟩

• Communication dans un congrès

Comparison of low phase noise oscillators topologies using BAW resonator

M. Li, S. Seok, N. Rolland, P.A. Rolland, H. El Aabbaoui, E. de Foucauld, P. Vincent

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.345-348. ⟨hal-00549942⟩

• Communication dans un congrès

Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors

N. Dyakonova, A. El Fatimy, Y. Meziani, T. Otsuji, D. Coquillat, W. Knap, F. Teppe, S. Vandenbrouk, K. Madjour, D. Theron, Christophe Gaquière, M.A. Poisson, S. Delage

35th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2010, 2010, Italy. pp.1-2, ⟨10.1109/ICIMW.2010.5612620⟩. ⟨hal-00550019⟩

• Communication dans un congrès

Vertical coaxial transitions for MM-waves 3D integration technologies

R. Crunelle, S. Seok, J. Kim, M. Fryziel, N. Rolland, A. Cathelin, P. Rolland

40th European Microwave Conference, EuMC 2010, 2010, France. pp.101-104. ⟨hal-00549940⟩

• Article dans une revue

Negative refraction of surface acoustic waves in the subgigahertz range

Bernard Bonello, Laurent Belliard, Juliette Pierre, Jerome O. Vasseur, Bernard Perrin, Olga Boyko-Kazymyrenko

We used the picosecond ultrasonic technique to experimentally demonstrate the negative refraction of surface acoustic waves in a two-dimensional phononic crystal. The sample is made of a square lattice of circular voids drilled at the surface of a thick silica substrate. The lattice parameter is of…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.104109-1-5. ⟨10.1103/PhysRevB.82.104109⟩. ⟨hal-00549435⟩