Publications

• Communication dans un congrès

Electro-optical Probe dedicated to the On-line Testing of Electronic Systems

B. Pannetier, Pierre Lemaitre-Auger, S. Tedjini, El Hadj Dogheche, Denis Remiens

Conference on Lasers and Electro-Optics, Jul 2003, Munich, Germany. pp.000-001. ⟨hal-00261722⟩

• Article dans une revue

Transmission and dispersion relations of perfect and defect-containing waveguide structures in phononic band gap materials

A. Khelif, Bahram Djafari-Rouhani, Jerome O. Vasseur, P. Deymier

Physical Review B, 2003, 68 (2), ⟨10.1103/PhysRevB.68.024302⟩. ⟨hal-03302151⟩

• Article dans une revue

Improved AlGaN/GaN high electron mobility transistor using AlN interlayers

A. Jimenez, Z. Bougrioua, J. Tirado, A. Braña, E. Calleja, E. Munoz, I. Moerman

This work reports on the effects of AlN interlayers embedded into the GaN semi-insulating buffer of AlGaN/GaN high electron mobility transistors, in comparison with standard heterostructures without AlN interlayers. Detailed optical and structural characterization data are presented, along with…

Applied Physics Letters, 2003, 82 (26), pp.4827-4829. ⟨10.1063/1.1588379⟩. ⟨hal-02906528⟩

• Communication dans un congrès

Volta’s Pile and Carnot’s Cycle

Raffaele Pisano

XXIII SISFA International Congress of the history of physics and Astronomy, 5-7 June, SISFA & Department of Physics, University of Bari, Jun 2003, Bari (Italy), Italy. ⟨hal-04519689⟩

• Pré-publication, Document de travail

Molecular rectifying diodes from self-assembly on silicon

Stéphane Lenfant, Christophe Krzeminski, Christophe Delerue, Guy Allan, Dominique Vuillaume

We demonstrate a molecular rectifying junction made from a sequential self-assembly on silicon. The device structure consists of only one conjugated (p) group and an alkyl spacer chain. We obtain rectification ratios up to 37 and threshold voltages for rectification between -0.3V and -0.9V. We show…

2003. ⟨hal-00000385⟩

• Brevet

Procédé de réglage de l'écartement de deux éléments mécaniques d'une structure micromécanique sensiblement plane et résonateur électromécanique correspondant

A. Kaiser, D. Galayko, D. Collard

N° de brevet: FR2832270 (A1). 2003. ⟨hal-00372464⟩

• Brevet

Composant monolithique electro-optique multisections

F. Mallecot, C. Chaumont, J. Jacquet, A. Leroy, A. Plais, Joseph Harari, Didier Decoster

N° de brevet: FR2832223 (A1). 2003. ⟨hal-00372467⟩

• Communication dans un congrès

Impulsive noise on indoor power lines: characterization and mitigation of its effect on PLC systems

Virginie Degardin, M. Lienard, Pierre Degauque, A. Zeddam, F. Gauthier

Intensive measurements of impulsive noise have been carried out on indoor power lines. From this approach, various types of transients are classified and a stochastic noise model is deduced from the statistical analysis of their main characteristics. A power line communication, based on an OFDM…

2003 IEEE International Symposium on Electromagnetic Compatibility, 2003. EMC '03., May 2003, Istanbul, Turkey. pp.166-169 Vol.1, ⟨10.1109/ICSMC2.2003.1428221⟩. ⟨hal-03514977⟩

• Communication dans un congrès

Comparaison des performances d'une antenne Vivaldi et d'un réseau de fentes imprimées à 94GHz

B. D. Nguyen, Claire Migliaccio, Christian Pichot, N. Rolland, K. Vanoverschelde, K. Yamamoto, N. Yonemoto, K. Yamada

13èmes Journées Nationales Microondes (JNM 2003), May 2003, Lille, France. pp.77-78. ⟨hal-00984136⟩

• Article dans une revue

AlGaN/GaN HEMTS: material, processing, and characterization

F. Calle, T. Palacios, E. Monroy, J. Grajal, M. Verdu, Zahia Bougrioua, Ingrid Moerman

The growth of AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire by metal organic vapor phase epitaxy (MOVPE) is described, with special emphasis on procedures to reduce dislocation density. All the processing steps involved in the fabrication of nitride-based HEMTs have been…

Journal of Materials Science: Materials in Electronics, 2003, 14 (5/7), pp.271-277. ⟨10.1023/A:1023951323307⟩. ⟨hal-02906523⟩