Publications

Affichage de 10901 à 10910 sur 16106


  • Proceedings/Recueil des communications

Il ruolo della scienza archimedea nei lavori di meccanica di Galilei e di Torricelli (The role of Archimedean science in the mechanical works of Galileo and Torricelli)

Raffaele Pisano

From Archimedes To Majorana: Physics in its development. Proceedings of 6th SISFA Conference Sociatá Italiana degli Storici della Fisica e dell'Astronomia, Guaraldi, pp.65-74, 2009, 978–888–049–349–5. ⟨hal-04517946⟩

  • Autre publication scientifique

TOSCANE - optimised transmission of scalable video in terms of source/channel coding

L Carminati, As Bacquet, Christophe Deknudt, Patrick Corlay, Mohamed Gharbi, François-Xavier Coudoux, Marie Zwingelstein, Marc G. Gazalet, Y Berviller, H Rabah, M Guarisco, Sébastien J Weber, O Salem, A Senoussaoui, A Mehaoua

2009. ⟨hal-03983476⟩

  • Proceedings/Recueil des communications

On categories and scientific approach in historical discourse

Raffaele Pisano, Ilaria Gaudiello

Style of Thinking in Science and Technology Proceedings of 3rd European Society of the History of Science Conference, Austrian Academy of Sciences Press, pp.187-197, 2009, 978-3700168461. ⟨hal-04513905⟩

  • Communication dans un congrès

V-Band Amplifier MMICs Using Multi-Finger InP/GaAsSb DHBT Technology

J. Godin, V. Nodjiadjim, M. Riet, P. Berdaguer, S. Piotrowicz, O. Jardel, A. Scavennec, Jean-Christophe Nallatamby, Christophe Gaquière, M. Werquin

We report on the development of a multi-finger InP/GaAsSb DHBT technology, optimized for the fabrication of RF MMICs. Geometry (number of fingers) and structure optimization has allowed to get FT~200 GHz and FMAX>300 GHz, to suit microwave applications. Special attention has been paid to…

31st IEEE Compound Semiconductor Integrated Circuit Symposium, CSISC 2009, Oct 2009, Greensboro - Caroline du Nord, United States. pp.1-4, ⟨10.1109/csics.2009.5315658⟩. ⟨hal-00474497⟩

  • Article dans une revue

Amine-terminated silicon nanoparticles: synthesis, optical properties and their use in bioimaging

Milena Rosso-Vasic, Evan Spruijt, Zoran Popovic, Karin Overgaag, Barend van Lagen, B. Grandidier, Daniel Vanmaekelbergh, David Dominguez-Gutierrez, Luisa de Cola, Han Zuilhof

Very stable and bright emitting amine-terminated Si nanoparticles (NPs) with different alkyl chain lengths between the Si core and amine end-group are synthesized. The obtained NPs have a spherical shape and homogeneous size distribution (1.57 ± 0.24 nm). Their emission can be tuned from the UV to…

Journal of Materials Chemistry, 2009, 19 (33), pp.5926-5933. ⟨10.1039/b902671a⟩. ⟨hal-00473065⟩

  • Article dans une revue

High frequency ultrasonic detection of C-crack defects in silicon nitride bearing balls

F. Deneuville, Marc Duquennoy, Mohammadi Ouaftouh, Mohamed Ourak, Frédéric Jenot, S. Desvaux

Ultrasonics, 2009, 49, pp.89-93. ⟨10.1016/j.ultras.2008.06.010⟩. ⟨hal-00473716⟩

  • Article dans une revue

Use of the circuit approach to solve large EMC problems

S. Leman, B. Demoulin, O. Maurice, M. Cauterman, P. Hoffmann

Comptes Rendus. Physique, 2009, 10, pp.70-82. ⟨10.1016/j.crhy.2009.01.006⟩. ⟨hal-00473696⟩

  • Article dans une revue

MMICs time-domain electrical physical simulator adapted to the parallel computation

A. El Moussati, Jean-Claude de Jaeger, Christophe Dalle

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2009, 22, pp.279-296. ⟨10.1002/jnm.706⟩. ⟨hal-00473652⟩

  • Article dans une revue

Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Yvon Cordier, Fabrice Semond, Jean-Christophe Moreno, Éric Frayssinet, Brahim Benbakhti, Z. Cao, Sébastien Chenot, Lee Nguyen, Olivier Tottereau, Ali Soltani, Karine Blary

In this work, we describe the main features of selective area growth (SAG) of GaN by molecular beam epitaxy (MBE) using ammonia. Different schemes such as growth into micrometer and nanometer size windows in Si3N4 dielectric masks and mesa structures etched on GaN or Silicon substrate are studied.

Materials Science in Semiconductor Processing, 2009, 12, pp.16-20. ⟨10.1016/j.mssp.2009.07.003⟩. ⟨hal-00473644⟩

  • Article dans une revue

(6 x 2) Reconstruction of the Ag/Si(111) surface at 77 K (vol 603, pg 311, 2009) - Corrigendum

A. Urbieta, K. Schulte, B. Grandidier, D. Deresmes, S.C. Erwin, D. Stievenard

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2009, 603, pp.1079-1079. ⟨10.1016/j.susc.2009.02.002⟩. ⟨hal-00473064⟩