Publications

Affichage de 10061 à 10070 sur 16058

ART

Charged impurity scattering and mobility in gated silicon nanowires

M.P. Persson, H. Mera, Y.M. Niquet, C. Delerue, M. Diarra

We study the effects of charged impurity scattering on the electronic transport properties of h110i-oriented Si nanowires in a gate-all-around geometry, where the impurity potential is screened by the gate, gate oxide and conduction band electrons. The electronic structure of the doped nanowires is…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82 (11), pp.115318. ⟨10.1103/PhysRevB.82.115318⟩. ⟨hal-00549048⟩

ART

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, Didier Theron, Christophe Gaquière, M.A. Poisson, S. Delage, P. Pristawko, C. Skierbiszewski

We report on room temperature terahertz generation by a submicron size AlGaN/GaN-based high electron mobility transistors. The emission peak is found to be tunable by the gate voltage between 0.75 and 2.1 THz. Radiation frequencies correspond to the lowest fundamental plasma mode in the gated…

Journal of Applied Physics, 2010, 107 (2), pp.024504. ⟨10.1063/1.3291101⟩. ⟨hal-00549452⟩

COMM

Slow-wave shielded coplanar striplines for UWB filtering applications

M. Abdelaziz, Florence Podevin, A. Safwat, Anne-Laure Franc, Emmanuel Pistono, N. Corrao, A. Vilcot, P. Ferrari

Slow-wave shielded coplanar striplines for UWB filtering applications, Dec 2009, New Delhi, India. ⟨hal-00602887⟩

THESE

Study of electronic properties of nanostructures by ultrahigh vacuum atomic force microscopy, Étude de propriétés électroniques de nanostructures par microscopie à force atomique sous ultra-vide

Lukasz Borowik

We study the electronic properties of nanostructures using atomic force microscopy in ultra-high vacuum environment. The first part of this work consists in the characterization of silicon nanowires grown by metal-catalyzed chemical vapour deposition on silicon substrates, using conducting atomic…, Cette thèse est consacrée à l'étude des propriétés électroniques de nanostructures par microscopie à force atomique (AFM) en ultra-vide. La première partie de ce travail a consisté à caractériser localement des nanofils de silicium par technique d'AFM conducteur. Les expériences de…

Physics [physics]. Université des Sciences et Technologie de Lille - Lille I, 2009. English. ⟨NNT : ⟩. ⟨tel-00466670⟩

PATENT

Microelectromechanical System Comprising a Deformable Portion and a Stress Sensor

S. Arscott

United States, Patent n° : US20090301176A1. 2009. ⟨hal-02345851⟩

PATENT

Strain sensor with high gauge factor

A. Rowe, C. Renner, S. Arscott

Patent n° : EP2131169 (A1). 2009. ⟨hal-00455322⟩

ART

Optically active defects in an InAsP/InP quantum well monolithically grown on SrTiO3(001)

Jinquan Cheng, Thomas Aviles, Ahiram El Akra, C. Bru-Chevallier, Ludovic Largeau, Gilles Patriarche, Philippe Regreny, A. Benamrouche, Y. Robach, Guy Hollinger, Guillaume Saint-Girons

The optical properties of an InAsP/InP quantum well grown on a SrTiO3(001) substrate are analyzed. At 13 K, the photoluminescence yield of the well is comparable to that of a reference well grown on an InP substrate. Increasing the temperature leads to the activation of nonradiative mechanisms for…

Applied Physics Letters, 2009, 95 (23), ⟨10.1063/1.3273850⟩. ⟨hal-01901801⟩