Publications

• Article dans une revue

Si nanowire ion-sensitive field-effect transistors with a shared floating gate

K. Nishiguchi, N. Clement, T. Yamaguchi, A. Fujiwara

Applied Physics Letters, 2009, 94, pp.163106-1-3. ⟨10.1063/1.3123002⟩. ⟨hal-00472768⟩

• Article dans une revue

Electron-phonon coupling and intervalley splitting determine the linewidth of single-electron transport through PbSe nanocrystals

Karin Overgaag, Daniel Vanmaekelbergh, Peter Liljeroth, Gauthier Mahieu, B. Grandidier, Christophe Delerue, Guy Allan

The linewidth of the resonances in the single-electron tunneling spectra has been investigated for PbSe semiconductor nanocrystals (NCs) with scanning tunneling spectroscopy at low temperature. The linewidth of the resonances corresponding to tunneling through the first conduction and valence…

The Journal of Chemical Physics, 2009, 131, pp.224510-1-5. ⟨10.1063/1.3272952⟩. ⟨hal-00473088⟩

• Article dans une revue

Silicon nanowires coated with silver nanostructures as ultrasensitive interfaces for surface-enhanced Raman spectroscopy

E. Galopin, J. Barbillat, Yannick Coffinier, Sabine Szunerits, G. Patriarche, Rabah Boukherroub

Silver nanoparticles (Ag NPs) were chemically deposited on silicon nanowires (SiNWs), prepared using the vapor−liquid−solid (VLS) growth mechanism, using an in situ electroless metal deposition technique. The resulting SiNWs/Ag NPs composite interfaces showed large Raman scattering enhancement for…

Applied Materials & Interfaces, 2009, 1, pp.1396-1403. ⟨10.1021/am900087s⟩. ⟨hal-00413200⟩

• Article dans une revue

Nanocrystallization of anatase or rutile TiO2 by laser treatment

O. van Overschelde, G. Guisbiers, M. Wautelet

Journal of Physical Chemistry C, 2009, 113, pp.15343-15345. ⟨10.1021/jp905163j⟩. ⟨hal-00472742⟩

• Article dans une revue

Influence of the branches width on the nonlinear output characteristics of InAlAs/InGaAs-based three-terminal junctions

I. Iniguez de La Torre, T. Gonzalez, D. Pardo, C. Gardes, Yannick Roelens, S. Bollaert, J. Mateos

Journal of Applied Physics, 2009, 105 (9), pp.094504. ⟨10.1063/1.3124363⟩. ⟨hal-00471809⟩

• Article dans une revue

Enhancement in nanoscale electrical properties of lead zirconic titanate island fabricated by focused ion beam

R.H. Liang, Denis Remiens, D. Deresmes, Caroline Soyer, David Troadec, X.L. Dong, L.H. Yang, Rachel Desfeux, Antonio Da Costa, Jean-François Blach

Journal of Applied Physics, 2009, 105 (4), pp.044101. ⟨10.1063/1.3073892⟩. ⟨hal-00473718⟩

• Article dans une revue

Molecular dynamics simulations of the solid phase epitaxy of Si : growth mechanism and orientation effects

E. Lampin, Christophe Krzeminski

Journal of Applied Physics, 2009, 106, pp.063519-1-8. ⟨10.1063/1.3211972⟩. ⟨hal-00471990⟩

• Article dans une revue

Train-to-wayside wireless communication in tunnel using ultra-wide-band and time reversal

H. Saghir, M. Heddebaut, F. Elbahhar, Jean-Michel Rouvaen, Atika Rivenq, J.P. Ghys

Transportation research. Part C, Emerging technologies, 2009, 17, pp.81-97. ⟨10.1016/j.trc.2008.09.003⟩. ⟨hal-00471843⟩

• Article dans une revue

Luminescence and reflectivity characterization of AlGaN/GaN high electron mobility transistors

N. Baron, M. Leroux, N. Zeggaoui, P. Corfdir, F. Semond, Z. Bougrioua, M. Azize, Y. Cordier, J. Massies

Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6, pp.S715-S718. ⟨10.1002/pssc.200880828⟩. ⟨hal-00472680⟩

• Article dans une revue

Noise spectroscopy of AlGaN/GaN HEMT structures with long channels

S.A. Vitusevich, M.V. Petrychuk, A.M. Kurakin, S.V. Danylyuk, D. Mayer, Z. Bougrioua, A.V. Naumov, A.E. Belyaev, N. Klein

Journal of Statistical Mechanics: Theory and Experiment, 2009, 9, pp.P01046-1-10. ⟨10.1088/1742-5468/2009/01/P01046⟩. ⟨hal-00472677⟩