Publications

• Communication dans un congrès

Surface potential and charge distribution in graphene : an electrostatic force microscopy study

A. Mahmood, Thierry Melin, D. Vuillaume, Erik Dujardin

11th International Conference on the Science and Application of Nanotubes, NT10, 2010, Montreal, Canada. ⟨hal-00574402⟩

• Communication dans un congrès

Nanostructured inorganic-organic hybrid materials based on semiconducting organic nanofibres and quantum dots and their application to plastic solar cells

F. Chandezon, T. Jiu, L.A. Sanchez Rodas, S. Berson, R. de Bettignies, S. Bailly, D. Tondelier, J. Faure-Vincent, P. Reiss, D. Vuillaume, S. Guillerez

6th International ECNP Conference on Nanostructured Polymers and Nanocomposites, 2010, Madrid, Spain. ⟨hal-00574048⟩

• Communication dans un congrès

Molecular relaxation dynamics in organic monolayer junctions

N. Clement, S. Pleutin, D. Vuillaume

International Conference on Molecular Electronics, 2010, Emmetten, Switzerland. ⟨hal-00574097⟩

• Communication dans un congrès

Résultats récents sur les commutateurs et mémoires moléculaires

K. Smaali, S. Lenfant, David Guérin, S. Karpe, M. Ocafrain, P. Blanchard, A. Rochefort, J. Roncali, D. Vuillaume

Session thématique champ proche du GDR 2426, Physique quantique mésoscopique, 2010, Paris, France. ⟨hal-00574079⟩

• Communication dans un congrès

Fabrication et caractérisation de MOSFET In0.53Ga0.47As de type N en technologie auto-aligné et de longueur de grille de 200nm

J.J Mo

13èmes Journées Nationales du Réseau Doctoral en Microélectronique, JNRDM 2010, 2010, France. pp.CD-ROM, Session Matériaux 2. ⟨hal-00572218⟩

• Article dans une revue

Two-terminal carbon nanotube programmable devices for adaptive architectures

Guillaume Agnus, Weisheng Zhao, Vincent Derycke, Arianna Filoramo, Y. Lhuillier, S. Lenfant, D. Vuillaume, C. Gamrat, J.P. Bourgoin

Carbon nanotube field-effect transistors functionalized with photoconducting polymer act as very efficient and non-volatile two-terminal programmable devices (see figure). Their optoelectronic programmability allows compensating for the critical issue of variability among as-built devices in…

Advanced Materials, 2010, 22, pp.702-706. ⟨10.1002/adma.200902170⟩. ⟨hal-00548986⟩

• Article dans une revue

Atomistic modeling of electron-phonon coupling and transport properties in n-type [110] silicon nanowires

Wenxing Zhang, Christophe Delerue, Yann-Michel Niquet, Guy Allan, Enge Wang

Using a sp3d5s∗ tight-binding model for electrons and a valence force-field model for phonons, we study the transport properties of [110]-oriented silicon nanowires including all electron-phonon interactions. Using a full resolution of the Boltzmann transport equation, the low-field mobility is…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.115319-1-7. ⟨10.1103/PhysRevB.82.115319⟩. ⟨hal-00549040⟩

• Article dans une revue

Explosive instability of quasi-phonon triads in antiferromagnet under frequency modulated electromagnetic field

Vladimir Preobrazhensky, O. Yevstafyev, Philippe Pernod, V. Berzhansky

Journal of Magnetism and Magnetic Materials, 2010, 322, pp.585-588. ⟨10.1016/j.jmmm.2009.09.067⟩. ⟨hal-00548960⟩

• Article dans une revue

Theoretical predictions of wurtzite III-nitride nano-materials properties

G. Guisbiers, D. Liu, Q. Jiang, L. Buchaillot

Physical Chemistry Chemical Physics, 2010, 12, pp.7203-7210. ⟨10.1039/c002496a⟩. ⟨hal-00548994⟩

• Article dans une revue

Materials selection procedure for RF-MEMS

G. Guisbiers, E. Herth, Bernard Legrand, N. Rolland, T. Lasri, L. Buchaillot

Microelectronic Engineering, 2010, 87, pp.1792-1795. ⟨10.1016/j.mee.2009.10.016⟩. ⟨hal-00549627⟩