Publications

• Article dans une revue

Second-order sound field during megasonic cleaning of patterned silicon wafers: Application to ridges and trenches

Jerome O. Vasseur, P. Deymier, J. Vasseur, A. Khelif, S. Raghavan

Journal of Applied Physics, 2001, 90 (8), pp.4211-4218. ⟨10.1063/1.1398595⟩. ⟨hal-03302022⟩

• Article dans une revue

Electron-phonon coupling and optical transitions for indirect-gap semiconductor nanocrystals

Christophe Delerue, Guy Allan, Michel Lannoo

We show that it is possible to perform full microscopic calculations of the phonon-assisted and no-phonon radiative transitions in silicon nanocrystals. These are based on a tight-binding Hamiltonian for the electron and electron-phonon part together with a valence force-field model for phonons. We…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 64, pp.193402/1-4. ⟨10.1103/PhysRevB.64.193402⟩. ⟨hal-00152538⟩

• Communication dans un congrès

Advanced Source/Drain Architecture using Very Low Schottky Barriers: Device Design and Material Engineering

Emmanuel Dubois, G. Larrieu

31st European Solid-State Device Research Conference, Sep 2001, Nuremberg, Germany. pp.203-206, ⟨10.1109/ESSDERC.2001.195236⟩. ⟨hal-04248570⟩

• Brevet

MOS transistor for high density integration circuits

Emmanuel Dubois

Australia, Patent n° : AU3748301 (A) 2001-09-03. 2001, N° de priorité : FR20000002237 20000223 - N° de demande : AU20010037483D 20010223. ⟨hal-05696415⟩

• Article dans une revue

Millimeter wave antennas with gaussian radiation patterns

Ronan Sauleau, Philippe Coquet, K. Shinohara, J.P. Daniel, N. Hirose, T. Matsui

IEICE Transactions on Communications, 2001, E84-B (9), 2395-2406 - 12 p. ⟨hal-00557664⟩

• Article dans une revue

Material optimisation for AlGaN/GaN HFET applications

Z. Bougrioua, I. Moerman, N. Sharma, R.H. Wallis, J. Cheyns, K. Jacobs, E.J. Thrush, L. Considine, R. Beanland, J.-L. Farvacque, C. Humphreys

An optimisation of some growth parameters for the epitaxy of AlGaN–GaN based heterostructure field effect transistors (HFET) at low pressure in a new 3x2″ MOVPE reactor is presented. Some possible processes for the growth of semi-insulating buffers have been identified and are described. TEM…

Journal of Crystal Growth, 2001, 230 (3-4), pp.573-578. ⟨10.1016/S0022-0248(01)01303-3⟩. ⟨hal-02906506⟩

• Communication dans un congrès

Antennes millimétriques à faisceau gaussien

Ronan Sauleau, Philippe Coquet, J.P. Daniel

Optique Hertzienne et Diélectriques'01, Sep 2001, Le Mans, France. 217-220 - 4 p. ⟨hal-00557793⟩

• Brevet

MOS transistor for high density integration circuits

Emmanuel Dubois

Unknown Region, Patent n° : WO0163677 (A1) 2001-08-30. 2001, N° de priorité : FR20000002237 20000223 - N° de demande : WO2001FR00532 20010223. ⟨hal-05696414⟩

• Brevet

Transistor MOS pour circuits à haute densité d'intégration

Emmanuel Dubois

France, N° de brevet: FR2805395 (A1) 2001-08-24. 2001, N° de priorité : FR20000002237 20000223 - N° de demande : FR20000002237 20000223. ⟨hal-05696413⟩

• Article dans une revue

Static measurements of GaN MESFETs on (111) Si substrates

Virginie Hoel, Y. Guhel, B. Boudart, Christophe Gaquière, Jean-Claude de Jaeger, H. Lahreche, P. Gibart

For the first time, to the knowledge of the authors, GaN MESFETs on silicon substrate have been realised using low-pressure metal-organic vapour phase epitaxy. The devices demonstrate good pinch-off voltage and good breakdown voltage characteristics. A maximum extrinsic transconductance of 30 mS/mm…

Electronics Letters, 2001, 37 (17), pp.1095 - 1096. ⟨10.1049/el:20010740⟩. ⟨hal-02936047⟩