Publications

Affichage de 6821 à 6830 sur 16058


  • COMM

Thresholdless optical gain using colloidal HgTe nanocrystals

Pieter Geiregat, Arjan Houtepen, Laxmi Kishore Sagar, Christophe Delerue, Dries van Thourhout, Zeger Hens

Conference on Lasers and Electro-Optics, CLEO 2014, Laser Science to Photonic Applications, 2014, San Jose, CA, United States. paper FTh4C.4, 2 p., ⟨10.1364/CLEO_QELS.2014.FTh4C.4⟩. ⟨hal-00974546⟩

  • COMM

Efficient reduction of thermal conductivity in silicon using phononic-engineered membranes

Valeria Lacatena, Maciej Haras, J.F. Robillard, Stéphane Monfray, Thomas Skotnicki, Emmanuel Dubois

Phononic crystals (PC) have been a remarkably active research field for more than two decades [1]. The principle of Bragg reflection on an artificial crystal-like structure leading to additional spectral (band gaps) and refractive (negative refraction, anisotropy) properties is scalable in any…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium D - Phonons and fluctuations in low dimensional structures, 2014, Lille, France. ⟨hal-00964542⟩

  • COMM

Facile routes to acquire single DNA functionalized gold nanoarrays on silicon chip

Ragavendran Sivakumarasamy, Elodie Richard, Christian Slomianny, Dominique Vuillaume, Yannick Coffinier, Nicolas Clément

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium N - Converging technology for nanobio-applications, 2014, Lille, France. ⟨hal-00957802⟩

  • COMM

Design and fabrication of uni-travelling carrier (UTC) photodiode based on InxGa1-xN semiconductors

Bandar Alshehri, Karim Dogheche, P.I. Seetoh, J.H. Teng, S.J. Chua, Didier Decoster, El Hadj Dogheche

This work is focused both on InxGa1-xN single-layer and InxGa1-xN/GaN multilayered structures, with high Indium content (x>35%). In this study, InGaN/GaN films are epitaxially grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The microstructure of GaN and InxGa1-xN…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond, 2014, Lille, France. ⟨hal-00961396⟩