Publications

• Communication dans un congrès

Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET

Aurélien Olivier, Nicolas Wichmann, Jiongjong Mo, Albert M.D. Noudeviwa, Yannick Roelens, L. Desplanque, X. Wallart, Francois Danneville, Gilles Dambrine, S. Bollaert, François Martin, O. Desplats, Jérôme Saint-Martin, Minghua Shi, Y. Wang, M-P Chauvat, P. Ruterana, Hassan Maher

In this paper, a 200 nm n-channel inversion-type self-aligned In 0.53 Ga 0.47 As MOSFET with a Al 2 O 3 gate oxide deposited by Atomic Layer Deposition (ALD) is demonstrated. Two ion implantation processes using silicon nitride side-wall are performed for the fabrication of the n-type source and…

22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, May 2010, Takamatsu, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩. ⟨hal-00549921⟩

• Communication dans un congrès

A compact coplanar waveguide metamaterial-inspired line and its use in tunable narrow bandpass filters

Alejandro Borja, Jorge Carbonell, Vicente Boria, Angel Belenguer, Didier Lippens

In this paper, novel cells, arrays, and reconfigurable metamaterial-inspired coplanar waveguide lines are studied. The novelty stems from the control of the so-called electric and magnetic plasma frequencies by properly designing the loading elements. In particular, wide shunt wires permit one to…

40th European Microwave Conference, EuMC 2010, Sep 2010, Paris, France. pp.922-925, ⟨10.23919/EUMC.2010.5616941⟩. ⟨hal-00549943⟩

• Article dans une revue

A novel design of a multiband microstrip antenna for the 3G cellular phones applications

M. Ben Ahmed, M. Bouhorma, F. El Ouaai, A. Mamouni, A.A. Boudhir

International Journal of Information and Communication Technologies, 2010, 3, pp.1-7. ⟨hal-00591736⟩

• Communication dans un congrès

Bottom-up approach to designing nanostructured materials for a variety of applications

D. Hourlier

7th International Conference on Inorganic Materials, 2010, Biarritz, France. ⟨hal-00591743⟩

• Communication dans un congrès

Influence de la température et de l'efficacité d'injection sur les caractéristiques physiques des lasers à cascades quantiques

A. Hamadou, D. Nehari, S. Lamari, Jean-Luc Thobel

International Conference on Optics, Photonics and their Applications, ICOPA 2010, 2010, Algiers, Algérie. ⟨hal-00591740⟩

• Article dans une revue

Calculating Kelvin force microscopy signals from static force fields

Lukasz Borowik, Koku Kusiaku, Didier Theron, Thierry Melin

We present an analytical formula to achieve numerical simulations of Kelvin force microscopy KFM signals from static force fields, which can be employed to describe amplitude-modulation or frequency-modulation KFM, as well as simultaneous topography and KFM modes for which the tip probe exhibits a…

Applied Physics Letters, 2010, 96, pp.103119-1-3. ⟨10.1063/1.3323098⟩. ⟨hal-00549047⟩

• Article dans une revue

Large area 0-3 and 1-3 piezoelectric composites based on single crystal PMN-PT for transducer applications

M. Pham Thi, Anne-Christine Hladky, H. Le Khanh, L.P. Tran-Huu-Hue, M. Lethiecq, F. Levassort

0-3 and 1-3 composites have been fabricated using piezoelectric single crystals (PSCs). These two connectivities were specifically chosen for large area fabrication. In particular, a lamination technique was used for 1-3 piezocomposites instead of the standard dice and fill method. For 0-3…

Physics Procedia, 2010, 3, pp.897-904. ⟨10.1016/j.phpro.2010.01.115⟩. ⟨hal-00549549⟩

• Article dans une revue

Monte Carlo based microscopic description of electron transport in GaAs/Al0.45Ga0.55As quantum-cascade laser structure

P. Borowik, Jean-Luc Thobel, L. Adamowicz

Results of multiparticle Monte Carlo simulations of midinfrared quantum cascade lasers structure initially fabricated by Page et al. are presented. The main aim of this paper is to discuss in details how electric current flows through the structure and which subbands are involved in this process.…

Journal of Applied Physics, 2010, 108 (7), pp.073106. ⟨10.1063/1.3488909⟩. ⟨hal-00549482⟩

• Article dans une revue

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, Didier Theron, Christophe Gaquière, M.A. Poisson, S. Delage, P. Pristawko, C. Skierbiszewski

We report on room temperature terahertz generation by a submicron size AlGaN/GaN-based high electron mobility transistors. The emission peak is found to be tunable by the gate voltage between 0.75 and 2.1 THz. Radiation frequencies correspond to the lowest fundamental plasma mode in the gated…

Journal of Applied Physics, 2010, 107 (2), pp.024504. ⟨10.1063/1.3291101⟩. ⟨hal-00549452⟩

• Article dans une revue

Dielectric microwave characterizations of (Ba,Sr)TiO3 film deposited on high resistivity silicon substrate : analysis by two-dimensional tangential finite element method

Freddy Ponchel, J. Midy, Jean-François Legier, Caroline Soyer, Denis Remiens, T. Lasri, G. Gueguan

Journal of Applied Physics, 2010, 107, pp.054112-1-5. ⟨10.1063/1.3309423⟩. ⟨hal-00549504⟩