Publications

• Communication dans un congrès

Electron-beam-induced reactivation of Si dopants in hydrogenated 2D AlGaAs heterostructures : a possible new route of fabricating III-V nanostructures

L. Kurowski, D. Bernard-Loridant, E. Constant, Didier Decoster

2004, pp.S127-S132. ⟨hal-00141184⟩

• Article dans une revue

Coupling of atom-by-atom calculations of extended defects with B kick-out equations : application to the simulation of boron TED

E. Lampin, Fuccio Cristiano, Y. Lamrani, B. Colombeau

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216, pp.95-99. ⟨hal-00140975⟩

• Communication dans un congrès

AC-only RF-ID tags for barcode replacement

S. Briole, C. Pacha, K. Goser, A. Kaiser, R. Thewes, W. Weber, R. Brederlow

2004, pp.438-537. ⟨hal-00140988⟩

• Communication dans un congrès

Acoustic wave propagation in functionally graded material (FGM) cylinders

L. Elmaimouni, Jean-Etienne Lefebvre, Tadeusz Gryba, V. Zhang

2004, pp.1199-1200. ⟨hal-00142049⟩

• Communication dans un congrès

Systems conception and adaptative calibration technique for S-parameters measurement at 35 GHz

Kamel Haddadi, M. Maazi, D. Glay, T. Lasri

2004, pp.Session 4A. ⟨hal-00142280⟩

• Communication dans un congrès

Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement

Jean-Claude Jacquet, Raphaël Aubry, H. Gerard, E. Delos, Nathalie Rolland, Yvon Cordier, A. Bussutil, Michel Rousseau, Sylvain Laurent Delage

GaN and its related alloys constitute a family of wide bandgap semiconductors suitable to optoelectronics and power microwave applications. For the latter applications, their high breakdown fields in the 3MV/cm range and their high peak electron velocity above 107cm/s are crucial. The high electron…

12th European Gallium Arsenide and other compound semiconductors application symposium, Oct 2004, Amsterdam, Netherlands. pp.235-238. ⟨hal-00142308⟩

• Communication dans un congrès

Amélioration des performances des HEMTs AlGaN/GaN sur substrat Si

A. Minko, Virginie Hoel, Christophe Gaquière, D. Theron, Jean-Claude de Jaeger, Y. Cordier, F. Semond, F. Natali, J. Massies, H. Lareche, L. Wedzikowski, R. Langer, P. Bove

GDR Grand Gap, 2004, Fréjus, France. ⟨hal-00141966⟩

• Communication dans un congrès

Nonlinear noise modeling in FETs for the design of low noise active mixers

Francois Danneville

IEEE MTT-S International Microwave Symposium, Workshop on System-Level Measurement, Modelling, and Design Issues of Mixers, 2004, Fort Worth, TX, United States. ⟨hal-00133911⟩

• Communication dans un congrès

Noise modeling and performance of SOI MOSFETs

Francois Danneville, G. Pailloncy, B. Iniguez, J.P. Raskin, Gilles Dambrine

IEEE MTT-S International Microwave Symposium, Workshop on High Frequency Noise in Advanced Silicon-based Devices : From Basics to State-of-the-Art Device and Circuit Performances, 2004, Fort Worth, TX, United States. ⟨hal-00133912⟩

• Article dans une revue

Prediction of the reflection coefficient of shallow buried objects by a microwave technique

Latifa Achrait-Furlan, T. Lasri, Ahmed Mamouni

In this paper, we propose a low-cost microwave technique to characterize shallow subsurface objects. Experiments and simulations are carried out to explore the possibility of predicting the reflection coefficient, according to one or two dimensions, of buried structures. High and low contrasts…

Microwave and Optical Technology Letters, 2004, 42, pp.335-339. ⟨hal-00133925⟩