Publications

Affichage de 1121 à 1130 sur 16055


  • COMM

[Invited] Le contrôle santé intégré dans les transports par ondes guidées ultrasonores

Farouk Benmeddour

Club d’intérêt Nouveaux Matériaux opus #04, Thématique : Contrôle Non Destructif, CEA Tech, Nov 2023, Lille, France. ⟨hal-04570107⟩

  • COMM

A 291nW Real-Time Event-Driven Spectrogram Extraction unit in 28nm FD-SOI CMOS for Keyword Spotting Application

Soufiane Mourrane, Benoit Larras, Sylvain Clerc, Andreia Cathelin, Antoine Frappé

IEEE Asian Solid-State Circuits Conference, Nov 2023, Haikou, Hainan Island, China. ⟨hal-05053952⟩

  • ART

Photonic THz mixers based on iron-doped InGaAs embedded in a plasmonic microcavity

Charbel Tannoury, Victor Merupo, Giuseppe Di Gioia, Vanessa Avramovic, David Troadec, Jean-François Lampin, Guillaume Ducournau, Steffen Breuer, Björn Globisch, Stefano Barbieri, Robert B Kohlhaas, Emilien Peytavit

We present an optoelectronic mixer for the terahertz (THz) frequency-domain based on an iron-doped InGaAs layer integrated in a plasmonic microcavity. We show that this structure, under 1550-nm-wavelength illumination, allows for more than 70% absorption efficiency in a 220 nm-thin InGaAs absorber…

APL Photonics, 2023, 8 (11), pp.116101. ⟨10.1063/5.0153046⟩. ⟨hal-04268627⟩

  • ART

Analysis of Airgaps for Off State Capacitance Reduction in SOI CMOS RF Switches

Daniel Gheysens, Alain Fleury, Stephane Monfray, Frederic Gianesello, Philippe Cathelin, David Troadec, Jean-François Robillard, Emmanuel Dubois

This article analyses the introduction of airgaps in the interconnect network of SOI-CMOS based RF switches to significantly reduce the off-state capacitance COFF without degrading the on-state resistance RON. Based on the 130 nm node of an existing RF-SOI-CMOS technology, an accurate COFF…

IEEE Transactions on Electron Devices, 2023, 70 (11), pp.5814 - 5817. ⟨10.1109/TED.2023.3311415⟩. ⟨hal-04192324⟩