Publications

Affichage de 2511 à 2520 sur 15064


  • Article dans une revue

Highly tunable high-Q inversion-mode MOS varactor in the 1-325-GHz band

Marc Margalef-Rovira, Abdelhalim Saadi, L. Vincent, Sylvie Lepilliet, Christophe Gaquière, D. Gloria, C. Durand, Manuel J. Barragan, Emmanuel Pistono, Sylvain Bourdel, Philippe Ferrari

This article presents the design, experimental results, and modeling of an inversion-mode CMOS varactor integrated in the STMicroelectronics 55-nm BiCMOS technology. The device was characterized from 1 to 325 GHz, demonstrating high-quality factor at millimeter-waves. For instance, a quality factor…

IEEE Transactions on Electron Devices, 2020, 67 (6), pp.2263-2269. ⟨10.1109/TED.2020.2989726⟩. ⟨hal-02899947⟩

  • Article dans une revue

Magnetic demultiplexer circuit with four channels

A. Mouadili, Abdellatif Akjouj, E. H. El Boudouti, L. Dobrzynski

We present a magnetic demultiplexer that allows us to transfer a magnon from one guide to another without perturbation the other guides. The proposed devise is formed by introducing a resonant system between two infinite guides. The resonant system has the role of coupling the guides to allow the…

Journal of Experimental and Theoretical Physics (JETP) / Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, 2020, 130 (6), pp.859-863. ⟨10.1134/S1063776120050076⟩. ⟨hal-03321528⟩

  • Article dans une revue

A tale of Tartaglia’s Libro Sesto & La Gionta in Quesiti et Inventioni Diverse (1546-1554): exploring the historical and cultural foundations

Raffaele Pisano

Foundations of Science, 2020, 25 (2), pp.477-505. ⟨10.1007/s10699-019-09635-2⟩. ⟨hal-03141823⟩

  • Article dans une revue

Modeling and analysis of a broadband Schottky diode noise source up to 325 GHz based on 55-nm SiGe BiCMOS technology

Issa Alaji, Walid Aouimeur, Sylvie Lepilliet, Daniel Gloria, Christophe Gaquière, Francois Danneville, Guillaume Ducournau, Haitham Ghanem, Joao Carlos Azevedo Goncalves, Pascal Chevalier

In this article, the electrical model of a millimeter-wave (mmW), silicon-based noise source is developed in the frequency range up to 325 GHz. The model is studied as a function of the biasing current and the structure size. The noise source is based on a Schottky diode realized on the 55-nm SiGe…

IEEE Transactions on Microwave Theory and Techniques, 2020, 68 (6), pp.2268-2277. ⟨10.1109/TMTT.2020.2980513⟩. ⟨hal-03141657⟩