Publications

• Article dans une revue

Neutron irradiation effects on the electrical properties of previously electrically stressed AlInN/GaN HEMTs

Y. Guhel, J. Trolet, P. Mary, Christophe Gaquière, B. Boudart, Sébastien Petitdidier

This paper analyses the neutron irradiation impact on the electrical performances of unstressed, on-state, off-state and Negative Gate Bias (NGB) stressed AlInN/GaN HEMTs. These irradiations have resulted in the creation of electron traps that are causing a decrease in the drain current and an…

IEEE Transactions on Nuclear Science, 2019, 66 (5), pp.810 - 819. ⟨10.1109/TNS.2019.2908055⟩. ⟨hal-02117222⟩

• Article dans une revue

Modeling the Electroelastic Moduli of Porous Textured Piezoceramics

Antoine Balé, Rémi Rouffaud, Anne-Christine Hladky, Franck Levassort, Pascal Marchet

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2019, 66 (5), pp.949-957. ⟨10.1109/TUFFC.2019.2898519⟩. ⟨hal-02113684⟩

• Communication dans un congrès

Contrôle non destructif d’une structure à partir d’un capteur bi-statique micro-ondes embarqué sur robots mobiles collaboratifs

Bilal Daass, Adem Rouibah, Kamel Haddadi, Denis Pomorski

XXIèmes Journées Nationales Microondes (IEEE), May 2019, Caen, France. ⟨hal-02435636⟩

• Article dans une revue

Composition modulation by twinning in InAsSb nanowires Composition modulation by twinning in InAsSb nanowires

M. Schnedler, T Xu, V Portz, J-P Nys, S.R. Plissard, Maxime Berthe, H Eisele, R E Dunin-Borkowski, P Ebert, B. Grandidier

We observe a composition modulated axial heterostructure in zincblende (ZB) InAs 0.90 Sb 0.10 nanowires initiated by pseudo-periodic twin boundaries using scanning tunneling microscopy. The twin boundaries exhibit four planes with reduced Sb concentration due to a lower Sb incorporation during…

Nanotechnology, 2019, 30 (32), ⟨10.1088/1361-6528/aaf9ce⟩. ⟨hal-02332273⟩

• Article dans une revue

Efficient oil/water separation by superhydrophobic CuxS coated on copper mesh

Maryam Khosravi, Saeid Azizian, Rabah Boukherroub

Separation and Purification Technology, 2019, 215, pp.573-581. ⟨10.1016/j.seppur.2019.01.039⟩. ⟨hal-02373197⟩

• Article dans une revue

Importance of point defect reactions for the atomic-scale roughness of III-V nanowire sidewalls

Adrian Díaz Álvarez, Nemanja Peric, Nathali Alexandra Franchina Vergel, Jean-Philippe Nys, Maxime Berthe, Gilles Patriarche, Jean-Christophe Harmand, Philippe Caroff, S.R. Plissard, Philipp Ebert, Tao Xu, B. Grandidier

The surface morphology of III-V semiconductor nanowires (NWs) protected by an arsenic cap and subsequently evaporated in ultrahigh vacuum is investigated with scanning tunneling microscopy and scanning transmission electron microscopy. We show that the changes of the surface morphology as a…

Nanotechnology, 2019, 30 (32), pp.324002. ⟨10.1088/1361-6528/ab1a4e⟩. ⟨hal-02332261⟩

• Communication dans un congrès

A new memory reliability technique for multiple bit upsets mitigation

Alexandre Chabot, Ihsen Alouani, Smail Niar, Reda Nouacer

Technological advances make it possible to produce increasingly complex electronic components. Nevertheless, these advances are convoyed by an increasing sensitivity to operating conditions and an accelerated aging process. In safety critical applications, it is vital to provide solutions to avoid…

16th ACM International Conference on Computing Frontiers, Apr 2019, Alghero, Italy. pp.145-152, ⟨10.1145/3310273.3321564⟩. ⟨hal-03522687⟩

• Article dans une revue

Measured Words: Computation and Writing in Renaissance Italy [Book Review]

Raffaele Pisano

The Mathematical Intelligencer, 2019, 41 (3), pp.82-86. ⟨10.1007/s00283-019-09887-7⟩. ⟨hal-04509259⟩

• Communication dans un congrès

Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects

Riad Kabouche, Idriss Abid, Malek Zegaoui, Kai Cheng, F Medjdoub

We report on the first demonstration of low trapping effects up to 3000 V within GaN-on-silicon epitaxial layers using a local substrate removal (LSR) followed by a thick backside ultra-wide-bandgap AlN deposition. The fabricated AlGaN/GaN devices deliver low specific on-resistance below 10 mΩcm 2…

International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Apr 2019, Minneapolis, United States. ⟨hal-02356891⟩

• Communication dans un congrès

Study of a dual longitudinal and shear acoustic wave ZnO transducer in the gigahertz frequency range: application to viscosity measurement and first step for device integration

Hatem Dahmani, Julien Carlier, Ibrahim Zaaroura, Malika Toubal, Pierre Campistron, Bertrand Nongaillard

In this paper, we study a high frequency (~1GHz) ZnO transducer integrated within a silicon substrate, which generates in the same area, a compressional and a shear acoustic wave. These two kinds of waves can be used to characterize fluid-solid interfaces' properties in the same microscopic…

IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS 2019), Apr 2019, Gammarth-Tunis, Tunisia. pp.1-6, ⟨10.1109/DTSS.2019.8914906⟩. ⟨hal-03582214⟩