Publications

• Communication dans un congrès

Devices and circuits for HF applications based on 2D materials

Simon Skrzypczak, Di Zhou, Wei Wei, Dalal Fadil, Dominique Vignaud, Emiliano Pallecchi, Henri Happy

Graphene and related 2D materials have been extensively studied in recent years. As a result, numerous components have been developed for a wide range of applications in high frequency electronics and telecommunications. These include graphene field effect transistors (GFET) which can be used to…

2023 38th Conference on Design of Circuits and Integrated Systems (DCIS), Nov 2023, Málaga, Spain. pp.1-5, ⟨10.1109/DCIS58620.2023.10335977⟩. ⟨hal-04396932⟩

• Article dans une revue

Acoustic noise levels and field distribution in 7 T MRI scanners

Louena Shtrepi, Vinicius Poggetto, Clement Durochat, Marc Dubois, David Bendahan, Fabio Nistri, Marco Miniaci, Nicola Maria Pugno, Federico Bosia

Acoustic noise production during Magnetic Resonance Imaging is an important source of patient discomfort and leads to verbal communication problems, difficulties in sedation, and hearing impairment. To address these issues, in this paper we present a systematic characterization of the acoustic…

Frontiers in Physics, 2023, 11, ⟨10.3389/fphy.2023.1284659⟩. ⟨hal-04302825⟩

• Article dans une revue

Experimental evidence of nonreciprocal propagation in space-time modulated piezoelectric phononic crystals

S. Tessier Brothelande, C. Croënne, F. Allein, Jerome O. Vasseur, M. Amberg, Frédéric Giraud, Bertrand Dubus

A nonreciprocal system composed of a one-dimensional piezoelectric phononic crystal whose periodic electrical conditions are modulated in time is presented. One-way longitudinal wave propagation is studied experimentally and compared to finite element temporal simulations. The modulation is…

Applied Physics Letters, 2023, 123 (20), pp.201701. ⟨10.1063/5.0169265⟩. ⟨hal-04285080⟩

• Communication dans un congrès

[Award] Sub-micron thick AlN/GaN-on-Si HEMTs grown by MBE with reduced trapping effects and superior blocking voltage for RF applications

Elodie Carneiro, Stéphanie Rennesson, Sebastian Tamariz, Lyes Ben Hammou, Kathia Harrouche, Etienne Okada, Fabrice Semond, Farid Medjdoub

14th International Conference on Nitride Semiconductors (ICNS-14), Nov 2023, Nagoya, Japan. ⟨hal-04397317⟩

• Communication dans un congrès

Epi-design optimization in AlN/GaN HEMTs for superior drain bias operation and reduced trapping effects

Kathia Harrouche, Lyes Ben-Hammou, François Grandpierron, Ajay Shanbhag, Etienne Okada, F Medjdoub

14th International Conference on Nitride Semiconductors (ICNS-14), Nov 2023, Nagoya, Japan. ⟨hal-04436421⟩

• Communication dans un congrès

Refractive Index Modification in Thin Film Barium Titanate-on-Insulator and Dry Etch Free Fabrication of Waveguide Devices

Yu Cao, Hong-Lin Lin, Haidong Liang, Andrew Bettiol, El Hadj Dogheche, Aaron Danner

We present refractive index modification methods in thin-film barium titanate-on-insulator with a resultant index change up to 0.17, and propose dry etch free device fabrication methods for optical waveguide devices.

2023 IEEE Photonics Conference (IPC), Nov 2023, Orlando, United States. pp.1-2, ⟨10.1109/IPC57732.2023.10360613⟩. ⟨hal-04419271⟩

• Communication dans un congrès

Process optimization of Fully Vertical GaN-on-Silicon PIN diodes

Idriss Abid, Youssef Hamdaoui, Sondre Michler, Katir Ziouche, F Medjdoub

Lateral GaN-on-silicon power transistors are now qualified up to 650 V voltage operation [1]. On the other hand, the development of cost-effective GaN-based vertical devices grown on large diameter silicon substrate combines the advantages of potentially higher voltage operation with avalanche…

14th International Conference on Nitride Semiconductors (ICNS-14), Nov 2023, Nagoya, Japan. ⟨hal-04436413⟩

• Communication dans un congrès

Theoretical design for broadband parametric amplification in thin film lithium niobate

Pragati Aashna, Hong-Lin Lin, El Hadj Dogheche, Giacomo Benvenuti, Thanh N.K. Bui, Aaron Danner

2023 IEEE Photonics Conference (IPC), Nov 2023, Orlando, United States. pp.1-2, ⟨10.1109/IPC57732.2023.10360752⟩. ⟨hal-04419284⟩

• Communication dans un congrès

Dislocation density reduction for vertical GaN devices on 200 mm Si

Ziyao Gao, Youssef Hamdaoui, Idriss Abid, F Medjdoub, Elke Meissner, Sven Besendörfer, Michael Heuken

14th International Conference on Nitride Semiconductors (ICNS-14), Nov 2023, Nagoya, Japan. ⟨hal-04436407⟩

• Chapitre d'ouvrage

15. GaN-Based Lateral and Vertical Devices

Matteo Meneghini, Srabanti Chowdhury, Joff Derluyn, Farid Medjdoub, Dong Ji, Jaeyi Chun, Riad Kabouche, Carlo de Santi, Enrico Zanoni, Gaudenzio Meneghesso

In the last decade, GaN has emerged as an excellent material for application in power electronics. The wide energy gap of gallium nitride (3.4 eV) enables high-temperature operation, while the large breakdown field (3.3 MV/cm, 11 times higher than silicon) allows to reach kV-range operation while…

Massimo Rudan; Rossella Brunetti; Susanna Reggiani. Springer Handbook of Semiconductor Devices, Springer International Publishing, pp.525-578, 2023, Springer Handbooks, ⟨10.1007/978-3-030-79827-7_15⟩. ⟨hal-03875409⟩