Publications

Affichage de 10961 à 10970 sur 16106


  • Article dans une revue

Amine-terminated silicon nanoparticles: synthesis, optical properties and their use in bioimaging

Milena Rosso-Vasic, Evan Spruijt, Zoran Popovic, Karin Overgaag, Barend van Lagen, B. Grandidier, Daniel Vanmaekelbergh, David Dominguez-Gutierrez, Luisa de Cola, Han Zuilhof

Very stable and bright emitting amine-terminated Si nanoparticles (NPs) with different alkyl chain lengths between the Si core and amine end-group are synthesized. The obtained NPs have a spherical shape and homogeneous size distribution (1.57 ± 0.24 nm). Their emission can be tuned from the UV to…

Journal of Materials Chemistry, 2009, 19 (33), pp.5926-5933. ⟨10.1039/b902671a⟩. ⟨hal-00473065⟩

  • Article dans une revue

High frequency ultrasonic detection of C-crack defects in silicon nitride bearing balls

F. Deneuville, Marc Duquennoy, Mohammadi Ouaftouh, Mohamed Ourak, Frédéric Jenot, S. Desvaux

Ultrasonics, 2009, 49, pp.89-93. ⟨10.1016/j.ultras.2008.06.010⟩. ⟨hal-00473716⟩

  • Article dans une revue

Use of the circuit approach to solve large EMC problems

S. Leman, B. Demoulin, O. Maurice, M. Cauterman, P. Hoffmann

Comptes Rendus. Physique, 2009, 10, pp.70-82. ⟨10.1016/j.crhy.2009.01.006⟩. ⟨hal-00473696⟩

  • Article dans une revue

MMICs time-domain electrical physical simulator adapted to the parallel computation

A. El Moussati, Jean-Claude de Jaeger, Christophe Dalle

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2009, 22, pp.279-296. ⟨10.1002/jnm.706⟩. ⟨hal-00473652⟩

  • Article dans une revue

Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Yvon Cordier, Fabrice Semond, Jean-Christophe Moreno, Éric Frayssinet, Brahim Benbakhti, Z. Cao, Sébastien Chenot, Lee Nguyen, Olivier Tottereau, Ali Soltani, Karine Blary

In this work, we describe the main features of selective area growth (SAG) of GaN by molecular beam epitaxy (MBE) using ammonia. Different schemes such as growth into micrometer and nanometer size windows in Si3N4 dielectric masks and mesa structures etched on GaN or Silicon substrate are studied.

Materials Science in Semiconductor Processing, 2009, 12, pp.16-20. ⟨10.1016/j.mssp.2009.07.003⟩. ⟨hal-00473644⟩

  • Article dans une revue

(6 x 2) Reconstruction of the Ag/Si(111) surface at 77 K (vol 603, pg 311, 2009) - Corrigendum

A. Urbieta, K. Schulte, B. Grandidier, D. Deresmes, S.C. Erwin, D. Stievenard

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2009, 603, pp.1079-1079. ⟨10.1016/j.susc.2009.02.002⟩. ⟨hal-00473064⟩

  • Article dans une revue

The inter-modes mixing effects in mode group diversity multiplexing

M. Awad, Iyad Dayoub, A. Okassa M'Foubat, Jean-Michel Rouvaen

Optics Communications, 2009, 282, pp.3908-3917. ⟨10.1016/j.optcom.2009.06.065⟩. ⟨hal-00471836⟩

  • Article dans une revue

A batch-fabricated and electret-free silicon electrostatic vibration energy harvester

Philippe Basset, Dimitri Galayko, Ayyaz Mahmood Paracha, Frédéric Marty, Andrii Dudka, Tarik Bourouina

This paper presents a novel silicon-based and batch-processed MEMS electrostatic transducer for harvesting and converting the energy of vibrations into electrical energy without using an electret layer. Effective conversion from the mechanical-to-electric domains of 61 nW on a 60 M Omega resistive…

Journal of Micromechanics and Microengineering, 2009, 19 (11), pp.115025. ⟨10.1088/0960-1317/19/11/115025⟩. ⟨hal-00692939⟩