Publications

• COMM

Terahertz imaging using high electron mobility transistors as plasma wave detectors

S. Nadar, D. Coquillat, M. Sakowicz, H. Videlier, F. Teppe, N. Dyakonova, W. Knap, J.-M. Peiris, J. Lyonnet, D. Seliuta, I. Kasalynas, G. Valusis, K. Madjour, Didier Theron, Christophe Gaquière, M.-A. Poisson

Two experiments demonstrate that high electron mobility transistors (HEMTs) are well suited for terahertz (THz) imaging. We have shown that HEMTs can be effectively used as plasma wave detectors in a THz imaging system at frequencies higher than 1 THz at room temperature and this device are…

15th International Semiconducting and Insulating Materials Conference (SIMC-XV) Vilnius Univ, Vilnius, LITHUANIA, Jun 2009, Lithuania. pp.2855-2857, ⟨10.1002/PSSC.200982532⟩. ⟨hal-00545979⟩

• ART

Impact of drops on non-wetting biomimetic surfaces

Alain Merlen, Philippe Brunet

We have carried out an experimental study of liquid drop impact on superhydrophobic substrates covered by a carpet of chemically coated nano-wires. The micro-structure of the surface is similar to some biological ones (Lotus leaf for example). In this situation the contact angle can then be…

Journal of Bionic Engineering, 2009, 6, pp.330-334. ⟨10.1016/S1672-6529(08)60141-9⟩. ⟨hal-00469670⟩

• COMM

Kelvin probe force microscopy of charge transfer mechanisms from doped silicon nanocrystals

Lukasz Borowik, Koku Kusiaku, D. Deresmes, Didier Theron, Heinrich Diesinger, Thierry Melin, Thuat Nguyen-Tran, Pere Roca I Cabarrocas

The introduction of impurities in semiconductor nanocrystals is of fundamental interest to control their optical, electrical and magnetic properties[1]. Doping is essential to basically enhance electrical conductivity, and to build functional devices. This issue becomes of prime interest at the…

Materials Research Society Fall Meeting, MRS Fall 2009, Symposium OO : Dynamic Scanning Probes - Imaging, Characterization, and Manipulation, Nov 2009, Boston, MA, United States. ⟨hal-00575344⟩

• COMM

A history of physics. Galileo Galilei’s Trattato di Fortificazione

Raffaele Pisano

A history of physics. Galileo Galilei’s Trattato di Fortificazione, 24th November, Centre François Viète, University of Nantes, Nov 2009, Nantes, Centre François Viète, France. ⟨hal-04518874⟩

• PATENT

Dispositif et procédé de réflectométrie multiporteuse pour le diagnostic en ligne d'au moins une ligne de transmission

A. Lelong, M. Olivas

N° de brevet: FR2931323 (A1). 2009. ⟨hal-00434366⟩

• ART

Process Optimization and Downscaling of a Single Electron Single Dot Memory

Christophe Krzeminski, Xiaohui Tang, Nicolas Reckinger, Vincent Bayot, Emmanuel Dubois

This paper presents the process optimization of a single-electron nanoflash electron memory. Self-aligned single dot memory structures have been fabricated using a wet anisotropic oxidation of a silicon nanowire. One of the main issue was to clarify the process conditions for the dot formation.…

IEEE Transactions on Nanotechnology, 2009, 8 (9), pp.737-748. ⟨10.1109/TNANO.2009.2021653⟩. ⟨hal-00601623⟩

• PATENT

Integrated circuit and corresponding method of processing a multitype radio frequency digital signal

A. Cathelin, A. Flament, A. Kaiser

Patent n° : WO2009138635 (A1). 2009. ⟨hal-00451474⟩

• ART

A single layer hydrogen silsesquioxane (HSQ) based lift-off process for germanium and platinum

Vikram Passi, Aurélie Lecestre, Christophe Krzeminski, Guilhem Larrieu, Emmanuel Dubois, Jean-Pierre Raskin

Primarily used as etch mask, single layer hydrogen silsesquioxane has never been investigated for lift-off technique. In this article, we propose a new technique where a single layer of hydrogen silsesquioxane, a negative tone electron beam resist, is used to make lift-off of germanium and platinum…

Microelectronic Engineering, 2009, 87 (10), pp.1872-1878. ⟨10.1016/j.mee.2009.11.022⟩. ⟨hal-00625915⟩

• COMM

Tunable room temperature terahertz sources based on two dimensional plasma instability in GaN HEMTs

A. El Fatimy, T. Suemitsu, T. Otsuji, N. Dyakonova, W. Knap, Y. M. Meziani, S. Vandenbrouk, K. Madjour, Didier Theron, Christophe Gaquière, P. Prystawko, C. Skierbiszewski

In this work, we report on room temperature terahertz radiation from sub-micron size GaN/AlGaN based high electron mobility transistors (HEMTs). They could successfully replace the standard Fourier Transform spectrometer source and were investigated with a standard Si-bolometer as a detector. The…

16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 16), Aug 2009, France. pp.2072, ⟨10.1088/1742-6596/193/1/012072⟩. ⟨hal-00546387⟩

• ART

A batch-fabricated and electret-free silicon electrostatic vibration energy harvester

Philippe Basset, Dimitri Galayko, Ayyaz Mahmood Paracha, Frédéric Marty, Andrii Dudka, Tarik Bourouina

This paper presents a novel silicon-based and batch-processed MEMS electrostatic transducer for harvesting and converting the energy of vibrations into electrical energy without using an electret layer. Effective conversion from the mechanical-to-electric domains of 61 nW on a 60 MΩ resistive load…

Journal of Micromechanics and Microengineering, 2009, 19 (11), pp.115025. ⟨10.1088/0960-1317/19/11/115025⟩. ⟨hal-01653633⟩