Publications

• Article dans une revue

Two-dimensional phononic crystal with tunable narrow pass band: Application to a waveguide with selective frequency

A. Khelif, P. Deymier, Bahram Djafari-Rouhani, Jerome O. Vasseur, L. Dobrzynski

Journal of Applied Physics, 2003, 94 (3), pp.1308-1311. ⟨10.1063/1.1557776⟩. ⟨hal-03302149⟩

• Article dans une revue

Measurements and calculations of the sound attenuation by a phononic band gap structure suitable for an insulating partition application

Jerome O. Vasseur, C. Goffaux, F. Maseri, J. Vasseur, Bahram Djafari-Rouhani, Ph. Lambin

Applied Physics Letters, 2003, 83 (2), pp.281-283. ⟨10.1063/1.1592016⟩. ⟨hal-03302159⟩

• Communication dans un congrès

Electro-optical Probe dedicated to the On-line Testing of Electronic Systems

B. Pannetier, Pierre Lemaitre-Auger, S. Tedjini, El Hadj Dogheche, Denis Remiens

Conference on Lasers and Electro-Optics, Jul 2003, Munich, Germany. pp.000-001. ⟨hal-00261722⟩

• Article dans une revue

Transmission and dispersion relations of perfect and defect-containing waveguide structures in phononic band gap materials

A. Khelif, Bahram Djafari-Rouhani, Jerome O. Vasseur, P. Deymier

Physical Review B, 2003, 68 (2), ⟨10.1103/PhysRevB.68.024302⟩. ⟨hal-03302151⟩

• Article dans une revue

Carrier mobility versus carrier density in Al x Ga 1 − x N / G a N quantum wells

J.-L. Farvacque, Z. Bougrioua

Experimental measurements show that, in AlxGa1−xN/GaN triangular quantum wells, the free-carrier mobility experiences a strong decrease with increasing carrier density. A theoretical analysis of the various scattering mechanisms that can explain such a behavior is presented. It shows that, even…

Physical Review B, 2003, 68 (3), ⟨10.1103/PhysRevB.68.035335⟩. ⟨hal-02906527⟩

• Article dans une revue

Improved AlGaN/GaN high electron mobility transistor using AlN interlayers

A. Jimenez, Z. Bougrioua, J. Tirado, A. Braña, E. Calleja, E. Munoz, I. Moerman

This work reports on the effects of AlN interlayers embedded into the GaN semi-insulating buffer of AlGaN/GaN high electron mobility transistors, in comparison with standard heterostructures without AlN interlayers. Detailed optical and structural characterization data are presented, along with…

Applied Physics Letters, 2003, 82 (26), pp.4827-4829. ⟨10.1063/1.1588379⟩. ⟨hal-02906528⟩

• Communication dans un congrès

Volta’s Pile and Carnot’s Cycle

Raffaele Pisano

XXIII SISFA International Congress of the history of physics and Astronomy, 5-7 June, SISFA & Department of Physics, University of Bari, Jun 2003, Bari (Italy), Italy. ⟨hal-04519689⟩

• Pré-publication, Document de travail

Molecular rectifying diodes from self-assembly on silicon

Stéphane Lenfant, Christophe Krzeminski, Christophe Delerue, Guy Allan, Dominique Vuillaume

We demonstrate a molecular rectifying junction made from a sequential self-assembly on silicon. The device structure consists of only one conjugated (p) group and an alkyl spacer chain. We obtain rectification ratios up to 37 and threshold voltages for rectification between -0.3V and -0.9V. We show…

2003. ⟨hal-00000385⟩

• Communication dans un congrès

Impulsive noise on indoor power lines: characterization and mitigation of its effect on PLC systems

Virginie Degardin, M. Lienard, Pierre Degauque, A. Zeddam, F. Gauthier

Intensive measurements of impulsive noise have been carried out on indoor power lines. From this approach, various types of transients are classified and a stochastic noise model is deduced from the statistical analysis of their main characteristics. A power line communication, based on an OFDM…

2003 IEEE International Symposium on Electromagnetic Compatibility, 2003. EMC '03., May 2003, Istanbul, Turkey. pp.166-169 Vol.1, ⟨10.1109/ICSMC2.2003.1428221⟩. ⟨hal-03514977⟩

• Article dans une revue

Directional photon transfer between two wires

L. Dobrzynski, Abdellatif Akjouj, Bahram Djafari-Rouhani, Jerome O. Vasseur, Mohamed Bouazaoui, Jean-Pierre Vilcot, Arnaud Beaurain, Stefan Mc Murtry

The directional transfer of a single photon from one wire to another, leaving all other neighbor states unaffected, is of great importance. We present a simple coupling structure that makes such transfer possible, for any given photon wavelength and linewidth. We give closed-form expressions for…

Physical Review E , 2003, 67 (5), pp.057603/1-4. ⟨10.1103/PhysRevE.67.057603⟩. ⟨hal-03302158⟩