Publications

• COUV

Characterization of surface cracks in metals by microwave techniques

D. Glay, T. Lasri

GREEN R.E. JR., DJORDJEVIC B.B., HENTSCHEL M.P. Nondestructive characterization of materials XI, Springer Verlag, pp.345-352, 2003. ⟨hal-00132310⟩

• COMM

Les Interconnexions cuivre sont-elles un verrou technologique majeir pour les circuits ULSI du futur utilisant la technologie ultime ? Analyse électromagnétique et performances

K. El Bouazzati, Jean-François Legier, Erick Paleczny, Christophe Seguinot, Denis Deschacht

Telecom et JFMMA, 2003, Marrakech, Maroc. ⟨lirmm-00269827⟩

• COMM

Sub 0.1 µm – InP based HEMTs for high power and high frequency

D. Theron, F Medjdoub, M. Zaknoune, X. Wallart, F. Dessenne, R. Fauquembergue, Jean-Claude de Jaeger

Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2003, 2003, Atlanta, GA, United States. ⟨hal-00146719⟩

• ART

Realization of waveguiding epitaxial GaN layers on Si by low-pressure metalorganic vapor phase epitaxy

H.P.D. Schenk, E. Feltin, M. Laugt, O. Tottereau, P. Vennegues, El Hadj Dogheche

Applied Physics Letters, 2003, 83, pp.5139-5141. ⟨hal-00162728⟩

• OTHER

Dispositifs optoélectroniques basés sur des matériaux organiques : conception, fabrication et caractérisation

M. Berliocchi

2003. ⟨hal-00162731⟩

• OTHER

Etude et réalisation d'un système radar coopératif destiné aux systèmes de transports guidés

B. Fremont

2003. ⟨hal-00162744⟩

• COMM

Modélisation d'Interconnexions Cuivre Submicroniques VLSI en Présence des Niveaux Environnants à Pertes

K. El Bouazzatti, Jean-François Legier, Erick Paleczny, Christophe Seguinot, Denis Deschacht

13èmes Journées Nationales Microondes, May 2003, Lille, France. ⟨lirmm-00269550⟩

• ART

Low frequency drain noise comparison of AlGaN/GaN HEMTs grown on silicon, SiC and sapphire substrates

A. Curutchet, N. Malbert, N. Touboul, Christophe Gaquière, A. Minko, M. Uren

Microelectronics Reliability, 2003, 43, pp.1713-1718. ⟨hal-00146665⟩

• ART

Optical transitions in few-electron artificial atoms strongly confined in ZnO nanocrystals

Alexander Germeau, Aarnoud L. Roest, Daniel Vanmaekelbergh, Guy Allan, Christophe Delerue, Eric A. Meulenkamp

We have studied the optical transitions in artificial atoms consisting of one to ten electrons occupying the conduction levels in ZnO nanocrystals. We analyzed near IR absorption spectra of assemblies of weakly coupled ZnO nanocrystals for a gradually increasing electron number and found four…

Physical Review Letters, 2003, 90, pp.097401/1-4. ⟨10.1103/PhysRevLett.90.097401⟩. ⟨hal-00146610⟩

• ART

About the measurements of the d33 piezoelectric coefficient of the PZT film-Si/SiO2/Ti/Pt substrates using an optical cryostat

J. Nosek, L. Burianova, M. Sulc, Caroline Soyer, Eric Cattan, Denis Remiens

Ferroelectrics, 2003, 292, pp.103-109. ⟨hal-00146464⟩