Publications

• Communication dans un congrès

LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide

Marie-Antoinette Di Forte-Poisson, Maurice Tordjman, A. Romann, M. Magis, Raphaël Aubry, Sylvain Laurent Delage, J. Di Persio, B. Grimbert, Christophe Gaquière

Proceedings of the Fifth International Conference on Nitride Semiconductors, ICNS-5, 2003, Nara, Japan. ⟨hal-00146685⟩

• Communication dans un congrès

HEMT technology for power applications at 94 GHz and above

F Medjdoub, M. Zaknoune, X. Wallart, F. Dessenne, Jean-Claude de Jaeger, D. Theron

12th European Workshop on Heterostructure Technology, heTech 2003, 2003, San Rafael, Spain. ⟨hal-00146695⟩

• Article dans une revue

Microscopic modeling of nonlinear transport in ballistic nanodevices

J. Mateos, B.G. Vasallo, D. Pardo, J.S. Galloo, S. Bollaert, Yannick Roelens, A. Cappy

IEEE Transactions on Electron Devices, 2003, 50, pp.1897-1905. ⟨hal-00145980⟩

• Article dans une revue

Ballistic nanodevices for terahertz data processing : Monte Carlo simulations

J. Mateos, B.G. Vasallo, D. Pardo, T. Gonzales, Yannick Roelens, S. Bollaert, A. Cappy

Nanotechnology, 2003, 14, pp.117-122. ⟨hal-00145979⟩

• Communication dans un congrès

Etude et optimisation de commutateurs DOS à haute diaphotie sur InP

Malek Zegaoui, Joseph Harari, V. Magnin, Didier Decoster

22èmes Journées Nationales d'Optique Guidée, JNOG 2003, Nov 2003, Valence, France. ⟨hal-00146563⟩

• Article dans une revue

Strain determination in silicon microstructures by combined TEM/CBED, process simulation and micro-Raman spectroscopy

V. Senez, A. Armigliato, I. de Wolf, G. Carnevale, R. Balboni, S. Frabboni, A. Benedetti

Test structures consisting of shallow trench isolation (STI) structures are fabricated using advanced silicon (Si) technology. Different process parameters and geometrical features are implemented to investigate the residual mechanical stress in the structures. A technology computer aided design…

Journal of Applied Physics, 2003, 94 (9), pp.5574-5583. ⟨10.1063/1.1611287⟩. ⟨hal-00146408⟩

• Communication dans un congrès

Fabrication of nano-ballistic devices using high resolution process

Emmanuelle Pichonat, Jean-Sebastien Galloo, Yannick Roelens, S. Bollaert, X. Wallart, A. Cappy, Javier Mateos, Tomás González, Hervé Boutry, Vincent Bayot, Lukasz Bednarz

Trends in NanoTechnology, TNT 2003, Sep 2003, Salamanca, Spain. ⟨hal-00146012⟩

• Communication dans un congrès

Nonlinear electron transport in InGaAs/InAlaS ballistic devices

Benoit Hackens, L. Gence, Sébastien Faniel, Cédric Gustin, Hervé Boutry, Lukasz Bednarz, Isabelle Huynen, Vincent Bayot, X. Wallart, A. Cappy, Javier Mateos, Tomás González

Trends in NanoTechnology, TNT 2003, Sep 2003, Salamanca, Spain. ⟨hal-00146041⟩

• Communication dans un congrès

Finite volume methods for wave phase conjugation in active media

A. Merlen, P. Voinovitch, Vladimir Preobrazhensky, Philippe Pernod

6th International Conference on Mathematical and Numerical Aspects of Wave Propagation, WAVES 2003, 2003, Finland. pp.765-769. ⟨hal-00250177⟩

• Article dans une revue

Wave-mechanical calculations of leakage current through stacked dielectrics for nanotransistor Metal-Oxide-Semiconductor design

M. Le Roy, Eric Lheurette, O. Vanbésien, D. Lippens

Journal of Applied Physics, 2003, 93, pp.2966-2971. ⟨hal-00146086⟩