Publications

Affichage de 10881 à 10890 sur 16090


  • Article dans une revue

High frequency ultrasonic detection of C-crack defects in silicon nitride bearing balls

F. Deneuville, Marc Duquennoy, Mohammadi Ouaftouh, Mohamed Ourak, Frédéric Jenot, S. Desvaux

Ultrasonics, 2009, 49, pp.89-93. ⟨10.1016/j.ultras.2008.06.010⟩. ⟨hal-00473716⟩

  • Article dans une revue

Use of the circuit approach to solve large EMC problems

S. Leman, B. Demoulin, O. Maurice, M. Cauterman, P. Hoffmann

Comptes Rendus. Physique, 2009, 10, pp.70-82. ⟨10.1016/j.crhy.2009.01.006⟩. ⟨hal-00473696⟩

  • Article dans une revue

The inter-modes mixing effects in mode group diversity multiplexing

M. Awad, Iyad Dayoub, A. Okassa M'Foubat, Jean-Michel Rouvaen

Optics Communications, 2009, 282, pp.3908-3917. ⟨10.1016/j.optcom.2009.06.065⟩. ⟨hal-00471836⟩

  • Article dans une revue

Parallel interference cancellation in DS-CDMA optical networks using bias compensation

A. Okassa M'Foubat, Iyad Dayoub, Jean-Michel Rouvaen, Y. Zouine

European Transactions on Telecommunications, 2009, 20, pp.564-571. ⟨10.1002/ett.1358⟩. ⟨hal-00471835⟩

  • Article dans une revue

Ultra-sensitive capacitive detection based on SGMOSFET compatible with front-end CMOS process

E. Colinet, C. Durand, L. Duraffourg, P. Audebert, G. Dumas, F. Casset, E. Ollier, P. Ancey, J.F. Carpentier, L. Buchaillot, A.M. Ionescu

IEEE Journal of Solid-State Circuits, 2009, 44, pp.247-257. ⟨10.1109/JSSC.2008.2007448⟩. ⟨hal-00472755⟩

  • Article dans une revue

Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Yvon Cordier, Fabrice Semond, Jean-Christophe Moreno, Éric Frayssinet, Brahim Benbakhti, Z. Cao, Sébastien Chenot, Lee Nguyen, Olivier Tottereau, Ali Soltani, Karine Blary

In this work, we describe the main features of selective area growth (SAG) of GaN by molecular beam epitaxy (MBE) using ammonia. Different schemes such as growth into micrometer and nanometer size windows in Si3N4 dielectric masks and mesa structures etched on GaN or Silicon substrate are studied.

Materials Science in Semiconductor Processing, 2009, 12, pp.16-20. ⟨10.1016/j.mssp.2009.07.003⟩. ⟨hal-00473644⟩

  • Communication dans un congrès

An organic-nanoparticle transistor behaving as a spiking synapse

F. Alibart, Christophe Novembre, David Guérin, Stéphane Pleutin, K. Lmimouni, Christian Gamrat, Dominique Vuillaume

4th International Meeting on Molecular Electronics, ElecMol'08, Dec 2008, Grenoble, France. ⟨hal-00361614⟩