Publications

• Communication dans un congrès

Contrôle passif des tubes par inter-corrélation de champ acoustique ambiant

S. Djili, Emmanuel Moulin, Jamal Assaad, F. Boubenider, Farouk Benmeddour

3ème Conférence Internationale sur le Soudage, le Contrôle Non Destructif et l'Industrie des Matériaux et Alliages, IC-WNDT-MI'12, 2012, Aïn El Turck-Oran, Algérie. pp.17-21. ⟨hal-00802648⟩

• Communication dans un congrès

Time-domain semiconductor structure simulation based on 2D/3D coupled electromagnetism/transport modeling

Christophe Dalle

Advanced Electromagnetics Symposium, AES 2012, 2012, Paris, France. pp.116-120. ⟨hal-00802589⟩

• Communication dans un congrès

Specular path estimation errors with ESPRIT, SAGE, and RiMAX in the presence of dense multipath

E. Tanghe, L. Martens, W. Joseph, D.P. Gaillot, M. Lienard, Pierre Degauque

2nd IEEE-APS Topical Conference on Antennas and Propagation in Wireless Communications, IEEE APWC'12, 2012, Cape Town, South Africa. pp.315-316, ⟨10.1109/APWC.2012.6324917⟩. ⟨hal-00802575⟩

• Communication dans un congrès

An upper bound of soft decode and forward relaying over Rayleigh fading channels

H. Ben Chikha, Iyad Dayoub, S. Chaoui, R. Attia

16th WSEAS International Conference on Communications, part of CSCC'12, 2012, Kos Island, Greece. pp.485-489. ⟨hal-00802558⟩

• Communication dans un congrès

An optimized pilots position method for V2X synchronization

A. Sassi, F. Charfi, L. Kamoun, Yassin El Hillali, Atika Rivenq

6th International Symposium on Signal, Image, Video and Communications, ISIVC 2012, 2012, Valenciennes, France. paper ID 43, 171-175. ⟨hal-00802522⟩

• Communication dans un congrès

Kinetics of N2(B3Πg) and N2(C3Πu) states in N2-Ar discharges sustained by a RF helical coupling device

Corinne Foissac, Jaroslav Krištof, Adriana Annusova, Pavel Veis, Philippe Supiot

A kinetic model is discussed for the two main emitting species (N2(B), N2(C)) of a N2-Ar plasma excited at 27 MHz by a helical cavity with operating pressure of 200 Pa. The present paper consistently illustrates, for miscellaneous Ar fractions and different positions, the great influence of the…

XXI Europhysics Conference on Atomic and Molecular Physics of Ionized Gases, ESCAMPIG 2012, Jul 2012, Viana do Castelo, Portugal. paper P1.1.9, 1-2. ⟨hal-00802620⟩

• Article dans une revue

Low cost 60 GHz new thin pyralux membrane antennas FED by substrate integrated waveguide

Tristan Sarrazin, Hamsakutty Vettikalladi, Olivier Lafond, Mohamed Himdi, Nathalie Rolland

A low cost technology based on FR4 and thin flexible Pyralux substrate to develop membrane antennas/array with high efficiency and wide bandwidth for high speed V-band communication systems is proposed in this paper. A new low cost thin Pyralux substrate with a thickness of 75 μm, relative…

Progress In Electromagnetics Research B, 2012, 42, pp.207-224. ⟨10.2528/PIERB12052508⟩. ⟨hal-00804778⟩

• Communication dans un congrès

Source-drain scaling of ion-implanted InAs/AlSb HEMTs

G. Moschetti, P. Nilsson, A. Hallen, L. Desplanque, X. Wallart, J. Grahn

24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. pp.57-60, ⟨10.1109/ICIPRM.2012.6403318⟩. ⟨hal-00801079⟩

• Communication dans un congrès

State of the art 200 GHz power measurements on SiGe:C HBT using an innovative load pull measurement setup

A. Pottrain, T. Lacave, D. Gloria, P. Chevalier, Christophe Gaquière

60th IEEE MTT-S International Microwave Symposium, IMS 2012, 2012, Montréal, Canada. pp.1-3, ⟨10.1109/MWSYM.2012.6259409⟩. ⟨hal-00801191⟩

• Communication dans un congrès

160W InAlN/GaN HEMTs amplifier at 2 GHz with optimized thermal management

Stéphane Piotrowicz, Olivier Jardel, Jean-Claude Jacquet, D. Lancereau, Raphaël Aubry, Erwan Morvan, Nicolas Sarazin, Jérémy Dufraisse, Charu Dua, Mourad Oualli, Eric Chartier, Marie-Antoinette Di Forte-Poisson, Christophe Gaquière, Sylvain Laurent Delage

We report on the realization and measurements of InAlN/GaN HEMTs on SiC substrate. At device level, load-pull power measurements were performed at 2 GHz on 2.2mm devices in CW mode. An output power of 10.5W (40.2dBm) with a PAE of 53% were reached. Then, an amplifier was realized using 36mm power…

34th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, Oct 2012, La Jolla, CA, United States. pp.1-4, ⟨10.1109/CSICS.2012.6340059⟩. ⟨hal-00801142⟩