Publications

• Communication dans un congrès

Microwave optical switches metal-semiconductor-metal Schottky based on GaAs

Sabah Benzeghda, Farida Hobar, Didier Decoster, Jean-Francois Lampin, A. Benzeghda

Interdigitated metal-semiconductor-metal (MSM) photodetectors have received considerable attention for applications in microwave optical phoswitches. The impulse response of interdigitated metal-semiconductor- metal photoswich fabricated on GaAs non-intentional doped (NID) absorbing layer is…

International Conference on Renewable Energies and Power Quality, ICREPQ'14, 2014, Córdoba, Spain. paper 534, 5 p., ⟨10.24084/repqj12.534⟩. ⟨hal-00955226⟩

• Article dans une revue

Synthesis and electrical conductivity of multilayer silicene

Patrick Vogt, Pierre Capiod, Maxime Berthe, Andrea Resta, Paola de Padova, Thomas Brühne, Guy Le Lay, B. Grandidier

The epitaxial growth and the electrical resistance of multilayer silicene on the Ag(111) surface has been investigated. We show that the atomic structure of the first silicene layer differs from the next layers and that the adsorption of Si induces the formation of extended silicene terraces…

Applied Physics Letters, 2014, 104 (2), 021602, 5 p. ⟨10.1063/1.4861857⟩. ⟨hal-00934419⟩

• Article dans une revue

High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

Ali Soltani, Michel Rousseau, Jean-Claude Gerbedoen, Maghnia Mattalah, P.L. Bonanno, A. Telia, Nour Eddine Bourzgui, Gilles Patriarche, A. Ougazzaden, A. Ben Moussa

High performance titanium nitride sub-100 nm rectifying contact, deposited by sputtering on AlGaN/GaN high electron mobility transistors, shows a reverse leakage current as low as 38 pA/mm at VGS = -40 V and a Schottky barrier height of 0.95 eV. Based on structural characterization and 3D…

Applied Physics Letters, 2014, 104, 233506, 5 p. ⟨10.1063/1.4882415⟩. ⟨hal-01009966⟩

• Article dans une revue

Ferroelectric thin films working at microwave frequency for reconfigurable devices on silicon substrate: performances comparison between BST, PST

Freddy Ponchel, Denis Remiens, Areski Ghalem, Tuami Lasri

The dielectric microwave performance of BST and PST films is studied via tunability. The films are deposited onto silicon wafer with high resistivity using radio frequency magnetron sputtering with an in situ process for BST films and ex situ for PST films. In order to improve the crystalline…

International Journal of Materials Engineering Innovation, 2014, 5 (4), pp.327. ⟨10.1504/IJMATEI.2014.066857⟩. ⟨hal-03525889⟩

• Communication dans un congrès

A GaN Schottky diode-based analog phase shifter MMIC

Chong Jin, Etienne Okada, Marc Faucher, Damien Ducatteau, Mohammed Zaknoune, Dimitris Pavlidis

A GaN Schottky Diode-based Analog Phase Shifter MMIC of T-topology has been designed for 35 GHz operation. An all E-Beam technology was employed for MMIC realization. The measured, as well modeled small and large-signal diode characteristics were used for evaluating the phase-shifter performance in…

9th European Microwave Integrated Circuit Conference (EuMIC), Oct 2014, Rome, Italy. pp.96-99, ⟨10.1109/EuMIC.2014.6997800⟩. ⟨hal-03286170⟩

• Article dans une revue

Experimental determination of temperature-dependent electron-electron collision frequency in isochorically heated warm dense gold

C. Fourment, F. Deneuville, D. Descamps, F. Dorchies, S. Petit, O. Peyrusse, B. Holst, V. Recoules

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 89 (16), ⟨10.1103/PhysRevB.89.161110⟩. ⟨hal-01561840⟩

• Article dans une revue

Epitaxial hexagonal boron nitride on Ir(111) : a work function template

Fabian Schulz, Robert Drost, Sampsa K. Hämäläinen, Thomas Demonchaux, Ari P. Seitsonen, Peter Liljeroth

Hexagonal boron nitride (h-BN) is a prominent member in the growing family of two-dimensional materials with potential applications ranging from being an atomically smooth support for other two-dimensional materials to templating growth of molecular layers. We have studied the structure of…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 89 (23), pp.2354293. ⟨10.1103/PhysRevB.89.235429⟩. ⟨hal-01044795⟩

• Communication dans un congrès

Experimental investigation of the characteristics of the electromagnetic reverberation in the UWB bands

Aliou Bamba, Wout Joseph, Emmeric Tanghe, Luc Martens, Davy Gaillot, M. Lienard, Jose-Maria Molina-Garcia-Pardo, Maria-Teresa Martinez-Ingles

The electromagnetic reverberation time characteristics are investigated at UltraWide Band (UWB) frequencies, i.e., from 2 to 10 GHz. The reverberation time is bandwidth independent and decreases as the frequency increases. Besides, the reverberation ratio - the contribution of the diffuse fields in…

2014 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, AP-S/URSI 2014, Jul 2014, Memphis, TN, United States. pp.1181-1182, ⟨10.1109/APS.2014.6904917⟩. ⟨hal-03346231⟩

• Communication dans un congrès

Broadband sound shielding of Lamb waves through a periodic array of junctions

R.P. Moiseyenko, Yan Pennec, R. Marchal, B. Bonello, Bahram Djafari-Rouhani

We study theoretically sub-wavelength physical phenomena such as resonant transmission and broadband sound shielding for Lamb waves propagating in an acoustic metamaterial made of a thin plate drilled with one or two row(s) of rectangular holes. One of the main results is the demonstration of a…

2014 8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, METAMATERIALS 2014, Aug 2014, Copenhagen, Denmark. pp.100-102, ⟨10.1109/MetaMaterials.2014.6948609⟩. ⟨hal-03508189⟩

• Article dans une revue

100nm AlSb/InAs HEMT for ultra-low-power consumption, low-noise applications

Cyrille Gardès, Sonia Bagumako, L. Desplanque, Nicolas Wichmann, S. Bollaert, Francois Danneville, Xavier Wallart, Yannick Roelens

We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies of 100/125 GHz together with minimum noise figure dB and associated gain dB at 12 GHz have…

SCIENTIFIC WORLD JOURNAL, 2014, 2014, 136340, 6 p. ⟨10.1155/2014/136340⟩. ⟨hal-00969148⟩