Publications

• Article dans une revue

Energy transfer between semiconductor nanocrystals : validity of Förster's theory

Guy Allan, Christophe Delerue

We theoretically study the energy transfer between semiconductor nanocrystals and we calculate the rate of this process in the case of direct-gap (InAs) and indirect-gap (Si) semiconductors. The calculations are based on the tight-binding method that enables us to determine the transfer rate,…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75, pp.195311. ⟨10.1103/PhysRevB.75.195311⟩. ⟨hal-00283123⟩

• Article dans une revue

La teoria dei baricentri di Torricelli come fondamento della statica (Torricelli's theory of barycentre as a foundation of statics)

Danilo Capecchi, Raffaele Pisano

Physis; rivista internazionale di storia della scienza, 2007, XLIV (1), pp.1-29. ⟨hal-04508032⟩

• Communication dans un congrès

Growth and characterization of AlInN/GaN field effect transistors

J.F. Carlin, F Medjdoub, M. Gonschorek, E. Feltin, M.A. Py, Christophe Gaquière, N. Grandjean, E. Kohn

Proceedings of the 7th International Conference of Nitride Semiconductors, ICNS-7, 2007, Las Vegas, NV, United States. ⟨hal-00367697⟩

• Article dans une revue

Physical study of the dissipated power area in high electron mobility transistors for thermal modelling

Brahim Benbakhti, Michel Rousseau, Jean-Claude de Jaeger

The hot area in power transistors due to the power dissipation is determined from a 2D-hydrodynamic model. The power is calculated everywhere in the device from the knowledge of the physical quantities (current density, electric field). The hot area is determined accurately to be coupled to a…

Microelectronics Journal, 2007, 38 (1), pp.7-13. ⟨10.1016/j.mejo.2006.07.025⟩. ⟨hal-00283492⟩

• Article dans une revue

Comment on 'Sensitivity of surface states to the stack sequences of one-dimensional photonic crystals

Y. El Hassouani, E.H. El Boudouti, H. Aynaou, Bahram Djafari-Rouhani, V.R. Velasco

Comment on 'Sensitivity of surface states to the stack sequences of one-dimensional photonic crystals'. Journal of Optics A: Pure and Applied Optics, 2007, 9, pp.308-313. ⟨10.1088/1464-4258/9/3/N01⟩. ⟨hal-00283125⟩

• Article dans une revue

On the use of ultrasounds to quantify the longitudinal threshold force to detach osteoblastic cells from a conditioned glass substrate

Dorothée Debavelaere-Callens, L. Peyre, Pierre Campistron, H.F. Hildebrand

Biomolecuar Engineering, 2007, 24, pp.521-525. ⟨10.1016/j.bioeng.2007.08.016⟩. ⟨hal-00285683⟩

• Article dans une revue

Calculation and measurement of the magnetostriction of multilayered composites

L. Garcia-Gancedo, S. Busbridge, Philippe Pernod, Vladimir Preobrazhensky, O. Ducloux

Journal of Magnetism and Magnetic Materials, 2007, 310, pp.2627-2629. ⟨10.1016/j.jmmm.2006.11.051⟩. ⟨hal-00285635⟩

• Article dans une revue

Comparison of structural and electrical properties of PMN-PT films deposited on Si with different bottom electrodes

M. Detalle, Gang Wang, Denis Remiens, P. Ruterana, P. Roussel, B. Dkhil

PMN-PT (70/30) thin films were deposited by sputtering on silicon substrate covered with different bottom electrodes: TiOx/Pt and LaNiO3 (LNO). The bilayers TiOx/Pt are deposited by sputtering and the LNO layer by sol–gel. Whatever the bottom electrodes the perovskite phase appears at 400 °C; the…

Journal of Crystal Growth, 2007, 305 (1), pp.137-143. ⟨10.1016/j.jcrysgro.2007.04.020⟩. ⟨hal-00176607⟩

• Article dans une revue

Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

A. Soltani, A. Ben Moussa, S. Touati, Virginie Hoel, Jean-Claude de Jaeger, J. Laureyns, Y. Cordier, C. Marhic, M. A. Djouadi, C. Dua

High quality ohmic contacts were realized in order to obtain an AlGaN/GaN high electron mobility transistor (HEMT) on different substrates (Si, Al2O3, SiC). A metallization scheme based on Ti/Al/Ni/Au was used. The ohmic contacts were obtained using an optimized rapid thermal annealing (RTA) at…

Diamond and Related Materials, 2007, 16, pp.262-266. ⟨10.1016/j.diamond.2006.06.022⟩. ⟨hal-00267124⟩

• Article dans une revue

Silicon-molecules-metal junctions by transfert printing : chemical synthesis and electrical properties

David Guérin, C. Merckling, S. Lenfant, X. Wallart, S. Pleutin, D. Vuillaume

Journal of Physical Chemistry C, 2007, 111, pp.7947-7956. ⟨10.1021/jp067846v⟩. ⟨hal-00255833⟩