Publications

Affichage de 8071 à 8080 sur 15700


  • Article dans une revue

Strain relief and growth optimization of GaSb on GaP by molecular beam epitaxy

Y. Wang, P. Ruterana, Jie Chen, L. Desplanque, S. El Kazzi, X. Wallart

Journal of Physics: Condensed Matter, 2012, 24, pp.335802-1-7. ⟨10.1088/0953-8984/24/33/335802⟩. ⟨hal-00787023⟩

  • Article dans une revue

Growth mode dependence of misfit dislocation configuration at lattice mismatched III-V semiconductor interfaces

Y. Wang, P. Ruterana, L. Desplanque, S. El Kazzi, X. Wallart

EPL - Europhysics Letters, 2012, 97, pp.68011-1-6. ⟨10.1209/0295-5075/97/68011⟩. ⟨hal-00786985⟩

  • Article dans une revue

Thermal boundary resistance at silicon-silica interfaces by molecular dynamics simulations

E. Lampin, Q.H. Nguyen, P.A. Francioso, F. Cleri

Applied Physics Letters, 2012, 100, pp.131906-1-4. ⟨10.1063/1.3698325⟩. ⟨hal-00787869⟩

  • Article dans une revue

Small polaron migration associated multiple dielectric responses of multiferroic DyMnO3 polycrystal in low temperature region

J. Yang, J. He, J.Y. Zhu, W. Bai, Luyan Sun, X.J. Meng, X.D. Tang, C.G. Duan, Denis Remiens, J.H. Qiu, J.H. Chu

Applied Physics Letters, 2012, 101, pp.222904-1-5. ⟨10.1063/1.4768790⟩. ⟨hal-00788345⟩

  • Article dans une revue

Elasticity of flexible and semiflexible polymers with extensible bonds in the Gibbs and Helmholtz ensembles

F. Manca, S. Giordano, Pier Luca Palla, R. Zucca, F. Cleri, L. Colombo

The Journal of Chemical Physics, 2012, 136, pp.154906-1-10. ⟨10.1063/1.4704607⟩. ⟨hal-00787357⟩

  • Communication dans un congrès

RF operation of InAs quantum hot electron transistors

H. Nguyen Van, A. N. Baranov, M. Zaknoune, R. Teissier

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801051⟩

  • Communication dans un congrès

InAs hot electron transistors with cutoff frequency above 200 GHz

H. Nguyen Van, A. N. Baranov, R. Teissier, M. Zaknoune

24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. ⟨hal-00797314⟩

  • Article dans une revue

480-GHz fmax in InP/GaAsSb/InP DHBT with new base isolation µ-airbridge design

M. Zaknoune, E. Mairiaux, Yannick Roelens, N. Waldhoff, U. Rouchy, P. Frijlink, M. Rocchi, H. Maher

IEEE Electron Device Letters, 2012, 33, pp.1381-1383. ⟨10.1109/LED.2012.2210187⟩. ⟨hal-00786893⟩

  • Communication dans un congrès

Integrative Technology-Based Approach of Microelectromechanical Systems (MEMS) for Biosensing Applications

Liviu Nicu, Thomas Alava, Thierry Leichle, Daisuke Saya, Jean Bernard Pourciel, Fabrice Mathieu, Caroline Soyer, Denis Remiens, Cédric Ayela, Karsten Haupt

EMBC'12, 2012, San Diego, United States. 4 p. ⟨hal-00865903⟩

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