Publications

Affichage de 10101 à 10110 sur 16175


  • Communication dans un congrès

Ginzburg Landau description of metastable vortices : static and dynamic properties

Laurent Baudry, Anaïs Sené, Igor A. Luk'Yanchuk, Laurent Lahoche

19th International Symposium on the Applications of Ferroelectrics, 10th European Conference on the Applications of Polar Dielectrics, ISAF-ECAPD 2010, 2010, Edinburgh, Scotland, United Kingdom. ⟨hal-00574445⟩

  • Communication dans un congrès

Design of waveguides in silicon phoxonic crystal slabs

Vincent Laude, J. C. Beugnot, Sarah Benchabane, Yan Pennec, Bahram Djafari-Rouhani, N. Papanikolaou, Alejandro Martinez

We consider the problem of designing waveguides in nanostructures presenting simultaneously phononic and photonic band gaps. We specifically opt for designs in perforated silicon membranes that can be conveniently obtained using silicon-on- insulator technology. Geometrical parameters for…

IEEE International Ultrasonics Symposium, Oct 2010, San Diego, CA, United States. pp.527-530, ⟨10.1109/ULTSYM.2010.5935703⟩. ⟨hal-00541910⟩

  • Article dans une revue

Electron beam nanolithography in AZnLOF 2020

E. Herth, P. Tilmant, M. Faucher, M. François, Christophe Boyaval, Francois Vaurette, Y. Deblock, Bernard Legrand, L. Buchaillot

Microelectronic Engineering, 2010, 87, pp.2057-2060. ⟨10.1016/j.mee.2009.12.079⟩. ⟨hal-00548989⟩

  • Article dans une revue

The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors

C. Thelander, K.A. Dick, M.T. Borgström, L.E. Fröberg, P. Caroff, H.A. Nilsson, L. Samuelson

Nanotechnology, 2010, 21, pp.205703-1-9. ⟨10.1088/0957-4484/21/20/205703⟩. ⟨hal-00548956⟩

  • Article dans une revue

Influence of the selectively implanted collector integration on 400 GHz fmax Si/SiGe:C HBTs

Thomas Lacave, Pascal Chevalier, Yves Campidelli, Linda Depoyan, Ludovic Berthier, Frédéric André, Michel Buczko, Gregory Avenier, Christophe Gaquière, Alain Chantre

Optimization of SiGe HBT performances towards very high cut-off frequencies fT and fMAX requires high collector doping level together with low collector/base junction capacitance CBC. This compromise is usually achieved by localizing a dedicated collector implant (so-called SIC implant) under the…

ECS Transactions, 2010, 33 (6), pp.331-335. ⟨10.1149/1.3487563⟩. ⟨hal-00550006⟩

  • Communication dans un congrès

Cognitive cooperation for the downlink of frequency reuse small cells

S. Akoum, Marie Zwingelstein, R.W. Heat, M. Debbah

2nd International Workshop on Cognitive Information Processing, CIP2010, 2010, Italy. pp.111-115, ⟨10.1109/CIP.2010.5604251⟩. ⟨hal-00575684⟩

  • Chapitre d'ouvrage

Molecular electronics based on self-assembled monolayers

D. Vuillaume

Narlikar A., Fu Y. Oxford handbook of nanoscience and nanotechnology. Applications, Oxford University Press, vol. III, chap. 9, pp. 312-342, 2010. ⟨hal-00575836⟩