Publications

• Communication dans un congrès

Pseudo-3d Modeling Of The Lamb Wave Field Generated By A Surface-Bonded, Finite-Sized Piezoelectric Transducer

Mustapha Baouahi, Jamal Assaad, Emmanuel Moulin, Sébastien Grondel

The aim of this work is to predict the acoustic field radiated in an isotropic plate by an integrated piezoelectric transducer. A "pseudo-3D" formulation has been developed in order to take into account the 3D aspects of the problem in a simple way. The basic principles of this model have…

2006 IEEE Ultrasonics Symposium, Oct 2006, Vancouver, Canada. pp.1177-1180, ⟨10.1109/ULTSYM.2006.302⟩. ⟨hal-04252939⟩

• Article dans une revue

Top Down' Approaches for the Study of Single-Cells: Micro-Engineering and Electrical Phenotype

Vincent Senez, Tahsin Akalin, S. Arscott, Nour Eddine Bourzgui, Bertrand Bocquet, Teruo Fujii, Erwan Lennon, Takahisa Yamamoto

Single-cell analysis is a very important field of research and is currently at the frontier of physical and biological sciences. Understanding how the phenotype of a single-cell arises from its genotype is a complex topic. Currently, the prevailing paradigm to analyze cellular functions is the…

Advances in Science and Technology, 2006, 53, pp.97-106. ⟨10.4028/www.scientific.net/AST.53.97⟩. ⟨hal-02347520⟩

• Article dans une revue

High pressure-resistant SU-8 microchannels for monolithic porous structure integration

Julien Carlier, Katarzyna Chuda, S. Arscott, V. Thomy, Bernard Verbeke, Xavier Coqueret, Jean Christophe Camart, Christian Druon, Pierre Tabourier

Integrated lab-on-chip (LOC) microsystems dedicated to proteomic analysis require specific pretreatment steps such as protein trypsic digestion, concentration, desalting or separation of biological samples. These steps can be achieved thanks to porous monolithic polymers. This paper deals with the…

Journal of Micromechanics and Microengineering, 2006, 16 (10), pp.2211-2219. ⟨10.1088/0960-1317/16/10/039⟩. ⟨hal-02347498⟩

• Communication dans un congrès

Dimensionnement automatique d'un circuit analogique à l'aide des transistors de référence

Ramy Iskander, Marie-Minerve Louërat, Andreas Kaiser

Cet article propose une méthode pour calculer les dimensions et la polarisation des transistors d’un circuit analogique CMOS en se fondant sur la connaissance du concepteur, sans avoir recours à un simulateur. Cette méthode suppose que le circuit est décrit comme une hiérarchie de modules et de…

TAISA Colloque sur le Traitement Analogique de l'Information du Signal et ses Applications, Oct 2006, Strasbourg, France. pp.89-92. ⟨hal-01338476⟩

• Article dans une revue

Prediction of the electromagnetic noise of an asynchronous machine using experimental designs

M. Hecquet, A. Ait-Hammouda, M. Goueygou, P. Brochet, A. Randria

Mathematics and Computers in Simulation, 2006, pp.499-509. ⟨10.1016/j.matcom.2006.02.026⟩. ⟨hal-00241158⟩

• Communication dans un congrès

Thermal characterization of HF power FETS

D. Pogany, J. Kuzmik, S. Bychikhin, E. Pichonat, Christophe Gaquière, K. Anderson, C. Fager, J. Würfl, M.A. Di Forte-Poisson

Target days, Oct 2006, Frascati, Italy. ⟨hal-00337243⟩

• Communication dans un congrès

Optimisation des éléments passifs d'un convertisseur sigma-delta temps continu

Laurent de Lamarre, Marie-Minerve Louërat, Andreas Kaiser

La valeur de la charge capacitive influe largement sur le coût et la consommation d’un convertisseur Σ∆. Dans cet article nous montrons comment calculer la valeur des éléments capacitifs à partir des spécifications de bruit. Une méthode de réduction de la charge capacitive totale du filtre de…

TAISA Colloque sur le Traitement Analogique de l'Information du Signal et ses Applications, Oct 2006, Strasbourg, France. pp.101-104. ⟨hal-01338452⟩

• Article dans une revue

Correlation between morphological, electrical and optical properties of GaN at all stages of MOVPE Si/N treatment growth

I. Halidou, Z. Benzarti, Z. Bougrioua, T. Boufaden, B. El Jani

GaN has been grown using Si/N treatment growth by MOVPE on sapphire (0001) in a home-made vertical reactor. The growth was monitored by in situ laser reflectometry. The morphological, electrical and optical properties of GaN are investigated at all the growth stages. To this aim, the growth was…

Superlattices and Microstructures, 2006, 40 (4-6), pp.490-495. ⟨10.1016/j.spmi.2006.09.018⟩. ⟨hal-02906714⟩

• Communication dans un congrès

Surface capping of AlInN/GaN HEMT structures

F Medjdoub, D. Ducatteau, Christophe Gaquière, J.-F Carlin, M Gonschorek, E Feltin, M A Py, N Grandjean, E Kohn

European Workshop on III-Nitride Semiconductor Materials and Devices, Sep 2006, Heraklion, Greece. ⟨hal-03281380⟩

• Article dans une revue

Determination of the d31 piezoelectric coefficient of PbZrxTi1−xO3 thin films using multilayer buckled micromembranes

C. Ayela, Liviu Nicu, Caroline Soyer, Eric Cattan, C. Bergaud

The aim of this paper consists in the determination of the piezoelectric transverse coefficient d31 of PbZrxTi1-xO3 (PZT) thin films integrated in dedicated multilayer silicon-based micromembranes exhibiting an initial buckled profile. An analytical model specific to this configuration was built…

Journal of Applied Physics, 2006, 100 (5), pp.054908. ⟨10.1063/1.2338139⟩. ⟨hal-02470523⟩