Publications

Affichage de 10181 à 10190 sur 16175


  • Communication dans un congrès

Efficient terahertz mixer from plasma wave downconversion in InGaAs HEMT

Laurent Chusseau, J. Torres, P. Nouvel, H. Marinchio, L. Varani, Jean-Francois Lampin, S. Bollaert, Yannick Roelens, D. Dolfi

OPTO, 2010, San Francisco, United States. pp.760816, ⟨10.1117/12.846874⟩. ⟨hal-02443155⟩

  • Communication dans un congrès

Slow-wave shielded coplanar striplines for UWB filtering applications

M. Abdelaziz, Florence Podevin, A. Safwat, Anne-Laure Franc, Emmanuel Pistono, N. Corrao, A. Vilcot, P. Ferrari

Slow-wave shielded coplanar striplines for UWB filtering applications, Dec 2009, New Delhi, India. ⟨hal-00602887⟩

  • Brevet

Microelectromechanical System Comprising a Deformable Portion and a Stress Sensor

S. Arscott

United States, Patent n° : US20090301176A1. 2009. ⟨hal-02345851⟩

  • Brevet

Strain sensor with high gauge factor

A. Rowe, C. Renner, S. Arscott

Patent n° : EP2131169 (A1). 2009. ⟨hal-00455322⟩

  • Article dans une revue

Optically active defects in an InAsP/InP quantum well monolithically grown on SrTiO3(001)

Jinquan Cheng, Thomas Aviles, Ahiram El Akra, C. Bru-Chevallier, Ludovic Largeau, Gilles Patriarche, Philippe Regreny, A. Benamrouche, Y. Robach, Guy Hollinger, Guillaume Saint-Girons

The optical properties of an InAsP/InP quantum well grown on a SrTiO3(001) substrate are analyzed. At 13 K, the photoluminescence yield of the well is comparable to that of a reference well grown on an InP substrate. Increasing the temperature leads to the activation of nonradiative mechanisms for…

Applied Physics Letters, 2009, 95 (23), ⟨10.1063/1.3273850⟩. ⟨hal-01901801⟩

  • Communication dans un congrès

Terahertz imaging using high electron mobility transistors as plasma wave detectors

S. Nadar, D. Coquillat, M. Sakowicz, H. Videlier, F. Teppe, N. Dyakonova, W. Knap, J.-M. Peiris, J. Lyonnet, D. Seliuta, I. Kasalynas, G. Valusis, K. Madjour, Didier Theron, Christophe Gaquière, M.-A. Poisson

Two experiments demonstrate that high electron mobility transistors (HEMTs) are well suited for terahertz (THz) imaging. We have shown that HEMTs can be effectively used as plasma wave detectors in a THz imaging system at frequencies higher than 1 THz at room temperature and this device are…

15th International Semiconducting and Insulating Materials Conference (SIMC-XV) Vilnius Univ, Vilnius, LITHUANIA, Jun 2009, Lithuania. pp.2855-2857, ⟨10.1002/PSSC.200982532⟩. ⟨hal-00545979⟩