Publications

Affichage de 3141 à 3150 sur 15026


  • Article dans une revue

Doped colloidal InAs nanocrystals in the single ionized dopant limit

Moussa Biaye, Yorai Amit, Kamil Gradkowski, Natalia Turek, S. Godey, Younes Makoudi, D. Deresmes, Athmane Tadjine, Christophe Delerue, Uri Banin, Thierry Melin

We investigate the electronic properties of individual n-type (Cu) doped and p-type (Ag) doped InAs colloidal nanocrystals (NCs) in the 2–8 nm size range from their charge transfers toward a highly oriented pyrolytic graphite (HOPG) substrate, using ultrahigh vacuum Kelvin probe force microscopy (…

Journal of Physical Chemistry C, 2019, 123 (23), pp.14803-14812. ⟨10.1021/acs.jpcc.9b02576⟩. ⟨hal-02162600⟩

  • Communication dans un congrès

[Invited] Two approaches with molecules and organic materials for reservoir computing.

Dominique Vuillaume

1st Workshop on Neuromorphic Organic Devices, Jun 2019, Ferrara, Italie, Italy. ⟨hal-04559862⟩

  • Communication dans un congrès

Interféromètre six-port intégré en bande V pour applications radar et communications

Christophe Loyez, Michael Bocquet, Ali El Moussati, Kamel Haddadi

TELECOM'2019 & 11èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, Jun 2019, Saïdia, Maroc. ⟨hal-03573203⟩

  • Communication dans un congrès

GaN Schottky Diode for High Power THz Generation using Multiplier Principle

Giuseppe Di Gioia, V K Chinni, Malek Zegaoui, Y Cordier, A Maestrini, J Treuttel, Guillaume Ducournau, Yannick Roelens, M Zaknoune

GaN-based planar Schottky barrier diodes with potential applications in THz frequency multipliers were fabricated and characterized. GaN is a promising candidate to overcome all the physical limitations of GaAs which have been reached in the frame of high frequency power multiplier applications.…

Proc. 43rd Workshop Compound Semiconductor Devices Integr. Circuits (WOCSDICE), Jun 2019, Cabourg, France. ⟨hal-03384353⟩