Publications

• Communication dans un congrès

High transconductance AlGaN/GaN HEMT with thin barrier on Si(111) substrate

F. Lecourt, Y. Douvry, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, S. Bouzid, M. Renvoise, D. Smith, H. Maher

40th European Solid-State Device Research Conference, ESSDERC 2010, 2010, Spain. pp.281-284, ⟨10.1109/ESSDERC.2010.5618362⟩. ⟨hal-00549999⟩

• Article dans une revue

Microstrip transmission line loaded by split-ring resonators tuned by ferroelectric thin film

Gregory Houzet, Didier Lippens, Ludovic Burgnies, Gabriel Velu, Jean-Claude Carru

The resonance frequency of Split-Ring Resonators (SRRs) loading a microstrip transmission line was tuned by means of a Ba0.5Sr0.5TiO3 (BST) ferroelectric thin film. For a bias of 30 Volts, we obtained a band-stop response with a shift around 7% of the resonance to higher frequencies in Ku band. The…

Progress In Electromagnetics Research C, 2010, 12, pp.225-236. ⟨10.2528/PIERC10012904⟩. ⟨hal-00548687⟩

• Article dans une revue

AlGaN/GaN HEMTs on (001) silicon substrate with power density performance of 2.9 W/mm at 10 GHz

J.C. Gerbedoen, A. Soltani, S. Joblot, Jean-Claude de Jaeger, Christophe Gaquière, Y. Cordier, F. Semond

IEEE Transactions on Electron Devices, 2010, 57, pp.1497-1503. ⟨10.1109/TED.2010.2048792⟩. ⟨hal-00549455⟩

• Article dans une revue

Thermal behavior analysis of GaN based epi-material on different substrates by means of a physical-thermal model

Xing Tang, Michel Rousseau, N. Defrance, Virginie Hoel, A. Soltani, R. Langer, Jean-Claude de Jaeger

For gallium nitride (GaN) based microwave power devices, the thermal behavior due to the self-heating effect constitutes a main limitation because the power dissipation is very high. For this study, a predictive physical-thermalmodel has been developed to analyze the physical and thermal phenomena…

Physica Status Solidi A (applications and materials science), 2010, 207, pp.1820-1826. ⟨10.1002/pssa.200925321⟩. ⟨hal-00549464⟩

• Article dans une revue

Synchronization sensitivity of block-IFDMA systems

E.P. Simon, D.P. Gaillot, Virginie Degardin

IEEE Transactions on Wireless Communications, 2010, 9, pp.256-267. ⟨10.1109/TWC.2010.01.090173⟩. ⟨hal-00549481⟩

• Article dans une revue

Enhancement of biosensing performance in a droplet-based bioreactor by in situ microstreaming

O. Ducloux, E. Galopin, Farzam Zoueshtiagh, A. Merlen, V. Thomy

Biomicrofluidics, 2010, 4, pp.011102-1-5. ⟨10.1063/1.3310930⟩. ⟨hal-00549490⟩

• Article dans une revue

Coulomb energy determination of a single Si dangling bond

T.H. Nguyen, G. Mahieu, Maxime Berthe, B. Grandidier, C. Delerue, D. Stievenard, P. Ebert

Physical Review Letters, 2010, 105, pp.226404-1-4. ⟨10.1103/PhysRevLett.105.226404⟩. ⟨hal-00549059⟩

• Article dans une revue

Atomistic modeling of electron-phonon coupling and transport properties in n-type [110] silicon nanowires

Wenxing Zhang, Christophe Delerue, Yann-Michel Niquet, Guy Allan, Enge Wang

Using a sp3d5s∗ tight-binding model for electrons and a valence force-field model for phonons, we study the transport properties of [110]-oriented silicon nanowires including all electron-phonon interactions. Using a full resolution of the Boltzmann transport equation, the low-field mobility is…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.115319-1-7. ⟨10.1103/PhysRevB.82.115319⟩. ⟨hal-00549040⟩

• Article dans une revue

On the physical origin of conical bubble structure under an ultrasonic horn

Bertrand Dubus, C. Vanhille, C. Campos-Pozuelo, C. Granger

Ultrasonics Sonochemistry, 2010, 17, pp.810-818. ⟨10.1016/j.ultsonch.2010.03.003⟩. ⟨hal-00548559⟩

• Article dans une revue

New magnetic micro-actuator design based on PDMS elastomer and MEMS technologies for tactile display

J. Streque, Abdelkrim Talbi, Philippe Pernod, Vladimir Preobrazhensky

IEEE Transactions on Haptics (ToH), 2010, 3, pp.88-97. ⟨10.1109/TOH.2009.61⟩. ⟨hal-00548961⟩